SA519410908B1 - مستشعرات التأثير المجالي - Google Patents

مستشعرات التأثير المجالي

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Publication number
SA519410908B1
SA519410908B1 SA519410908A SA519410908A SA519410908B1 SA 519410908 B1 SA519410908 B1 SA 519410908B1 SA 519410908 A SA519410908 A SA 519410908A SA 519410908 A SA519410908 A SA 519410908A SA 519410908 B1 SA519410908 B1 SA 519410908B1
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Saudi Arabia
Prior art keywords
nanostructure
active moiety
channel
field effect
effect sensors
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SA519410908A
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English (en)
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بويان بويانوف
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.الومينا، إنك
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Publication of SA519410908B1 publication Critical patent/SA519410908B1/ar

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    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
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    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/54313—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals the carrier being characterised by its particulate form
    • G01N33/54346—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
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    • B82Y40/00—Manufacture or treatment of nanostructures
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    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
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    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
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Abstract

يتعلق الاختراع بجهاز وطرق تم الكشف عنها لمستشعرات تأثير مجال جزيء molecule field effect sensors منفرد به قنوات موصلة conductive channels وظيفية بالنسبة للجزء الفعال المنفرد. تقوم منطقة من البنية التي بحجم النانو (مثل السلك بحجم النانو من السيليكون silicon nanowire أو الأنبوب بحجم النانو من الكربون carbon nanotube) بتوفير قناة موصلة conductive channel. يتم تعديل كثافة الحالة التي تم احتجازها للبنية التي بحجم النانو بالنسبة لجزء من البنية التي بحجم النانو وبالقرب من الموضع الذي يرتبط فيه الجزء الفعال مع البنية التي بحجم النانو. وفي أحد الأمثلة، تشتمل وسيلة شبه الموصل semiconductor device على مصدر ووسيلة تصريف drain، وقناة تشتمل على بنية بحجم النانو لها جزء معدل مع كثافة حالة احتجاز متزايدة، ويكون الجزء المعدل أيضاً وظيفياً بالنسبة للجزء الفعال. ويكون طرف البوابة gate terminal في اتصال كهربي مع البنية التي بحجم النانو. وعندما يتم تنويع الإشارة الكهربية بالنسبة للمحلول الأيوني ionic solution التي تكون في تلامس مع قناة البنية التي بحجم النانو nanostructure channel، فإن التغييرات في التيار ت
SA519410908A 2017-08-01 2019-12-25 مستشعرات التأثير المجالي SA519410908B1 (ar)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762539813P 2017-08-01 2017-08-01
PCT/US2018/040439 WO2019027604A1 (en) 2017-08-01 2018-06-29 FIELD EFFECT SENSORS

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SA519410908B1 true SA519410908B1 (ar) 2022-08-09

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US (1) US10551342B2 (ar)
EP (1) EP3646018B1 (ar)
JP (1) JP6833079B2 (ar)
KR (1) KR102213538B1 (ar)
CN (1) CN111051871B (ar)
AU (2) AU2018310436A1 (ar)
BR (1) BR112019028104B1 (ar)
CA (1) CA3067245C (ar)
IL (1) IL271295B (ar)
MX (1) MX2019014905A (ar)
PH (1) PH12019502908A1 (ar)
RU (1) RU2740358C1 (ar)
SA (1) SA519410908B1 (ar)
SG (1) SG11201912263VA (ar)
TW (1) TWI709241B (ar)
WO (1) WO2019027604A1 (ar)
ZA (1) ZA201908275B (ar)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10851131B2 (en) 2018-02-16 2020-12-01 Illumina, Inc. Charge-tagged nucleotides and methods of use thereof
EP3772640B1 (en) * 2019-08-09 2022-06-22 Sciosense B.V. Electric circuitry for strain measurement
TWI731444B (zh) * 2019-10-21 2021-06-21 財團法人國家實驗研究院 癌胚胎抗原之檢測方法
RU2749698C1 (ru) * 2020-11-17 2021-06-16 федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский политехнический университет Петра Великого" (ФГАОУ ВО "СПбПУ") Биомолекулярный сенсор с микроэлектронным генератором электромагнитной волны
CN113960128B (zh) * 2020-12-15 2022-08-23 有研工程技术研究院有限公司 基于钾离子适配体修饰的硅纳米线场效应管生物传感器
US20220236215A1 (en) * 2021-01-25 2022-07-28 University Of Central Florida Research Foundation, Inc. Plasmonic organic electrochemical transistor
CN114199969B (zh) * 2021-12-03 2023-04-28 清华大学 一种基于核酸适配体的纳米电极生物传感器及其应用
TWI832146B (zh) * 2022-01-21 2024-02-11 明志科技大學 具雙閘極之溶液式閘極石墨烯電晶體

