SE418548B - Tyristor - Google Patents

Tyristor

Info

Publication number
SE418548B
SE418548B SE7706264A SE7706264A SE418548B SE 418548 B SE418548 B SE 418548B SE 7706264 A SE7706264 A SE 7706264A SE 7706264 A SE7706264 A SE 7706264A SE 418548 B SE418548 B SE 418548B
Authority
SE
Sweden
Prior art keywords
zone
zones
thyristor
highly doped
electrical contact
Prior art date
Application number
SE7706264A
Other languages
English (en)
Swedish (sv)
Other versions
SE7706264L (sv
Inventor
R Sittig
Bruyne P De
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Publication of SE7706264L publication Critical patent/SE7706264L/
Publication of SE418548B publication Critical patent/SE418548B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
SE7706264A 1976-06-02 1977-05-27 Tyristor SE418548B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH693076A CH594988A5 (id) 1976-06-02 1976-06-02

Publications (2)

Publication Number Publication Date
SE7706264L SE7706264L (sv) 1977-12-03
SE418548B true SE418548B (sv) 1981-06-09

Family

ID=4317272

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7706264A SE418548B (sv) 1976-06-02 1977-05-27 Tyristor

Country Status (4)

Country Link
CA (1) CA1096511A (id)
CH (1) CH594988A5 (id)
DE (1) DE2628792C2 (id)
SE (1) SE418548B (id)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH634442A5 (de) * 1978-11-15 1983-01-31 Bbc Brown Boveri & Cie Lichtzuendbarer thyristor.
DE3226624A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit
DE3226613A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE344386B (id) * 1968-04-17 1972-04-10 Hitachi Ltd
US3731162A (en) * 1969-09-25 1973-05-01 Tokyo Shibaura Electric Co Semiconductor switching device
CH567803A5 (id) * 1974-01-18 1975-10-15 Bbc Brown Boveri & Cie

Also Published As

Publication number Publication date
DE2628792A1 (de) 1977-12-15
CH594988A5 (id) 1978-01-31
SE7706264L (sv) 1977-12-03
CA1096511A (en) 1981-02-24
DE2628792C2 (de) 1986-05-22

Similar Documents

Publication Publication Date Title
SE7701884L (sv) Halvledaranordning med sekerhetskrets
SE7900337L (sv) Halvledaranordning
ATE119712T1 (de) Sperrschichtphotozelle mit p-i-n übergängen des heterogenen typs.
SE7507080L (sv) Halvledaranordning
DE3786076D1 (de) Halbleiterbauelement mit einer anodenseitigen p-zone und einer anliegenden schwach dotierten n-basiszone.
US3020412A (en) Semiconductor photocells
FR2431770A1 (fr) Photodiode avalanche a semi-conducteurs de structure heterogene
FR2404923A1 (fr) Transistor bipolaire
GB1529050A (en) Semiconductor device
SE418548B (sv) Tyristor
GB1311446A (en) Semiconductor devices
ES412026A1 (es) Perfeccionamientos en los componentes semiconductores.
JPS55150271A (en) Semiconductor device
JPS5734363A (en) Semiconductor device
SE7413032L (id)
ES8204887A1 (es) Un dispositivo laser semiconductor
JPS55148469A (en) Semiconductor rectifier diode
SU820559A1 (ru) Излучательный элемент с полевым управлением (и его вариант)
GB1465737A (en) Thyristors
JPS5591892A (en) Semiconductor laser light emission device
SU1398706A1 (ru) Фототиристор
JPS55153385A (en) Current squeezing type semiconductor device
JPS5669879A (en) Semiconductor luminous device with lens
KR910013587A (ko) 애벌란취 항복형 접합을 갖는 반도체 장치
FR2266308A1 (en) Semiconductor diode with improved forward characteristics - has diffusion produced pn-junction with one side impurities connection

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 7706264-4

Effective date: 19910123

Format of ref document f/p: F