SE431381B - Tvapoligt overstromsskydd - Google Patents
Tvapoligt overstromsskyddInfo
- Publication number
- SE431381B SE431381B SE8203432A SE8203432A SE431381B SE 431381 B SE431381 B SE 431381B SE 8203432 A SE8203432 A SE 8203432A SE 8203432 A SE8203432 A SE 8203432A SE 431381 B SE431381 B SE 431381B
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- thyristor
- base layer
- diode
- bulkhead
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910021339 platinum silicide Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
- H01L27/0694—Integrated circuits having a three-dimensional layout comprising components formed on opposite sides of a semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thyristors (AREA)
- Electronic Switches (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE8203432A SE431381B (sv) | 1982-06-03 | 1982-06-03 | Tvapoligt overstromsskydd |
| US06/497,326 US4509089A (en) | 1982-06-03 | 1983-05-23 | Two-pole overcurrent protection device |
| DE8383710030T DE3361213D1 (en) | 1982-06-03 | 1983-05-24 | Two-pole overcurrent protection |
| EP83710030A EP0096651B1 (fr) | 1982-06-03 | 1983-05-24 | Protection de surintensité bipolaire |
| JP58097029A JPS58219763A (ja) | 1982-06-03 | 1983-06-02 | 二端子過電流保護装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE8203432A SE431381B (sv) | 1982-06-03 | 1982-06-03 | Tvapoligt overstromsskydd |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE8203432L SE8203432L (sv) | 1983-12-04 |
| SE431381B true SE431381B (sv) | 1984-01-30 |
Family
ID=20346955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8203432A SE431381B (sv) | 1982-06-03 | 1982-06-03 | Tvapoligt overstromsskydd |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4509089A (fr) |
| EP (1) | EP0096651B1 (fr) |
| JP (1) | JPS58219763A (fr) |
| DE (1) | DE3361213D1 (fr) |
| SE (1) | SE431381B (fr) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3521079A1 (de) * | 1984-06-12 | 1985-12-12 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa | Rueckwaerts leitende vollsteuergate-thyristoranordnung |
| JPS624368A (ja) * | 1985-06-28 | 1987-01-10 | シ−メンス、アクチエンゲゼルシヤフト | サイリスタ |
| US4958250B1 (en) * | 1985-08-19 | 1996-06-04 | Edward J Kotski | Voltage isolation apparatus for service transformers |
| JPH0821713B2 (ja) * | 1987-02-26 | 1996-03-04 | 株式会社東芝 | 導電変調型ｍｏｓｆｅｔ |
| GB8713440D0 (en) * | 1987-06-09 | 1987-07-15 | Texas Instruments Ltd | Semiconductor device |
| EP0354435B1 (fr) * | 1988-08-12 | 1995-12-20 | Hitachi, Ltd. | Circuit d'attaque pour transistor à grille isolée; et son utilisation dans un circuit de commutation, dans un dispositif de commutation de courant, et dans un système à moteur à induction |
| EP0538507B1 (fr) * | 1991-10-22 | 1996-12-27 | Deutsche ITT Industries GmbH | Circuit de protection pour contacts de connexion de circuits intégrés monolithiques |
| FR2683947B1 (fr) * | 1991-11-18 | 1994-02-18 | Sgs Thomson Microelectronics Sa | Diode de protection monolithique basse tension a faible capacite. |
| GB9127476D0 (en) * | 1991-12-30 | 1992-02-19 | Texas Instruments Ltd | A semiconductor integrated circuit |
| FR2688941B1 (fr) * | 1992-03-20 | 1994-06-17 | Sgs Thomson Microelectronics | Interrupteur de tension alternative a declenchement sur une alternance determinee et conduction par periode. |
| US5436786A (en) * | 1992-12-21 | 1995-07-25 | Dairyland Electrical Industries, Inc. | Isolator surge protector for DC isolation and AC grounding of cathodically protected systems |
| US5479031A (en) * | 1993-09-10 | 1995-12-26 | Teccor Electronics, Inc. | Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value |
| CA2183176C (fr) * | 1995-08-18 | 2000-10-24 | Brian R. Pelly | Dispositif de blocage de courant continu grande puissance pour la mise a la terre de courant alternatif et de defaut |
| US5856904A (en) * | 1996-11-15 | 1999-01-05 | Dairyland Electrical Industries, Inc. | Voltage and current based control and triggering for isolator surge protector |
| JP4198251B2 (ja) | 1999-01-07 | 2008-12-17 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法 |
| US10193322B2 (en) | 2015-11-13 | 2019-01-29 | Silicon Power Corporation | Low-loss and fast acting solid-state breaker |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3263128A (en) * | 1962-07-23 | 1966-07-26 | Richard L White | Circuit breaker |
| JPS5115394B1 (fr) * | 1969-11-20 | 1976-05-17 | ||
| SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
| JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
| SE430450B (sv) * | 1979-04-03 | 1983-11-14 | Asea Ab | Tvapoligt overstromsskydd for inkoppling i en stromforande ledning |
-
1982
- 1982-06-03 SE SE8203432A patent/SE431381B/sv not_active IP Right Cessation
-
1983
- 1983-05-23 US US06/497,326 patent/US4509089A/en not_active Expired - Fee Related
- 1983-05-24 EP EP83710030A patent/EP0096651B1/fr not_active Expired
- 1983-05-24 DE DE8383710030T patent/DE3361213D1/de not_active Expired
- 1983-06-02 JP JP58097029A patent/JPS58219763A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0096651A1 (fr) | 1983-12-21 |
| SE8203432L (sv) | 1983-12-04 |
| US4509089A (en) | 1985-04-02 |
| EP0096651B1 (fr) | 1985-11-13 |
| JPS58219763A (ja) | 1983-12-21 |
| DE3361213D1 (en) | 1985-12-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
Ref document number: 8203432-3 Effective date: 19950110 Format of ref document f/p: F |
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| NUG | Patent has lapsed |
Ref document number: 8203432-3 Format of ref document f/p: F |