SE385547B - Sett att framstella en halvledarkropp enligt krav 1 i svenska patentet 367 893 innefattande successivt, odlade epitaxiala omraden pa en halvledaryta - Google Patents

Sett att framstella en halvledarkropp enligt krav 1 i svenska patentet 367 893 innefattande successivt, odlade epitaxiala omraden pa en halvledaryta

Info

Publication number
SE385547B
SE385547B SE7203250A SE325072A SE385547B SE 385547 B SE385547 B SE 385547B SE 7203250 A SE7203250 A SE 7203250A SE 325072 A SE325072 A SE 325072A SE 385547 B SE385547 B SE 385547B
Authority
SE
Sweden
Prior art keywords
cultivated
manufacturing
body according
semiconductor area
swedish patent
Prior art date
Application number
SE7203250A
Other languages
English (en)
Swedish (sv)
Inventor
A Y Cho
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE385547B publication Critical patent/SE385547B/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02395Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02576N-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02579P-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/002Amphoteric doping
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/018Compensation doping
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/02Contacts, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/065Gp III-V generic compounds-processing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/072Heterojunctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/169Vacuum deposition, e.g. including molecular beam epitaxy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00Compositions
    • Y10S252/95Doping agent source material
    • Y10S252/951Doping agent source material for vapor transport
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/915Amphoteric doping
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/925Fluid growth doping control, e.g. delta doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
SE7203250A 1971-03-25 1972-03-14 Sett att framstella en halvledarkropp enligt krav 1 i svenska patentet 367 893 innefattande successivt, odlade epitaxiala omraden pa en halvledaryta SE385547B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12792671A 1971-03-25 1971-03-25

Publications (1)

Publication Number Publication Date
SE385547B true SE385547B (sv) 1976-07-12

Family

ID=22432666

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7203250A SE385547B (sv) 1971-03-25 1972-03-14 Sett att framstella en halvledarkropp enligt krav 1 i svenska patentet 367 893 innefattande successivt, odlade epitaxiala omraden pa en halvledaryta

Country Status (10)

