SE389764B - Forfarande for tillverkning av en laddningsforskjutningsanordning i tvafasteknik - Google Patents

Forfarande for tillverkning av en laddningsforskjutningsanordning i tvafasteknik

Info

Publication number
SE389764B
SE389764B SE7410187A SE7410187A SE389764B SE 389764 B SE389764 B SE 389764B SE 7410187 A SE7410187 A SE 7410187A SE 7410187 A SE7410187 A SE 7410187A SE 389764 B SE389764 B SE 389764B
Authority
SE
Sweden
Prior art keywords
procedure
manufacture
shift device
charge shift
fashion
Prior art date
Application number
SE7410187A
Other languages
English (en)
Other versions
SE7410187L (sv
Inventor
K Goser
K-U Stein
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732341179 external-priority patent/DE2341179C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE7410187L publication Critical patent/SE7410187L/xx
Publication of SE389764B publication Critical patent/SE389764B/sv

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866Surface Channel CCD
    • H01L29/76875Two-Phase CCD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/025Deposition multi-step
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/106Masks, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/143Shadow masking

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
SE7410187A 1973-08-14 1974-08-08 Forfarande for tillverkning av en laddningsforskjutningsanordning i tvafasteknik SE389764B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732341179 DE2341179C3 (de) 1973-08-14 Verfahren zur Herstellung einer Zweiphasen-Ladungsverschiebeanordnung und Verwendung von Materialien bei diesem Verfahren

Publications (2)

Publication Number Publication Date
SE7410187L SE7410187L (sv) 1975-02-17
SE389764B true SE389764B (sv) 1976-11-15

Family

ID=5889768

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7410187A SE389764B (sv) 1973-08-14 1974-08-08 Forfarande for tillverkning av en laddningsforskjutningsanordning i tvafasteknik

Country Status (14)

Country Link
US (1) US3914857A (sv)
JP (1) JPS5046488A (sv)
AT (1) AT337781B (sv)
BE (1) BE818752A (sv)
CA (1) CA1012659A (sv)
CH (1) CH575174A5 (sv)
DK (1) DK139118C (sv)
FR (1) FR2246068B1 (sv)
GB (1) GB1464755A (sv)
IE (1) IE39611B1 (sv)
IT (1) IT1019907B (sv)
LU (1) LU70713A1 (sv)
NL (1) NL7410685A (sv)
SE (1) SE389764B (sv)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167017A (en) * 1976-06-01 1979-09-04 Texas Instruments Incorporated CCD structures with surface potential asymmetry beneath the phase electrodes
US4087832A (en) * 1976-07-02 1978-05-02 International Business Machines Corporation Two-phase charge coupled device structure
US4232439A (en) * 1976-11-30 1980-11-11 Vlsi Technology Research Association Masking technique usable in manufacturing semiconductor devices
JPS52109879A (en) * 1977-01-28 1977-09-14 Agency Of Ind Science & Technol Formating method of matching domain
JPS5911988B2 (ja) * 1980-01-23 1984-03-19 株式会社日立製作所 イオン打込み方法
US4542577A (en) * 1982-12-30 1985-09-24 International Business Machines Corporation Submicron conductor manufacturing
US4576884A (en) * 1984-06-14 1986-03-18 Microelectronics Center Of North Carolina Method and apparatus for exposing photoresist by using an electron beam and controlling its voltage and charge
JPH0834194B2 (ja) * 1989-06-30 1996-03-29 松下電器産業株式会社 イオン注入方法及び本方法を用いた半導体装置の製造方法
JP2970158B2 (ja) * 1991-12-20 1999-11-02 日本電気株式会社 固体撮像装置の製造方法
KR940010932B1 (ko) * 1991-12-23 1994-11-19 금성일렉트론주식회사 Ccd영상소자 제조방법
JP2842066B2 (ja) * 1992-08-03 1998-12-24 日本電気株式会社 固体撮像装置及びその製造方法
US5409848A (en) * 1994-03-31 1995-04-25 Vlsi Technology, Inc. Angled lateral pocket implants on p-type semiconductor devices
EP0693773B1 (en) * 1994-07-14 2005-02-09 STMicroelectronics S.r.l. VDMOS power device and manufacturing process thereof
JP2965061B2 (ja) * 1996-04-19 1999-10-18 日本電気株式会社 電荷結合素子およびその製造方法
IT1289525B1 (it) * 1996-12-24 1998-10-15 Sgs Thomson Microelectronics Cella di memoria per dispositivi di tipo eeprom e relativo processo di fabbricazione
IT1289524B1 (it) 1996-12-24 1998-10-15 Sgs Thomson Microelectronics Cella di memoria per dispositivi di tipo eeprom e relativo processo di fabbricazione
US5896314A (en) * 1997-03-05 1999-04-20 Macronix International Co., Ltd. Asymmetric flash EEPROM with a pocket to focus electron injection and a manufacturing method therefor
US5943576A (en) * 1998-09-01 1999-08-24 National Semiconductor Corporation Angled implant to build MOS transistors in contact holes
US6331873B1 (en) * 1998-12-03 2001-12-18 Massachusetts Institute Of Technology High-precision blooming control structure formation for an image sensor
JP2001308304A (ja) * 2000-04-19 2001-11-02 Sony Corp 固体撮像素子の製造方法
US6828202B1 (en) * 2002-10-01 2004-12-07 T-Ram, Inc. Semiconductor region self-aligned with ion implant shadowing
JP2005093866A (ja) * 2003-09-19 2005-04-07 Fuji Film Microdevices Co Ltd 固体撮像素子の製造方法
JP7192723B2 (ja) * 2019-09-12 2022-12-20 株式会社ダイフク 物品搬送設備

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2875505A (en) * 1952-12-11 1959-03-03 Bell Telephone Labor Inc Semiconductor translating device
US3387360A (en) * 1965-04-01 1968-06-11 Sony Corp Method of making a semiconductor device
FR2123592A5 (sv) * 1971-01-14 1972-09-15 Commissariat Energie Atomique
US3851379A (en) * 1973-05-16 1974-12-03 Westinghouse Electric Corp Solid state components

Also Published As

Publication number Publication date
IE39611B1 (en) 1978-11-22
LU70713A1 (sv) 1974-12-10
US3914857A (en) 1975-10-28
IE39611L (en) 1975-02-14
DK139118B (da) 1978-12-18
ATA631574A (de) 1976-11-15
AT337781B (de) 1977-07-25
CH575174A5 (sv) 1976-04-30
FR2246068B1 (sv) 1978-01-27
DE2341179B2 (de) 1975-06-26
GB1464755A (en) 1977-02-16
SE7410187L (sv) 1975-02-17
DK139118C (da) 1979-05-28
DE2341179A1 (de) 1975-03-20
BE818752A (fr) 1974-12-02
IT1019907B (it) 1977-11-30
JPS5046488A (sv) 1975-04-25
CA1012659A (en) 1977-06-21
FR2246068A1 (sv) 1975-04-25
DK431074A (sv) 1975-04-14
NL7410685A (nl) 1975-02-18

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