SE419809B - Halvledarelement med skyddande ytbeleggning - Google Patents

Halvledarelement med skyddande ytbeleggning

Info

Publication number
SE419809B
SE419809B SE7614186A SE7614186A SE419809B SE 419809 B SE419809 B SE 419809B SE 7614186 A SE7614186 A SE 7614186A SE 7614186 A SE7614186 A SE 7614186A SE 419809 B SE419809 B SE 419809B
Authority
SE
Sweden
Prior art keywords
semiconductor element
protective coating
protective
coating
semiconductor
Prior art date
Application number
SE7614186A
Other languages
English (en)
Swedish (sv)
Other versions
SE7614186L (sv
Inventor
H F Windsor
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE7614186L publication Critical patent/SE7614186L/xx
Publication of SE419809B publication Critical patent/SE419809B/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H10W74/131
    • H10W74/137
    • H10W74/476
    • H10W72/01515
    • H10W72/075
    • H10W74/00
SE7614186A 1975-12-18 1976-12-16 Halvledarelement med skyddande ytbeleggning SE419809B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64217175A 1975-12-18 1975-12-18

Publications (2)

Publication Number Publication Date
SE7614186L SE7614186L (sv) 1977-06-19
SE419809B true SE419809B (sv) 1981-08-24

Family

ID=24575493

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7614186A SE419809B (sv) 1975-12-18 1976-12-16 Halvledarelement med skyddande ytbeleggning

Country Status (6)

Country Link
JP (1) JPS5276878A (Direct)
DE (1) DE2656963A1 (Direct)
FR (1) FR2335960A1 (Direct)
GB (1) GB1563421A (Direct)
NL (1) NL7613944A (Direct)
SE (1) SE419809B (Direct)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474677A (en) * 1977-11-28 1979-06-14 Hitachi Ltd Surface stabilizing method of semiconcuctor element using polyimide silicone
JPS56130947A (en) * 1980-03-17 1981-10-14 Fujitsu Ltd Manufacture of semiconductor device
JPS60137Y2 (ja) * 1980-05-20 1985-01-05 九州日立マクセル株式会社 電動式噴霧器
GB2126786B (en) * 1982-09-04 1986-04-03 Emi Ltd Ion sensitive field effect transistor encapsulation
KR950011927B1 (ko) * 1989-12-07 1995-10-12 가부시끼가이샤 도시바 감광성 조성물 및 수지봉지형 반도체장치
DE102019105727B4 (de) * 2019-03-07 2020-10-15 Semikron Elektronik Gmbh & Co. Kg Thyristor oder Diode

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1182353C2 (de) * 1961-03-29 1973-01-11 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelements, wie Halbleiterstromtor oder Flaechentransistor, mit einer hochohmigen n-Zone zwischen zwei p-Zonen im Halbleiter-koerper
US3325450A (en) * 1965-05-12 1967-06-13 Gen Electric Polysiloxaneimides and their production
GB1230421A (Direct) * 1967-09-15 1971-05-05
US3610870A (en) * 1968-03-13 1971-10-05 Hitachi Ltd Method for sealing a semiconductor element
US3615913A (en) * 1968-11-08 1971-10-26 Westinghouse Electric Corp Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating
US3628106A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with protective peripheral junction portion
US3597269A (en) * 1969-09-30 1971-08-03 Westinghouse Electric Corp Surfce stabilization of semiconductor power devices and article
US3598784A (en) * 1970-03-11 1971-08-10 Gen Electric Polysiloxane amides
IE35063B1 (en) * 1970-05-22 1975-10-29 Gen Electric Semiconductor device with polymeric passivant bonded preform
US3740305A (en) * 1971-10-01 1973-06-19 Gen Electric Composite materials bonded with siloxane containing polyimides
GB1553243A (en) * 1975-08-04 1979-09-26 Gen Electric Semiconductor
SE418433B (sv) * 1975-12-11 1981-05-25 Gen Electric Halvledarelement med ett skikt av ett polymert siloxan-innehallande membranmaterial med variabel permeabilitet anbringat pa utvalda ytomraden av elementet

Also Published As

Publication number Publication date
FR2335960A1 (fr) 1977-07-15
NL7613944A (nl) 1977-06-21
GB1563421A (en) 1980-03-26
SE7614186L (sv) 1977-06-19
DE2656963A1 (de) 1977-06-30
JPS5276878A (en) 1977-06-28
FR2335960B1 (Direct) 1982-07-30

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