SE423654B - Elektriskt endringsbar minnesanordning - Google Patents

Elektriskt endringsbar minnesanordning

Info

Publication number
SE423654B
SE423654B SE7805554A SE7805554A SE423654B SE 423654 B SE423654 B SE 423654B SE 7805554 A SE7805554 A SE 7805554A SE 7805554 A SE7805554 A SE 7805554A SE 423654 B SE423654 B SE 423654B
Authority
SE
Sweden
Prior art keywords
memory device
layer
region
tellurium
memory
Prior art date
Application number
SE7805554A
Other languages
English (en)
Swedish (sv)
Other versions
SE7805554L (sv
Inventor
V A Bluhm
Original Assignee
Burroughs Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Burroughs Corp filed Critical Burroughs Corp
Publication of SE7805554L publication Critical patent/SE7805554L/xx
Publication of SE423654B publication Critical patent/SE423654B/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
SE7805554A 1977-05-31 1978-05-16 Elektriskt endringsbar minnesanordning SE423654B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/801,773 US4115872A (en) 1977-05-31 1977-05-31 Amorphous semiconductor memory device for employment in an electrically alterable read-only memory

Publications (2)

Publication Number Publication Date
SE7805554L SE7805554L (sv) 1978-12-01
SE423654B true SE423654B (sv) 1982-05-17

Family

ID=25182002

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7805554A SE423654B (sv) 1977-05-31 1978-05-16 Elektriskt endringsbar minnesanordning

Country Status (11)

Country Link
US (1) US4115872A (de)
JP (1) JPS53148933A (de)
BE (1) BE862625A (de)
BR (1) BR7803207A (de)
CA (1) CA1124857A (de)
DE (1) DE2822264C2 (de)
FR (1) FR2393398A1 (de)
GB (1) GB1599075A (de)
IT (1) IT1096139B (de)
NL (1) NL184186C (de)
SE (1) SE423654B (de)

