SE330302B - - Google Patents

Info

Publication number
SE330302B
SE330302B SE15633/66A SE1563366A SE330302B SE 330302 B SE330302 B SE 330302B SE 15633/66 A SE15633/66 A SE 15633/66A SE 1563366 A SE1563366 A SE 1563366A SE 330302 B SE330302 B SE 330302B
Authority
SE
Sweden
Application number
SE15633/66A
Inventor
H Caswell
E Stern
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SE330302B publication Critical patent/SE330302B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
SE15633/66A 1965-11-15 1966-11-15 SE330302B (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US507729A US3400066A (en) 1965-11-15 1965-11-15 Sputtering processes for depositing thin films of controlled thickness

Publications (1)

Publication Number Publication Date
SE330302B true SE330302B (ja) 1970-11-09

Family

ID=24019872

Family Applications (1)

Application Number Title Priority Date Filing Date
SE15633/66A SE330302B (ja) 1965-11-15 1966-11-15

Country Status (9)

Country Link
US (1) US3400066A (ja)
BE (1) BE688958A (ja)
CH (1) CH455441A (ja)
DE (1) DE1515308B2 (ja)
ES (1) ES333127A1 (ja)
FR (1) FR1498863A (ja)
GB (1) GB1091267A (ja)
NL (1) NL152029B (ja)
SE (1) SE330302B (ja)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1474973A (fr) * 1966-02-16 1967-03-31 Radiotechnique Coprim Rtc Procédé de fabrication d'une couche de contact pour dispositifs semi-conducteurs et produits obtenus
US3506556A (en) * 1968-02-28 1970-04-14 Ppg Industries Inc Sputtering of metal oxide films in the presence of hydrogen and oxygen
DE2126887C3 (de) * 1971-05-29 1981-11-19 Ibm Deutschland Gmbh, 7000 Stuttgart Niederschlagen magnetisierbarer Schichten durch Kathodenzerstäubung
US3912612A (en) * 1972-07-14 1975-10-14 Westinghouse Electric Corp Method for making thin film superconductors
US4021277A (en) * 1972-12-07 1977-05-03 Sprague Electric Company Method of forming thin film resistor
US3856647A (en) * 1973-05-15 1974-12-24 Ibm Multi-layer control or stress in thin films
US4043888A (en) * 1973-07-30 1977-08-23 Westinghouse Electric Corporation Superconductive thin films having transition temperature substantially above the bulk materials
US3866041A (en) * 1973-10-23 1975-02-11 Allis Chalmers Method and apparatus for evaluating the gas content of materials
NL7401859A (nl) * 1974-02-12 1975-08-14 Philips Nv Werkwijze voor het vervaardigen van een patroon en of meer lagen op een ondergrond door selijk verwijderen van deze laag of lagen sputteretsen en voorwerpen, in het bijzon- alfgeleiderinrichtingen, vervaardigd met ssing van deze werkwijze.
USRE29947E (en) * 1974-02-12 1979-03-27 U.S. Philips Corporation Semiconductor pattern delineation by sputter etching process
US4129848A (en) * 1975-09-03 1978-12-12 Raytheon Company Platinum film resistor device
US4204935A (en) * 1976-02-10 1980-05-27 Resista Fabrik Elektrischer Widerstande G.M.B.H. Thin-film resistor and process for the production thereof
US4205299A (en) * 1976-02-10 1980-05-27 Jurgen Forster Thin film resistor
US4169032A (en) * 1978-05-24 1979-09-25 International Business Machines Corporation Method of making a thin film thermal print head
US4310380A (en) * 1980-04-07 1982-01-12 Bell Telephone Laboratories, Incorporated Plasma etching of silicon
DE3107914A1 (de) * 1981-03-02 1982-09-16 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum beschichten von formteilen durch katodenzerstaeubung
CA1155798A (en) * 1981-03-30 1983-10-25 Shmuel Maniv Reactive deposition method and apparatus
DE3426795A1 (de) * 1984-07-20 1986-01-23 Battelle-Institut E.V., 6000 Frankfurt Verfahren zur herstellung von hochverschleissfesten titannitrid-schichten
FR2569000B1 (fr) * 1984-08-10 1989-01-27 Centre Nat Rech Scient Procede et appareils pour le controle in situ de l'epaisseur de couches ultraminces deposees par pulverisation ionique
JPH02217467A (ja) * 1989-02-17 1990-08-30 Pioneer Electron Corp 対向ターゲット型スパッタリング装置
US5182420A (en) * 1989-04-25 1993-01-26 Cray Research, Inc. Method of fabricating metallized chip carriers from wafer-shaped substrates
US5122620A (en) * 1989-06-15 1992-06-16 Cray Research Inc. Chip carrier with terminating resistive elements
US5258576A (en) * 1989-06-15 1993-11-02 Cray Research, Inc. Integrated circuit chip carrier lid
US4949453A (en) * 1989-06-15 1990-08-21 Cray Research, Inc. Method of making a chip carrier with terminating resistive elements
USRE34395E (en) * 1989-06-15 1993-10-05 Cray Research, Inc. Method of making a chip carrier with terminating resistive elements
US5039570A (en) * 1990-04-12 1991-08-13 Planar Circuit Technologies, Inc. Resistive laminate for printed circuit boards, method and apparatus for forming the same
US6703666B1 (en) * 1999-07-14 2004-03-09 Agere Systems Inc. Thin film resistor device and a method of manufacture therefor
CN112259455B (zh) * 2020-10-19 2024-01-26 扬州扬杰电子科技股份有限公司 一种改善带钝化层结构的Ag面产品金属残留的方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3336154A (en) * 1963-12-20 1967-08-15 Sperry Rand Corp Testing apparatus and method

Also Published As

Publication number Publication date
ES333127A1 (es) 1967-12-01
GB1091267A (en) 1967-11-15
CH455441A (de) 1968-07-15
NL152029B (nl) 1977-01-17
BE688958A (ja) 1967-03-31
US3400066A (en) 1968-09-03
DE1515308A1 (de) 1969-09-11
DE1515308B2 (de) 1975-03-27
NL6615992A (ja) 1967-05-16
FR1498863A (fr) 1967-10-20

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