SE438221B - Forfarande for framstellning av ett epitaxiellt skikt av ett blykalkogenidt material, en halvledaranordning innefattande ett sadant skikt och anvendning av en sadan halvledaranordning i en fotocelldetektor - Google Patents

Forfarande for framstellning av ett epitaxiellt skikt av ett blykalkogenidt material, en halvledaranordning innefattande ett sadant skikt och anvendning av en sadan halvledaranordning i en fotocelldetektor

Info

Publication number
SE438221B
SE438221B SE7805652A SE7805652A SE438221B SE 438221 B SE438221 B SE 438221B SE 7805652 A SE7805652 A SE 7805652A SE 7805652 A SE7805652 A SE 7805652A SE 438221 B SE438221 B SE 438221B
Authority
SE
Sweden
Prior art keywords
chamber
substrate
temperature
lead
vapor
Prior art date
Application number
SE7805652A
Other languages
English (en)
Swedish (sv)
Other versions
SE7805652L (sv
Inventor
R B Schoolar
Original Assignee
Us Government
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Us Government filed Critical Us Government
Publication of SE7805652L publication Critical patent/SE7805652L/xx
Publication of SE438221B publication Critical patent/SE438221B/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/063—Gp II-IV-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Bipolar Transistors (AREA)
SE7805652A 1977-05-27 1978-05-17 Forfarande for framstellning av ett epitaxiellt skikt av ett blykalkogenidt material, en halvledaranordning innefattande ett sadant skikt och anvendning av en sadan halvledaranordning i en fotocelldetektor SE438221B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/801,431 US4154631A (en) 1977-05-27 1977-05-27 Equilibrium growth technique for preparing PbSx Se1-x epilayers

Publications (2)

Publication Number Publication Date
SE7805652L SE7805652L (sv) 1978-11-28
SE438221B true SE438221B (sv) 1985-04-01

Family

ID=25181074

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7805652A SE438221B (sv) 1977-05-27 1978-05-17 Forfarande for framstellning av ett epitaxiellt skikt av ett blykalkogenidt material, en halvledaranordning innefattande ett sadant skikt och anvendning av en sadan halvledaranordning i en fotocelldetektor

Country Status (10)

Country Link
US (1) US4154631A (de)
JP (1) JPS5416977A (de)
BE (1) BE867418A (de)
CA (1) CA1152620A (de)
DE (1) DE2822963A1 (de)
FR (1) FR2402476B1 (de)
GB (3) GB1604966A (de)
IT (1) IT1105039B (de)
NL (1) NL7805623A (de)
SE (1) SE438221B (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4315269A (en) * 1977-08-29 1982-02-09 Rca Corporation Thick protective overcoat layer for optical video disc
US4227948A (en) * 1977-12-27 1980-10-14 The United States Of America As Represented By The Secretary Of The Navy Growth technique for preparing graded gap semiconductors and devices
US4263604A (en) * 1977-12-27 1981-04-21 The United States Of America As Represented By The Secretary Of The Navy Graded gap semiconductor detector
US4371232A (en) * 1977-12-27 1983-02-01 The United States Of America As Represented By The Secretary Of The Navy Graded gap semiconductor optical device
US4330932A (en) * 1978-07-20 1982-05-25 The United States Of America As Represented By The Secretary Of The Navy Process for preparing isolated junctions in thin-film semiconductors utilizing shadow masked deposition to form graded-side mesas
JPS59156996A (ja) * 1983-02-23 1984-09-06 Koito Mfg Co Ltd 化合物結晶膜の製造方法とその装置
FR2557562A1 (fr) * 1983-12-29 1985-07-05 Menn Roger Procede de fabrication de couches non conductrices a variation de composition atomique
JPS60251195A (ja) * 1984-05-26 1985-12-11 Koito Mfg Co Ltd 化合物結晶膜の製造方法とその装置
US4743949A (en) * 1984-07-10 1988-05-10 Hans Zogg Infrared optical-electronic device
US4709655A (en) * 1985-12-03 1987-12-01 Varian Associates, Inc. Chemical vapor deposition apparatus
KR880010481A (ko) * 1987-02-21 1988-10-10 강진구 액상 박막 결정 성장방법 및 장치
KR910006093B1 (ko) * 1988-06-30 1991-08-12 삼성전자 주식회사 반도체 장치의 제조방법
US4853339A (en) * 1988-07-27 1989-08-01 The United States Of America As Represented By The Secretary Of The Navy Method of sensitizing Pb-salt epitaxial films for schottky diodes
US4900373A (en) * 1988-07-27 1990-02-13 The United States Of America As Represented By The Secretary Of The Navy Sensitization pretreatment of Pb-salt epitaxial films for schottky diodes by sulfur vapor exposure
US4870027A (en) * 1988-07-27 1989-09-26 The United States Of America As Represented By The Secretary Of The Navy Sensitization pretreatment of Pb-salt epitaxial films for Schottky diodes by sulfur vapor exposure
AU4695096A (en) * 1995-01-06 1996-07-24 National Aeronautics And Space Administration - Nasa Minority carrier device
JP2002270346A (ja) * 2001-03-09 2002-09-20 Mitsubishi Heavy Ind Ltd 加熱装置及びその製造方法並びに被膜形成装置
JP4509433B2 (ja) * 2001-07-12 2010-07-21 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US7442413B2 (en) * 2005-11-18 2008-10-28 Daystar Technologies, Inc. Methods and apparatus for treating a work piece with a vaporous element
EA200701428A1 (ru) * 2007-06-11 2008-02-28 Ариф Мирджалалович Пашаев СПОСОБ РЕГУЛИРОВАНИЯ КОНЦЕНТРАЦИИ НОСИТЕЛЕЙ ЗАРЯДА В ЭПИТАКСИАЛЬНЫХ СЛОЯХ PbSnSe
US8778081B2 (en) 2012-01-04 2014-07-15 Colorado State University Research Foundation Process and hardware for deposition of complex thin-film alloys over large areas
US10109754B2 (en) 2012-12-13 2018-10-23 The Board Of Regents Of The University Of Oklahoma Photovoltaic lead-salt detectors
WO2015047492A2 (en) * 2013-06-20 2015-04-02 The Board Of Regents Of The University Of Oklahoma Photovoltaic lead-salt detectors
US9887309B2 (en) 2012-12-13 2018-02-06 The Board of Regents of the University of Okalahoma Photovoltaic lead-salt semiconductor detectors

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1295195B (de) * 1961-12-26 1969-05-14 Minnesota Mining & Mfg Thermoelektrisches Halbleitermaterial
US3716424A (en) * 1970-04-02 1973-02-13 Us Navy Method of preparation of lead sulfide pn junction diodes
US3793070A (en) * 1971-06-01 1974-02-19 Us Navy Method of varying the carrier concentration of lead-tin sulfide epitaxial films
US3961998A (en) * 1975-04-09 1976-06-08 The United States Of America As Represented By The Secretary Of The Navy Vacuum deposition method for fabricating an epitaxial pbsnte rectifying metal semiconductor contact photodetector
US4063974A (en) * 1975-11-14 1977-12-20 Hughes Aircraft Company Planar reactive evaporation method for the deposition of compound semiconducting films

Also Published As

Publication number Publication date
IT1105039B (it) 1985-10-28
IT7849585A0 (it) 1978-05-29
NL7805623A (nl) 1978-11-29
SE7805652L (sv) 1978-11-28
US4154631A (en) 1979-05-15
GB1604967A (en) 1981-12-16
BE867418A (fr) 1978-09-18
DE2822963A1 (de) 1978-11-30
GB1604966A (en) 1981-12-16
FR2402476B1 (fr) 1985-03-01
GB1604965A (en) 1981-12-16
CA1152620A (en) 1983-08-23
FR2402476A1 (fr) 1979-04-06
JPS5416977A (en) 1979-02-07

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