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US4272562A (en) * 1979-06-19 1981-06-09 Harris Corporation Method of fabricating amorphous memory devices of reduced first fire threshold voltage
US4433342A (en) * 1981-04-06 1984-02-21 Harris Corporation Amorphous switching device with residual crystallization retardation
JPS57189393A (en) * 1981-05-18 1982-11-20 Seiko Epson Corp Semiconductor storage device
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DE3586450T2 (de) * 1984-02-21 1993-03-18 Environmental Res Inst Kapazitive vorrichtung.
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US5229326A (en) * 1992-06-23 1993-07-20 Micron Technology, Inc. Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
US5753947A (en) * 1995-01-20 1998-05-19 Micron Technology, Inc. Very high-density DRAM cell structure and method for fabricating it
US5879955A (en) 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US5789758A (en) * 1995-06-07 1998-08-04 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US5751012A (en) * 1995-06-07 1998-05-12 Micron Technology, Inc. Polysilicon pillar diode for use in a non-volatile memory cell
US5869843A (en) * 1995-06-07 1999-02-09 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cells thereof
US6420725B1 (en) 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
KR100253029B1 (ko) * 1995-06-07 2000-04-15 로데릭 더블류 루이스 불휘발성 메모리 셀내에서 다중 상태의 물질을 이용하는 스택·트랜치형 다이오드
US5831276A (en) 1995-06-07 1998-11-03 Micron Technology, Inc. Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
US5837564A (en) * 1995-11-01 1998-11-17 Micron Technology, Inc. Method for optimal crystallization to obtain high electrical performance from chalcogenides
US6653733B1 (en) 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
US6025220A (en) 1996-06-18 2000-02-15 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
US5814527A (en) * 1996-07-22 1998-09-29 Micron Technology, Inc. Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
US5985698A (en) * 1996-07-22 1999-11-16 Micron Technology, Inc. Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell
US5789277A (en) 1996-07-22 1998-08-04 Micron Technology, Inc. Method of making chalogenide memory device
US6337266B1 (en) 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US5812441A (en) * 1996-10-21 1998-09-22 Micron Technology, Inc. MOS diode for use in a non-volatile memory cell
US6015977A (en) * 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US5787042A (en) * 1997-03-18 1998-07-28 Micron Technology, Inc. Method and apparatus for reading out a programmable resistor memory
US5952671A (en) * 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
US6087689A (en) * 1997-06-16 2000-07-11 Micron Technology, Inc. Memory cell having a reduced active area and a memory array incorporating the same
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
US6440837B1 (en) 2000-07-14 2002-08-27 Micron Technology, Inc. Method of forming a contact structure in a semiconductor device
US6563156B2 (en) * 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same
US6734455B2 (en) * 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US6642102B2 (en) * 2001-06-30 2003-11-04 Intel Corporation Barrier material encapsulation of programmable material
US6881623B2 (en) * 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US6507061B1 (en) * 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory
US7319057B2 (en) * 2001-10-30 2008-01-15 Ovonyx, Inc. Phase change material memory device
US7151273B2 (en) * 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US6849868B2 (en) * 2002-03-14 2005-02-01 Micron Technology, Inc. Methods and apparatus for resistance variable material cells
US6825135B2 (en) * 2002-06-06 2004-11-30 Micron Technology, Inc. Elimination of dendrite formation during metal/chalcogenide glass deposition
TWI245288B (en) * 2003-03-20 2005-12-11 Sony Corp Semiconductor memory element and semiconductor memory device using the same
US20040251988A1 (en) * 2003-06-16 2004-12-16 Manish Sharma Adjustable phase change material resistor
US20040257848A1 (en) * 2003-06-18 2004-12-23 Macronix International Co., Ltd. Method for adjusting the threshold voltage of a memory cell
US7381611B2 (en) * 2003-08-04 2008-06-03 Intel Corporation Multilayered phase change memory
FR2861887B1 (fr) * 2003-11-04 2006-01-13 Commissariat Energie Atomique Element de memoire a changement de phase a cyclabilite amelioree
KR100733147B1 (ko) * 2004-02-25 2007-06-27 삼성전자주식회사 상변화 메모리 장치 및 그 제조 방법
US7411208B2 (en) * 2004-05-27 2008-08-12 Samsung Electronics Co., Ltd. Phase-change memory device having a barrier layer and manufacturing method
US20050263801A1 (en) * 2004-05-27 2005-12-01 Jae-Hyun Park Phase-change memory device having a barrier layer and manufacturing method
US7482616B2 (en) * 2004-05-27 2009-01-27 Samsung Electronics Co., Ltd. Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
DE102005025209B4 (de) * 2004-05-27 2011-01-13 Samsung Electronics Co., Ltd., Suwon Halbleiterspeicherbauelement, elektronisches System und Verfahren zur Herstellung eines Halbleiterspeicherbauelements
CN101044624A (zh) * 2004-10-22 2007-09-26 株式会社半导体能源研究所 半导体器件
JP4767653B2 (ja) * 2004-10-22 2011-09-07 株式会社半導体エネルギー研究所 半導体装置及び無線チップ
FR2880177B1 (fr) * 2004-12-23 2007-05-18 Commissariat Energie Atomique Memoire pmc ayant un temps de retention et une vitesse d'ecriture ameliores
US20060138467A1 (en) * 2004-12-29 2006-06-29 Hsiang-Lan Lung Method of forming a small contact in phase-change memory and a memory cell produced by the method
DE602005018744D1 (de) * 2005-04-08 2010-02-25 St Microelectronics Srl Lateraler Phasenwechselspeicher
US8653495B2 (en) * 2005-04-11 2014-02-18 Micron Technology, Inc. Heating phase change material
US7943921B2 (en) 2005-12-16 2011-05-17 Micron Technology, Inc. Phase change current density control structure
EP1850378A3 (de) * 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Speichervorrichtung und Halbleiterbauelement
FR2922368A1 (fr) * 2007-10-16 2009-04-17 Commissariat Energie Atomique Procede de fabrication d'une memoire cbram ayant une fiabilite amelioree
US8377741B2 (en) * 2008-12-30 2013-02-19 Stmicroelectronics S.R.L. Self-heating phase change memory cell architecture
US9954287B2 (en) 2014-11-20 2018-04-24 At&T Intellectual Property I, L.P. Apparatus for converting wireless signals and electromagnetic waves and methods thereof
KR102526621B1 (ko) * 2018-04-23 2023-04-28 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 이의 동작 방법

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US3886577A (en) * 1973-09-12 1975-05-27 Energy Conversion Devices Inc Filament-type memory semiconductor device and method of making the same
US3980505A (en) * 1973-09-12 1976-09-14 Buckley William D Process of making a filament-type memory semiconductor device
US3877049A (en) * 1973-11-28 1975-04-08 William D Buckley Electrodes for amorphous semiconductor switch devices and method of making the same

Also Published As

Publication number Publication date
NL184186B (nl) 1988-12-01
NL7804961A (nl) 1978-12-04
SE7805554L (sv) 1978-12-01
JPS53148933A (en) 1978-12-26
US4115872A (en) 1978-09-19
IT7823462A0 (it) 1978-05-16
FR2393398B1 (de) 1984-10-19
BR7803207A (pt) 1979-03-13
IT1096139B (it) 1985-08-17
NL184186C (nl) 1989-05-01
DE2822264A1 (de) 1978-12-14
BE862625A (fr) 1978-05-02
DE2822264C2 (de) 1985-10-24
FR2393398A1 (fr) 1978-12-29
JPS6331955B2 (de) 1988-06-27
GB1599075A (en) 1981-09-30
CA1124857A (en) 1982-06-01

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