SE0702770L - Förfarande för plasmaaktiverad kemisk ångdeponering och plasmasönderdelningsenhet - Google Patents

Förfarande för plasmaaktiverad kemisk ångdeponering och plasmasönderdelningsenhet

Info

Publication number
SE0702770L
SE0702770L SE0702770A SE0702770A SE0702770L SE 0702770 L SE0702770 L SE 0702770L SE 0702770 A SE0702770 A SE 0702770A SE 0702770 A SE0702770 A SE 0702770A SE 0702770 L SE0702770 L SE 0702770L
Authority
SE
Sweden
Prior art keywords
plasma
anode
decomposition unit
cathode
coating
Prior art date
Application number
SE0702770A
Other languages
English (en)
Other versions
SE532505C2 (sv
Inventor
Vladimir Kouznetsov
Aake Hjalmarsson
Mihai Nicolescu
Klim Kouznetsov
Original Assignee
Plasmatrix Materials Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plasmatrix Materials Ab filed Critical Plasmatrix Materials Ab
Priority to SE0702770A priority Critical patent/SE532505C2/sv
Priority to ES08860425T priority patent/ES2727726T3/es
Priority to US12/747,338 priority patent/US8883246B2/en
Priority to PCT/SE2008/000699 priority patent/WO2009075629A1/en
Priority to EP08860425.1A priority patent/EP2229466B1/en
Publication of SE0702770L publication Critical patent/SE0702770L/sv
Publication of SE532505C2 publication Critical patent/SE532505C2/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
SE0702770A 2007-12-12 2007-12-12 Förfarande för plasmaaktiverad kemisk ångdeponering och plasmasönderdelningsenhet SE532505C2 (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE0702770A SE532505C2 (sv) 2007-12-12 2007-12-12 Förfarande för plasmaaktiverad kemisk ångdeponering och plasmasönderdelningsenhet
ES08860425T ES2727726T3 (es) 2007-12-12 2008-12-12 Método de deposición de vapores químicos activado por plasma y aparato para el mismo
US12/747,338 US8883246B2 (en) 2007-12-12 2008-12-12 Plasma activated chemical vapour deposition method and apparatus therefor
PCT/SE2008/000699 WO2009075629A1 (en) 2007-12-12 2008-12-12 Plasma activated chemical vapour deposition method and apparatus therefor
EP08860425.1A EP2229466B1 (en) 2007-12-12 2008-12-12 Plasma activated chemical vapour deposition method and apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0702770A SE532505C2 (sv) 2007-12-12 2007-12-12 Förfarande för plasmaaktiverad kemisk ångdeponering och plasmasönderdelningsenhet

Publications (2)

Publication Number Publication Date
SE0702770L true SE0702770L (sv) 2009-08-14
SE532505C2 SE532505C2 (sv) 2010-02-09

Family

ID=40755742

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0702770A SE532505C2 (sv) 2007-12-12 2007-12-12 Förfarande för plasmaaktiverad kemisk ångdeponering och plasmasönderdelningsenhet

Country Status (5)

Country Link
US (1) US8883246B2 (sv)
EP (1) EP2229466B1 (sv)
ES (1) ES2727726T3 (sv)
SE (1) SE532505C2 (sv)
WO (1) WO2009075629A1 (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011117994A1 (de) * 2011-11-09 2013-05-16 Oerlikon Trading Ag, Trübbach HIPIMS-Schichten
US9711335B2 (en) 2013-07-17 2017-07-18 Advanced Energy Industries, Inc. System and method for balancing consumption of targets in pulsed dual magnetron sputtering (DMS) processes
DE102018204585A1 (de) * 2017-03-31 2018-10-04 centrotherm international AG Plasmagenerator, Plasma-Behandlungsvorrichtung und Verfahren zum gepulsten Bereitstellen von elektrischer Leistung

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2029411C1 (ru) 1992-04-29 1995-02-20 Научно-производственная фирма "Плазматек" Способ плазменного травления тонких пленок
RU2058429C1 (ru) 1993-06-17 1996-04-20 Георгий Владимирович Ходаченко Способ напыления пленок
KR960014905B1 (ko) 1993-11-06 1996-10-21 한국과학기술연구원 직류방전 플라즈마 화학증착 다이아몬드 합성방법
KR960012316B1 (ko) 1994-01-07 1996-09-18 한국과학기술연구원 다이아몬드상 경질 카본 필름의 합성법
SE9704607D0 (sv) * 1997-12-09 1997-12-09 Chemfilt R & D Ab A method and apparatus for magnetically enhanced sputtering
DE19960092A1 (de) * 1999-12-14 2001-07-12 Bosch Gmbh Robert Beschichtungsverfahren
WO2001061070A1 (en) 2000-02-18 2001-08-23 G.T. Equipment Technologies Inc. Method and apparatus for chemical vapor deposition of polysilicon
SE519931C2 (sv) * 2000-06-19 2003-04-29 Chemfilt R & D Ab Anordning och förfarande för pulsad, starkt joniserad magnetronsputtering
US6845734B2 (en) * 2002-04-11 2005-01-25 Micron Technology, Inc. Deposition apparatuses configured for utilizing phased microwave radiation
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US7018940B2 (en) * 2002-12-30 2006-03-28 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
JP4233085B2 (ja) * 2003-02-17 2009-03-04 日本碍子株式会社 薄膜作製方法および装置
US7303789B2 (en) * 2003-02-17 2007-12-04 Ngk Insulators, Ltd. Methods for producing thin films on substrates by plasma CVD
JP2005022950A (ja) 2003-07-04 2005-01-27 Rikizo Hatakeyama 単層カーボンナノチューブの製造法方法
SE0303136D0 (sv) 2003-11-24 2003-11-24 Chemfilt R & D Ab Method and apparatus for reactive soilid-gas-plasma deposition
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
JP2005272948A (ja) 2004-03-25 2005-10-06 Shinko Seiki Co Ltd プラズマｃｖｄ装置
JP2006093342A (ja) 2004-09-22 2006-04-06 Asm Japan Kk Ｄｃバイアス電圧測定回路及びそれを含むプラズマｃｖｄ処理装置
SE0402644D0 (sv) * 2004-11-02 2004-11-02 Biocell Ab Method and apparatus for producing electric discharges
US7560144B2 (en) 2005-03-22 2009-07-14 Asm Japan K.K. Method of stabilizing film quality of low-dielectric constant film
US20070042131A1 (en) 2005-08-22 2007-02-22 Applied Materials, Inc., A Delaware Corporation Non-intrusive plasma monitoring system for arc detection and prevention for blanket CVD films
US8460763B2 (en) 2007-03-01 2013-06-11 Plasmatrix Materials Ab Method for enhancing dynamic stiffness

Also Published As

Publication number Publication date
US20110081477A1 (en) 2011-04-07
US8883246B2 (en) 2014-11-11
EP2229466A1 (en) 2010-09-22
EP2229466B1 (en) 2019-03-20
ES2727726T3 (es) 2019-10-18
EP2229466A4 (en) 2015-11-04
SE532505C2 (sv) 2010-02-09
WO2009075629A1 (en) 2009-06-18

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