Country Link
US (1) US3751310A (de)
JP (1) JPS5443351B1 (de)
BE (1) BE781053A (de)
CA (1) CA925629A (de)
DE (1) DE2214404C3 (de)
FR (1) FR2130697B1 (de)
GB (1) GB1381809A (de)
IT (1) IT954542B (de)
NL (1) NL7203890A (de)
SE (1) SE385547B (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961103A (en) * 1972-07-12 1976-06-01 Space Sciences, Inc. Film deposition
US3912826A (en) * 1972-08-21 1975-10-14 Airco Inc Method of physical vapor deposition
US3865625A (en) * 1972-10-13 1975-02-11 Bell Telephone Labor Inc Molecular beam epitaxy shadowing technique for fabricating dielectric optical waveguides
US3839084A (en) * 1972-11-29 1974-10-01 Bell Telephone Labor Inc Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds
US3915764A (en) * 1973-05-18 1975-10-28 Westinghouse Electric Corp Sputtering method for growth of thin uniform layers of epitaxial semiconductive materials doped with impurities
US3915765A (en) * 1973-06-25 1975-10-28 Bell Telephone Labor Inc MBE technique for fabricating semiconductor devices having low series resistance
US3899407A (en) * 1973-08-01 1975-08-12 Multi State Devices Ltd Method of producing thin film devices of doped vanadium oxide material
FR2265872B1 (de) * 1974-03-27 1977-10-14 Anvar
GB1515571A (en) * 1974-05-23 1978-06-28 Matsushita Electric Ind Co Ltd Methods of growing thin epitaxial films on a crystal substrate
US3969164A (en) * 1974-09-16 1976-07-13 Bell Telephone Laboratories, Incorporated Native oxide technique for preparing clean substrate surfaces
GB1528192A (en) * 1975-03-10 1978-10-11 Secr Defence Surface treatment of iii-v compound crystals
US3941624A (en) * 1975-03-28 1976-03-02 Bell Telephone Laboratories, Incorporated Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecular beam epitaxy
US4126930A (en) * 1975-06-19 1978-11-28 Varian Associates, Inc. Magnesium doping of AlGaAs
DE2631881C2 (de) * 1975-07-18 1982-11-25 Futaba Denshi Kogyo K.K., Mobara, Chiba Verfahren zur Herstellung eines Halbleiterbauelementes
US4171234A (en) * 1976-07-20 1979-10-16 Matsushita Electric Industrial Co., Ltd. Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles
JPS5399762A (en) * 1977-02-12 1978-08-31 Futaba Denshi Kogyo Kk Device for producing compound semiconductor film
JPS53110973A (en) * 1977-03-10 1978-09-28 Futaba Denshi Kogyo Kk Method and apparatus for manufacturing compounds
JPS53123659A (en) * 1977-04-05 1978-10-28 Futaba Denshi Kogyo Kk Method of producing compound semiconductor wafer
GB1574525A (en) * 1977-04-13 1980-09-10 Philips Electronic Associated Method of manufacturing semiconductor devices and semiconductor devices manufactured by the method
GB2030551B (en) * 1978-09-22 1982-08-04 Philips Electronic Associated Growing a gaas layer doped with s se or te
US4664960A (en) * 1982-09-23 1987-05-12 Energy Conversion Devices, Inc. Compositionally varied materials and method for synthesizing the materials
US4520039A (en) * 1982-09-23 1985-05-28 Sovonics Solar Systems Compositionally varied materials and method for synthesizing the materials
CH651592A5 (de) * 1982-10-26 1985-09-30 Balzers Hochvakuum Dampfquelle fuer vakuumbedampfungsanlagen.
US4550411A (en) * 1983-03-30 1985-10-29 Vg Instruments Group Limited Sources used in molecular beam epitaxy
CH654596A5 (de) * 1983-09-05 1986-02-28 Balzers Hochvakuum Verdampferzelle.
JPS60178616A (ja) * 1984-02-27 1985-09-12 Hitachi Ltd 分子線エピタキシ装置の試料回転ホルダ
US5096558A (en) * 1984-04-12 1992-03-17 Plasco Dr. Ehrich Plasma - Coating Gmbh Method and apparatus for evaporating material in vacuum
JPS6261315A (ja) * 1985-09-11 1987-03-18 Sharp Corp 分子線エピタキシ−装置
JPH0727861B2 (ja) * 1987-03-27 1995-03-29 富士通株式会社 ▲iii▼−▲v▼族化合物半導体結晶の成長方法
JP2743377B2 (ja) * 1987-05-20 1998-04-22 日本電気株式会社 半導体薄膜の製造方法
GB8726639D0 (en) * 1987-11-13 1987-12-16 Vg Instr Groups Ltd Vacuum evaporation & deposition
US4999316A (en) * 1988-03-23 1991-03-12 Massachusetts Institute Of Technology Method for forming tapered laser or waveguide optoelectronic structures
US4855255A (en) * 1988-03-23 1989-08-08 Massachusetts Institute Of Technology Tapered laser or waveguide optoelectronic method
GB2230792A (en) * 1989-04-21 1990-10-31 Secr Defence Multiple source physical vapour deposition.
DE4011460A1 (de) * 1990-04-09 1991-10-10 Leybold Ag Vorrichtung zum direkten beheizen eines substrattraegers
US5480813A (en) 1994-06-21 1996-01-02 At&T Corp. Accurate in-situ lattice matching by reflection high energy electron diffraction
DE102005013875A1 (de) * 2005-03-24 2006-11-02 Creaphys Gmbh Heizeinrichtung, Beschichtungsanlage und Verfahren zur Verdampfung oder Sublimation von Beschichtungsmaterialien
JP5017950B2 (ja) * 2005-09-21 2012-09-05 株式会社Sumco エピタキシャル成長装置の温度管理方法
CN103460340A (zh) * 2011-02-11 2013-12-18 陶氏环球技术有限责任公司 用于形成适合用于微电子器件的磷属元素化物组合物的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3211589A (en) * 1960-07-14 1965-10-12 Hughes Aircraft Co P-n junction formation in iii-v semiconductor compounds
GB1053033A (de) * 1964-04-03
US3387163A (en) * 1965-12-20 1968-06-04 Bell Telephone Labor Inc Luminescent semiconductor devices including a compensated zone with a substantially balanced concentration of donors and acceptors
US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices
US3615931A (en) * 1968-12-27 1971-10-26 Bell Telephone Labor Inc Technique for growth of epitaxial compound semiconductor films

