ATA631574A - Verfahren zur herstellung einer ladungsverschiebeanordnung in zweiphasen-technik mittels schrager ionenimplantation - Google Patents
Verfahren zur herstellung einer ladungsverschiebeanordnung in zweiphasen-technik mittels schrager ionenimplantationInfo
- Publication number
- ATA631574A ATA631574A AT631574A AT631574A ATA631574A AT A631574 A ATA631574 A AT A631574A AT 631574 A AT631574 A AT 631574A AT 631574 A AT631574 A AT 631574A AT A631574 A ATA631574 A AT A631574A
- Authority
- AT
- Austria
- Prior art keywords
- manufacturing
- ion implantation
- phase technology
- angle ion
- shifting arrangement
- Prior art date
Links
- 238000005468 ion implantation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76875—Two-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/025—Deposition multi-step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/143—Shadow masking
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732341179 DE2341179C3 (de) | 1973-08-14 | Verfahren zur Herstellung einer Zweiphasen-Ladungsverschiebeanordnung und Verwendung von Materialien bei diesem Verfahren |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ATA631574A true ATA631574A (de) | 1976-11-15 |
| AT337781B AT337781B (de) | 1977-07-25 |
Family
ID=5889768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT631574A AT337781B (de) | 1973-08-14 | 1974-08-01 | Verfahren zur herstellung einer ladungsverschiebeanordnung in zweiphasen-technik mittels schrager ionenimplantation |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US3914857A (de) |
| JP (1) | JPS5046488A (de) |
| AT (1) | AT337781B (de) |
| BE (1) | BE818752A (de) |
| CA (1) | CA1012659A (de) |
| CH (1) | CH575174A5 (de) |
| DK (1) | DK139118C (de) |
| FR (1) | FR2246068B1 (de) |
| GB (1) | GB1464755A (de) |
| IE (1) | IE39611B1 (de) |
| IT (1) | IT1019907B (de) |
| LU (1) | LU70713A1 (de) |
| NL (1) | NL7410685A (de) |
| SE (1) | SE389764B (de) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4167017A (en) * | 1976-06-01 | 1979-09-04 | Texas Instruments Incorporated | CCD structures with surface potential asymmetry beneath the phase electrodes |
| US4087832A (en) * | 1976-07-02 | 1978-05-02 | International Business Machines Corporation | Two-phase charge coupled device structure |
| US4232439A (en) * | 1976-11-30 | 1980-11-11 | Vlsi Technology Research Association | Masking technique usable in manufacturing semiconductor devices |
| JPS52109879A (en) * | 1977-01-28 | 1977-09-14 | Agency Of Ind Science & Technol | Formating method of matching domain |
| JPS5911988B2 (ja) * | 1980-01-23 | 1984-03-19 | 株式会社日立製作所 | イオン打込み方法 |
| US4542577A (en) * | 1982-12-30 | 1985-09-24 | International Business Machines Corporation | Submicron conductor manufacturing |
| US4576884A (en) * | 1984-06-14 | 1986-03-18 | Microelectronics Center Of North Carolina | Method and apparatus for exposing photoresist by using an electron beam and controlling its voltage and charge |
| JPH0834194B2 (ja) * | 1989-06-30 | 1996-03-29 | 松下電器産業株式会社 | イオン注入方法及び本方法を用いた半導体装置の製造方法 |
| JP2970158B2 (ja) * | 1991-12-20 | 1999-11-02 | 日本電気株式会社 | 固体撮像装置の製造方法 |
| KR940010932B1 (ko) * | 1991-12-23 | 1994-11-19 | 금성일렉트론주식회사 | Ccd영상소자 제조방법 |
| JP2842066B2 (ja) * | 1992-08-03 | 1998-12-24 | 日本電気株式会社 | 固体撮像装置及びその製造方法 |
| US5409848A (en) * | 1994-03-31 | 1995-04-25 | Vlsi Technology, Inc. | Angled lateral pocket implants on p-type semiconductor devices |
| DE69434268T2 (de) * | 1994-07-14 | 2006-01-12 | Stmicroelectronics S.R.L., Agrate Brianza | Intergrierte Struktur einer Hochgeschwindigkeits-MOS-Technologe-Leistungsvorrichtung und zugehöriges Herstellungsverfahren |
