SE407492B - Felteffekttransistor med isolerat styre och forfarande for dess tillverkning - Google Patents

Felteffekttransistor med isolerat styre och forfarande for dess tillverkning

Info

Publication number
SE407492B
SE407492B SE7510120A SE7510120A SE407492B SE 407492 B SE407492 B SE 407492B SE 7510120 A SE7510120 A SE 7510120A SE 7510120 A SE7510120 A SE 7510120A SE 407492 B SE407492 B SE 407492B
Authority
SE
Sweden
Prior art keywords
procedure
manufacture
power transistor
field power
insulated control
Prior art date
Application number
SE7510120A
Other languages
English (en)
Swedish (sv)
Other versions
SE7510120L (sv
Inventor
A C Ipri
J C Sarace
J H Scott
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7510120L publication Critical patent/SE7510120L/xx
Publication of SE407492B publication Critical patent/SE407492B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
SE7510120A 1974-09-12 1975-09-11 Felteffekttransistor med isolerat styre och forfarande for dess tillverkning SE407492B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/505,584 US3974515A (en) 1974-09-12 1974-09-12 IGFET on an insulating substrate

Publications (2)

Publication Number Publication Date
SE7510120L SE7510120L (sv) 1976-03-15
SE407492B true SE407492B (sv) 1979-03-26

Family

ID=24010936

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7510120A SE407492B (sv) 1974-09-12 1975-09-11 Felteffekttransistor med isolerat styre och forfarande for dess tillverkning

Country Status (8)

Country Link
US (1) US3974515A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5160173A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH600576A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2539073B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2284988A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1479117A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1044369B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE407492B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5268382A (en) * 1975-12-05 1977-06-07 Hitachi Ltd Semiconductor circuit unit
US4097314A (en) * 1976-12-30 1978-06-27 Rca Corp. Method of making a sapphire gate transistor
US4070211A (en) * 1977-04-04 1978-01-24 The United States Of America As Represented By The Secretary Of The Navy Technique for threshold control over edges of devices on silicon-on-sapphire
JPS5565472A (en) * 1978-11-13 1980-05-16 Fujitsu Ltd Integrated circuit device
US4279069A (en) * 1979-02-21 1981-07-21 Rockwell International Corporation Fabrication of a nonvolatile memory array device
JPS55128884A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Semiconductor photodetector
DE3028718C2 (de) * 1979-07-31 1982-08-19 Sharp K.K., Osaka Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung
US4368085A (en) 1979-10-15 1983-01-11 Rockwell International Corporation SOS island edge passivation structure
US4242156A (en) * 1979-10-15 1980-12-30 Rockwell International Corporation Method of fabricating an SOS island edge passivation structure
US4423432A (en) * 1980-01-28 1983-12-27 Rca Corporation Apparatus for decoding multiple input lines
US4589008A (en) * 1980-01-28 1986-05-13 Rca Corporation Apparatus for electrically joining the ends of substantially parallel semiconductor lines
GB2118774B (en) * 1982-02-25 1985-11-27 Sharp Kk Insulated gate thin film transistor
US4649627A (en) * 1984-06-28 1987-03-17 International Business Machines Corporation Method of fabricating silicon-on-insulator transistors with a shared element
US4751554A (en) * 1985-09-27 1988-06-14 Rca Corporation Silicon-on-sapphire integrated circuit and method of making the same
US4758529A (en) * 1985-10-31 1988-07-19 Rca Corporation Method of forming an improved gate dielectric for a MOSFET on an insulating substrate
US4735917A (en) * 1986-04-28 1988-04-05 General Electric Company Silicon-on-sapphire integrated circuits
US4722912A (en) * 1986-04-28 1988-02-02 Rca Corporation Method of forming a semiconductor structure
JPS62265756A (ja) * 1986-05-14 1987-11-18 Oki Electric Ind Co Ltd 薄膜トランジスタマトリクス
US4755481A (en) * 1986-05-15 1988-07-05 General Electric Company Method of making a silicon-on-insulator transistor
US5322807A (en) * 1992-08-19 1994-06-21 At&T Bell Laboratories Method of making thin film transistors including recrystallization and high pressure oxidation
US5362661A (en) * 1992-11-20 1994-11-08 Gold Star Co., Ltd. Method for fabricating thin film transistor
US7465679B1 (en) * 1993-02-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device
JP3171764B2 (ja) * 1994-12-19 2001-06-04 シャープ株式会社 半導体装置の製造方法
JP3545583B2 (ja) * 1996-12-26 2004-07-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6040618A (en) 1997-03-06 2000-03-21 Micron Technology, Inc. Multi-chip module employing a carrier substrate with micromachined alignment structures and method of forming
KR101009646B1 (ko) * 2007-08-01 2011-01-19 삼성모바일디스플레이주식회사 박막 트랜지스터 및 이를 구비한 표시 장치
US9601638B2 (en) * 2011-10-19 2017-03-21 Nxp Usa, Inc. GaN-on-Si switch devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE632998A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1962-05-31
JPS5047580A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-08-28 1975-04-28
US3890632A (en) * 1973-12-03 1975-06-17 Rca Corp Stabilized semiconductor devices and method of making same

Also Published As

Publication number Publication date
GB1479117A (en) 1977-07-06
AU8463475A (en) 1977-03-17
US3974515A (en) 1976-08-10
SE7510120L (sv) 1976-03-15
IT1044369B (it) 1980-03-20
FR2284988B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-04-16
CH600576A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-06-15
DE2539073A1 (de) 1976-03-25
JPS5160173A (en) 1976-05-25
FR2284988A1 (fr) 1976-04-09
DE2539073B2 (de) 1978-08-10

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