Also Published As

Publication number Publication date
IT954542B (it) 1973-09-15
GB1381809A (en) 1975-01-29
DE2214404B2 (de) 1977-04-14
FR2130697B1 (de) 1977-01-14
DE2214404C3 (de) 1982-08-19
CA925629A (en) 1973-05-01
DE2214404A1 (de) 1972-09-28
US3751310A (en) 1973-08-07
JPS5443351B1 (de) 1979-12-19
BE781053A (fr) 1972-07-17
NL7203890A (de) 1972-09-27
FR2130697A1 (de) 1972-11-03

Similar Documents

Publication Publication Date Title
SE385547B (sv) Sett att framstella en halvledarkropp enligt krav 1 i svenska patentet 367 893 innefattande successivt, odlade epitaxiala omraden pa en halvledaryta
SE383803B (sv) Sett att framstella en halvledaranordning
SE405604B (sv) Analogiforfarande for framstellning av 1,2,4-triazol-3-karboxamid-1-(beta-d-ribofuranosyl)
IT948130B (it) Procedimento per la produzione di una striscia di elementi di fissaggio preventivamente orientati
IT963303B (it) Laser a semiconduttore
IT996046B (it) Procedimento per la produzione di 2,1,3 benzotiadiazin 4 one 2,2 biossidi
DE2166907A1 (de) Zinkenbefestigung am rotor von bodenbearbeitungsmaschinen
SE373583B (sv) Sett att framstella 4' -n- tertieramino-metyl-2', 11-spirodibenso Ÿb,eŸ oxepin-1',3'- dioxolaner
IT976112B (it) Procedimento per la fabbricazione di dispositivi semiconduttori
SE392103B (sv) Sett att framstella 1,2-bensisotiazolin-3-oner
AT315695B (de) Am Schuhvorderteil angreifendes fangriemenartiges Verbindungsglied
BE793112A (fr) Pyridinium-s-triazines agissant sur la croissance des plantes
SE385591B (sv) Sett att framstella 16,17- omettade steroider tillhorande pregnanserien
BE770287A (fr) Perfectionnements apportes aux procedes de fabrication de resines, resines obtenues par ces procedes et produits realises a partir de ces resines
SE385903B (sv) Sett att framstella 3,16alfa,17xi-trihydroxi-11beta-alkoxi-ostra-1,3,5 (10)- triener
SE382990B (sv) Sett enligt svenska patentet 352 643 varvid det cellfria penicillinacylaset olosliggores
IT968315B (it) Procedimento per la produzione di 2.5 dimetil 2.4 esadien
IT972907B (it) Attrezzo per coltivare il terreno
SE405118B (sv) Sett att framstella 2,4-diamino-5-bensylpyrimidiner
BE781021A (fr) Fabrication d'isoprene
SE7604827L (sv) Forfarande for framstellning av en halvledare jemte halvledare framstelld enligt detta forfarande
SE395117B (sv) Streckriktanleggning
IT946458B (it) Procedimento per la fabbricazione di basamenti per piante
BE792836A (fr) Perfectionnements apportes a la fabrication de produits alveolaires
SE385012B (sv) Sett att framstella 4,9,11 - trien-steroid-derivat