| JP2965061B2 (ja) * | 1996-04-19 | 1999-10-18 | 日本電気株式会社 | 電荷結合素子およびその製造方法 |
| IT1289525B1 (it) * | 1996-12-24 | 1998-10-15 | Sgs Thomson Microelectronics | Cella di memoria per dispositivi di tipo eeprom e relativo processo di fabbricazione |
| IT1289524B1 (it) * | 1996-12-24 | 1998-10-15 | Sgs Thomson Microelectronics | Cella di memoria per dispositivi di tipo eeprom e relativo processo di fabbricazione |
| US5896314A (en) * | 1997-03-05 | 1999-04-20 | Macronix International Co., Ltd. | Asymmetric flash EEPROM with a pocket to focus electron injection and a manufacturing method therefor |
| US5943576A (en) | 1998-09-01 | 1999-08-24 | National Semiconductor Corporation | Angled implant to build MOS transistors in contact holes |
| US6331873B1 (en) | 1998-12-03 | 2001-12-18 | Massachusetts Institute Of Technology | High-precision blooming control structure formation for an image sensor |
| JP2001308304A (ja) * | 2000-04-19 | 2001-11-02 | Sony Corp | 固体撮像素子の製造方法 |
| US6828202B1 (en) * | 2002-10-01 | 2004-12-07 | T-Ram, Inc. | Semiconductor region self-aligned with ion implant shadowing |
| JP2005093866A (ja) * | 2003-09-19 | 2005-04-07 | Fuji Film Microdevices Co Ltd | 固体撮像素子の製造方法 |
| JP7192723B2 (ja) * | 2019-09-12 | 2022-12-20 | 株式会社ダイフク | 物品搬送設備 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2875505A (en) * | 1952-12-11 | 1959-03-03 | Bell Telephone Labor Inc | Semiconductor translating device |
| US3387360A (en) * | 1965-04-01 | 1968-06-11 | Sony Corp | Method of making a semiconductor device |
| FR2123592A5 (de) * | 1971-01-14 | 1972-09-15 | Commissariat Energie Atomique | |
| US3851379A (en) * | 1973-05-16 | 1974-12-03 | Westinghouse Electric Corp | Solid state components |
-
1974
- 1974-07-15 IE IE1489/74A patent/IE39611B1/xx unknown
- 1974-07-19 GB GB3200374A patent/GB1464755A/en not_active Expired
- 1974-07-25 CH CH1025274A patent/CH575174A5/xx not_active IP Right Cessation
- 1974-08-01 FR FR7426754A patent/FR2246068B1/fr not_active Expired
- 1974-08-01 AT AT631574A patent/AT337781B/de not_active IP Right Cessation
- 1974-08-05 US US494708A patent/US3914857A/en not_active Expired - Lifetime
- 1974-08-08 NL NL7410685A patent/NL7410685A/xx not_active Application Discontinuation
- 1974-08-08 SE SE7410187A patent/SE389764B/xx unknown
- 1974-08-12 BE BE147523A patent/BE818752A/xx unknown
- 1974-08-12 LU LU70713A patent/LU70713A1/xx unknown
- 1974-08-13 JP JP49092706A patent/JPS5046488A/ja active Pending
- 1974-08-13 CA CA206,898A patent/CA1012659A/en not_active Expired
- 1974-08-13 IT IT26270/74A patent/IT1019907B/it active
- 1974-08-13 DK DK431074A patent/DK139118C/da active
Also Published As
| Publication number | Publication date |
|---|---|
| GB1464755A (en) | 1977-02-16 |
| BE818752A (fr) | 1974-12-02 |
| SE389764B (sv) | 1976-11-15 |
| IE39611B1 (en) | 1978-11-22 |
| LU70713A1 (de) | 1974-12-10 |
| US3914857A (en) | 1975-10-28 |
| DE2341179B2 (de) | 1975-06-26 |
| IE39611L (en) | 1975-02-14 |
| DK139118B (da) | 1978-12-18 |
| CH575174A5 (de) | 1976-04-30 |
| JPS5046488A (de) | 1975-04-25 |
| SE7410187L (de) | 1975-02-17 |
| IT1019907B (it) | 1977-11-30 |
| DK139118C (da) | 1979-05-28 |
| FR2246068A1 (de) | 1975-04-25 |
| DK431074A (de) | 1975-04-14 |
| FR2246068B1 (de) | 1978-01-27 |
| CA1012659A (en) | 1977-06-21 |
| NL7410685A (nl) | 1975-02-18 |
| DE2341179A1 (de) | 1975-03-20 |
| AT337781B (de) | 1977-07-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |