SE412662B - Forfarande for tillverkning av en tunnskiktskondensator - Google Patents

Forfarande for tillverkning av en tunnskiktskondensator

Info

Publication number
SE412662B
SE412662B SE7602900A SE7602900A SE412662B SE 412662 B SE412662 B SE 412662B SE 7602900 A SE7602900 A SE 7602900A SE 7602900 A SE7602900 A SE 7602900A SE 412662 B SE412662 B SE 412662B
Authority
SE
Sweden
Prior art keywords
procedure
manufacturing
thin layer
layer capacitor
capacitor
Prior art date
Application number
SE7602900A
Other languages
English (en)
Swedish (sv)
Other versions
SE7602900L (sv
Inventor
W Anders
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE7602900L publication Critical patent/SE7602900L/xx
Publication of SE412662B publication Critical patent/SE412662B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
    • H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
SE7602900A 1975-03-27 1976-02-27 Forfarande for tillverkning av en tunnskiktskondensator SE412662B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2513858A DE2513858C3 (de) 1975-03-27 1975-03-27 Verfahren zur Herstellung eines Tantal-Dünnschichtkondensators

Publications (2)

Publication Number Publication Date
SE7602900L SE7602900L (sv) 1976-09-28
SE412662B true SE412662B (sv) 1980-03-10

Family

ID=5942662

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7602900A SE412662B (sv) 1975-03-27 1976-02-27 Forfarande for tillverkning av en tunnskiktskondensator

Country Status (12)

Country Link
US (1) US4058445A (fr)
JP (1) JPS51121172A (fr)
AT (1) AT363569B (fr)
BE (1) BE840072A (fr)
CH (1) CH604353A5 (fr)
DE (1) DE2513858C3 (fr)
DK (1) DK132676A (fr)
FR (1) FR2305839A1 (fr)
GB (1) GB1544506A (fr)
IT (1) IT1058510B (fr)
NL (1) NL7603137A (fr)
SE (1) SE412662B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654207A (en) * 1903-02-03 1997-08-05 Sharp Kabushiki Kaisha Method of making two-terminal nonlinear device and liquid crystal apparatus including the same
US4251326A (en) * 1978-12-28 1981-02-17 Western Electric Company, Inc. Fabricating an RC network utilizing alpha tantalum
US4410867A (en) * 1978-12-28 1983-10-18 Western Electric Company, Inc. Alpha tantalum thin film circuit device
DE3063506D1 (en) * 1979-08-31 1983-07-07 Fujitsu Ltd A tantalum thin film capacitor and process for producing the same
US4488340A (en) * 1981-02-27 1984-12-18 Illinois Tool Works Inc. Apparatus for making capacitive structures
US5221449A (en) * 1990-10-26 1993-06-22 International Business Machines Corporation Method of making Alpha-Ta thin films
WO1992007968A1 (fr) * 1990-10-26 1992-05-14 International Business Machines Corporation STRUCTURE ET PROCEDE PERMETTANT DE FORMER DES FILMS ALPHA-Ta EN COUCHES MINCES
US5316893A (en) * 1991-01-03 1994-05-31 Lueder Ernst Method of producing electronic switching element
US5414588A (en) * 1993-09-20 1995-05-09 The Regents Of The University Of California High performance capacitors using nano-structure multilayer materials fabrication
US6447838B1 (en) * 1993-12-10 2002-09-10 Symetrix Corporation Integrated circuit capacitors with barrier layer and process for making the same
JP3929513B2 (ja) * 1995-07-07 2007-06-13 ローム株式会社 誘電体キャパシタおよびその製造方法
US5872696A (en) * 1997-04-09 1999-02-16 Fujitsu Limited Sputtered and anodized capacitors capable of withstanding exposure to high temperatures
US6395148B1 (en) 1998-11-06 2002-05-28 Lexmark International, Inc. Method for producing desired tantalum phase
US7335552B2 (en) * 2002-05-15 2008-02-26 Raytheon Company Electrode for thin film capacitor devices
US8407871B2 (en) * 2009-07-06 2013-04-02 Delphi Technologies, Inc. Method of manufacturing a shapeable short-resistant capacitor
US8665059B2 (en) 2011-11-18 2014-03-04 Avx Corporation High frequency resistor
CN104988358A (zh) * 2015-07-22 2015-10-21 宁波工程学院 一种薄膜电阻材料及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275915A (en) * 1966-09-27 Beta tantalum thin-film capacitors
US3274025A (en) * 1963-12-13 1966-09-20 Corning Glass Works Method of forming an electrical capacitor
IL26086A (en) * 1965-08-17 1970-07-19 Western Electric Co Thin-film capacitors using beta tantalum oxide and method for their production
US3544434A (en) * 1968-10-29 1970-12-01 Ronald R Giller Thick film capactors for miniaturized circuitry
US3607679A (en) * 1969-05-05 1971-09-21 Bell Telephone Labor Inc Method for the fabrication of discrete rc structure
US3664931A (en) * 1970-07-27 1972-05-23 Dieter Gerstenberg Method for fabrication of thin film capacitor
US3718565A (en) * 1970-11-27 1973-02-27 Bell Telephone Labor Inc Technique for the fabrication of discrete rc structure
BE791139A (fr) * 1972-01-14 1973-03-01 Western Electric Co Procede pour le depot de beta-tantale dope par l'azote

Also Published As

Publication number Publication date
AT363569B (de) 1981-08-10
CH604353A5 (fr) 1978-09-15
DE2513858C3 (de) 1981-08-06
DK132676A (da) 1976-09-28
US4058445A (en) 1977-11-15
NL7603137A (nl) 1976-09-29
DE2513858A1 (de) 1976-09-30
IT1058510B (it) 1982-05-10
ATA59676A (de) 1981-01-15
BE840072A (fr) 1976-09-27
SE7602900L (sv) 1976-09-28
DE2513858B2 (de) 1980-09-25
GB1544506A (en) 1979-04-19
FR2305839B1 (fr) 1981-02-13
JPS51121172A (en) 1976-10-22
FR2305839A1 (fr) 1976-10-22

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