RU95118667A - METHOD FOR PRODUCING PHOTOSENSITIVE DEVICES WITH CHARGING COMMUNICATION - Google Patents

METHOD FOR PRODUCING PHOTOSENSITIVE DEVICES WITH CHARGING COMMUNICATION

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Publication number
RU95118667A
RU95118667A RU95118667/25A RU95118667A RU95118667A RU 95118667 A RU95118667 A RU 95118667A RU 95118667/25 A RU95118667/25 A RU 95118667/25A RU 95118667 A RU95118667 A RU 95118667A RU 95118667 A RU95118667 A RU 95118667A
Authority
RU
Russia
Prior art keywords
photosensitive devices
charging communication
charge
producing photosensitive
sensitive photosensitive
Prior art date
Application number
RU95118667/25A
Other languages
Russian (ru)
Other versions
RU2095889C1 (en
Inventor
Л.Н. Хитрова
В.Ф. Евстафьев
Original Assignee
46 Центральный научно-исследовательский институт МО РФ
Filing date
Publication date
Application filed by 46 Центральный научно-исследовательский институт МО РФ filed Critical 46 Центральный научно-исследовательский институт МО РФ
Priority to RU9595118667A priority Critical patent/RU2095889C1/en
Priority claimed from RU9595118667A external-priority patent/RU2095889C1/en
Application granted granted Critical
Publication of RU2095889C1 publication Critical patent/RU2095889C1/en
Publication of RU95118667A publication Critical patent/RU95118667A/en

Links

Claims (1)

Способ изготовления фоточувствительных приборов с зарядовой связью, включающий создание на кремниевых пластинах активных и пассивных элементов, формирование металлической разводки из алюминия, вжигание алюминия, контроль на функционирование и отбраковку фоточувствительных приборов с зарядовой связью, отличающийся тем, что кремниевые пластины, содержащие менее 50% забракованных при контроле на функционирование фоточувствительных приборов с зарядовой связью, повергают отжигу в газовой смеси водорода и инертного газа с содержанием водорода от 30 до 80 об.% при 400 - 450oC в течение 10 - 16 ч, охлаждают в инертном газе и повторяют контроль на функционирование.A method of manufacturing charge-sensitive photosensitive devices, including the creation of active and passive elements on silicon wafers, the formation of aluminum metal wiring, the burning of aluminum, the operation and rejection of charge-sensitive photosensitive devices, characterized in that silicon wafers containing less than 50% rejected when monitoring the operation of charge-sensitive photosensitive devices, they anneal in a gas mixture of hydrogen and an inert gas containing Orod from 30 to 80% at 400 -. 450 o C for 10 - 16 hours, cooled in an inert gas to control and repeat the operation.
RU9595118667A 1995-10-31 1995-10-31 Photosensitive charge-coupled device manufacturing process RU2095889C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU9595118667A RU2095889C1 (en) 1995-10-31 1995-10-31 Photosensitive charge-coupled device manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU9595118667A RU2095889C1 (en) 1995-10-31 1995-10-31 Photosensitive charge-coupled device manufacturing process

Publications (2)

Publication Number Publication Date
RU2095889C1 RU2095889C1 (en) 1997-11-10
RU95118667A true RU95118667A (en) 1998-01-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU9595118667A RU2095889C1 (en) 1995-10-31 1995-10-31 Photosensitive charge-coupled device manufacturing process

Country Status (1)

Country Link
RU (1) RU2095889C1 (en)

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