SE422641B - Halvledarelement med diodfunktion - Google Patents

Halvledarelement med diodfunktion

Info

Publication number
SE422641B
SE422641B SE7707251A SE7707251A SE422641B SE 422641 B SE422641 B SE 422641B SE 7707251 A SE7707251 A SE 7707251A SE 7707251 A SE7707251 A SE 7707251A SE 422641 B SE422641 B SE 422641B
Authority
SE
Sweden
Prior art keywords
diodfunction
semiconductor element
semiconductor
Prior art date
Application number
SE7707251A
Other languages
English (en)
Other versions
SE7707251L (sv
Inventor
B Pacor
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Publication of SE7707251L publication Critical patent/SE7707251L/sv
Publication of SE422641B publication Critical patent/SE422641B/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/619—Combinations of lateral BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
SE7707251A 1976-06-25 1977-06-22 Halvledarelement med diodfunktion SE422641B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT24696/76A IT1063522B (it) 1976-06-25 1976-06-25 Diodo a semiconduttore con anello collettore per circuito integrato monolitico

Publications (2)

Publication Number Publication Date
SE7707251L SE7707251L (sv) 1977-12-26
SE422641B true SE422641B (sv) 1982-03-15

Family

ID=11214430

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7707251A SE422641B (sv) 1976-06-25 1977-06-22 Halvledarelement med diodfunktion

Country Status (7)

Country Link
JP (1) JPS5319772A (sv)
BR (1) BR7703967A (sv)
DE (1) DE2728083A1 (sv)
FR (1) FR2356274A1 (sv)
GB (1) GB1525557A (sv)
IT (1) IT1063522B (sv)
SE (1) SE422641B (sv)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4494134A (en) * 1982-07-01 1985-01-15 General Electric Company High voltage semiconductor devices comprising integral JFET
JPS61150383A (ja) * 1984-12-25 1986-07-09 Toshiba Corp 半導体装置
JPS6343455U (sv) * 1986-09-03 1988-03-23
DE9301093U1 (de) * 1993-01-27 1994-05-26 Ic - Haus Gmbh, 55294 Bodenheim Schaltungsanordnung zur Verringerung parasitärer Ströme an integrierten Strukturen, insbesondere Widerständen

Also Published As

Publication number Publication date
IT1063522B (it) 1985-02-11
GB1525557A (en) 1978-09-20
DE2728083A1 (de) 1978-01-12
FR2356274B1 (sv) 1982-02-26
JPS5319772A (en) 1978-02-23
BR7703967A (pt) 1978-05-16
FR2356274A1 (fr) 1978-01-20
SE7707251L (sv) 1977-12-26

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