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6567292B1 (en) * 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
WO2004034025A2 (en) 2002-10-10 2004-04-22 Nanosys, Inc. Nano-chem-fet based biosensors
DE10325150A1 (de) * 2003-05-31 2004-12-30 Hahn-Meitner-Institut Berlin Gmbh Parametrierte Halbleiterverbundstruktur mit integrierten Dotierungskanälen, Verfahren zur Herstellung und Anwendung davon
US7018880B2 (en) * 2003-12-22 2006-03-28 Texas Instruments Incorporated Method for manufacturing a MOS transistor having reduced 1/f noise
US20060102931A1 (en) * 2004-11-17 2006-05-18 Thomas Edward Kopley Field effect transistor having a carrier exclusion layer
US7923240B2 (en) * 2006-03-31 2011-04-12 Intel Corporation Photo-activated field effect transistor for bioanalyte detection
US20100027355A1 (en) * 2007-07-31 2010-02-04 Dao Thuy B Planar double gate transistor storage cell
KR101026468B1 (ko) 2008-09-10 2011-04-01 한국전자통신연구원 생분자 검출 장치 및 검출 방법
EP2366994A1 (en) 2010-03-18 2011-09-21 Wolfgang Knoll Biosensor on thin-film transistors
IL206241A0 (en) * 2010-06-08 2010-12-30 Fernando Patolsky Modified nanowires for use in detecting nitro - containing chemicals
US20140326600A1 (en) 2011-09-12 2014-11-06 Nanoselect, Inc. Carbon nanostructure electrochemical sensor and method
US9957472B2 (en) * 2011-09-22 2018-05-01 Georgia Tech Research Corporation Deterministic high-density single-cell trap array
KR101968990B1 (ko) * 2012-02-28 2019-04-15 라모트 앳 텔-아비브 유니버시티 리미티드 가상 매립된 나노와이어에 기초한 분자 센서
KR102220842B1 (ko) * 2012-03-31 2021-03-02 롱지튜드 플래쉬 메모리 솔루션즈 리미티드 복수의 산질화물 층들을 구비한 산화물-질화물-산화물 스택
WO2013158280A1 (en) * 2012-04-20 2013-10-24 The Trustees Of Columbia University In The City Of New York Systems and methods for single-molecule nucleic-acid assay platforms
EA020321B1 (ru) * 2012-06-05 2014-10-30 Федеральное Государственное Бюджетное Учреждение "Научно-Производственный Комплекс "Технологический Центр" Миэт" Чувствительный элемент датчика
KR101229392B1 (ko) 2012-09-12 2013-02-05 주식회사 아이엠헬스케어 오믹 접합을 이용하는 ｆｅｔ 기반 바이오 센서
TWI782259B (zh) * 2012-10-24 2022-11-01 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2015059704A1 (en) 2013-10-22 2015-04-30 Ramot At Tel-Aviv University Ltd. Method and system for sensing
US10054563B2 (en) * 2015-03-31 2018-08-21 Rge Smart Pte. Ltd. Optoelectronic pixel sensor
US20180088079A1 (en) 2015-04-03 2018-03-29 President And Fellows Of Harvard College Nanoscale wires with external layers for sensors and other applications
US20170059513A1 (en) 2015-08-31 2017-03-02 International Business Machines Corporation Hybrid ion-sensitive field-effect transistor
CA3007606A1 (en) 2015-12-09 2017-06-15 Ramot At Tel-Aviv University Ltd. Method and system for sensing
CN106129113B (zh) * 2016-07-11 2019-06-14 中国科学院微电子研究所 一种垂直双扩散金属氧化物半导体场效应晶体管
CN106971944A (zh) * 2017-05-22 2017-07-21 深圳市华星光电技术有限公司 金属氧化物薄膜晶体管的制备方法及其结构

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EP3646018B1 (en) 2023-08-09
CN111051871A (zh) 2020-04-21
US20190041354A1 (en) 2019-02-07
AU2018310436A1 (en) 2020-01-16
CN111051871B (zh) 2022-05-10
EP3646018A1 (en) 2020-05-06
IL271295A (en) 2020-01-30
IL271295B (en) 2021-09-30
BR112019028104B1 (pt) 2021-10-26
JP2020528542A (ja) 2020-09-24
WO2019027604A1 (en) 2019-02-07
AU2021203805A1 (en) 2021-07-08
PH12019502908A1 (en) 2020-09-14
KR20200017425A (ko) 2020-02-18
TWI709241B (zh) 2020-11-01
JP6833079B2 (ja) 2021-02-24
ZA201908275B (en) 2021-04-28
TW201911577A (zh) 2019-03-16
BR112019028104A2 (pt) 2020-07-28
MX2019014905A (es) 2021-12-13
SG11201912263VA (en) 2020-01-30
AU2021203805B2 (en) 2023-05-25
EP3646018A4 (en) 2020-11-18
US10551342B2 (en) 2020-02-04
CA3067245A1 (en) 2019-02-07
CA3067245C (en) 2020-10-20
RU2740358C1 (ru) 2021-01-13
KR102213538B1 (ko) 2021-02-08

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