RU95113458A - SILICON SILICON ON QUARTZ - Google Patents

Claims (18)

1. A method of manufacturing single-crystal silicon pads (34) on a quartz substrate (20), comprising depositing a layer (30) inhibiting etching on a single-crystal silicon substrate (18); deposition of a single-crystal silicon layer (32) on a layer (30) inhibiting etching; attaching a quartz substrate (20) to a single crystal silicon layer (22) at room temperature; sealing and fixing with glue (22) the edges of the single-crystal silicon substrate (18), the etching inhibiting layer (30), the single-crystal silicon layer (32) and the quartz substrate (20); grinding part of the silicon substrate (18) and part of the adhesive (22); etching the remainder of the silicon substrate (18); removing the remainder of the glue (22); etching the etching inhibiting layer (30), applying a photoresist mask to the single-crystal silicon layer (32) to make pads (34) on the single-crystal silicon layer (32); etching of single-crystal silicon sites (34) and diffuse bonding of single-crystal silicon sites (34) with a quartz substrate (20).  2. The method according to p. 1, characterized in that the diffuse bonding of single-crystal silicon pads (34) with a quartz substrate (20) is carried out at high temperature.  3. The method according to p. 2, characterized in that it further thermally oxidizes the exposed surfaces of the single-crystal silicon pads (34).  4. The method according to p. 3, characterized in that it additionally produces an active matrix structure (11) of image elements and built-in pathogens (13) of rows and columns on single-crystal silicon pads (34) for a liquid crystal display.  5. The method according to p. 3, characterized in that it further produces an active matrix structure (11) of image elements and built-in pathogens (13) of rows and columns on single-crystal silicon pads (34) for an electroluminescent display.  6. The method according to p. 3, characterized in that it further produces an active matrix structure (11) of image elements and built-in pathogens (13) of rows and columns on single-crystal silicon pads (34) for a dot matrix display.  7. A method of manufacturing single-crystal silicon pads (34) on a high-temperature substrate at room temperature, including the deposition of a layer (30) inhibiting etching on a silicon substrate (18); deposition of a single-crystal silicon layer (32) on a layer (30) inhibiting etching; attaching a high-temperature substrate to a single-crystal silicon layer (32); fixing and sealing the edges of the silicon substrate (18) of the etching inhibiting layer (30) and the single-crystal silicon layer (32) on a high-temperature substrate; grinding a portion of the silicon substrate (18); etching the remainder of the silicon substrate (18); glue removal (22); etching a layer (30) inhibiting etching; applying a mask to a single-crystal silicon layer (32) to perform pads (34) on a single-crystal silicon layer (32) and etching of single-crystal silicon pads (34).  8. A method according to claim 7, characterized in that an active matrix structure (11) of image elements and built-in pathogens (13) of rows and columns on single-crystal silicon substrates (34) for a liquid crystal display are manufactured.  9. The method according to p. 7, characterized in that it further produces an active matrix structure (11) of image elements and built-in pathogens (13) of rows and columns on single-crystal silicon substrates (34) for an electroluminescent display.  10. The method according to p. 7, characterized in that they produce an active matrix structure (11) of image elements and built-in pathogens (13) of rows and columns on single-crystal silicon substrates (34) for a dot matrix display.  11. A method of manufacturing a single-crystal silicon pads (34) on a high-temperature substrate at room temperature, comprising deposition of the inhibitory layer (30) on a silicon substrate; deposition of a single-crystal silicon layer (32) on the inhibitory layer (30); attaching a high-temperature substrate to a single-crystal silicon layer (32); fixing and sealing the edges of the silicon substrate (13), the inhibitory layer (30) and the single-crystal silicon layer (32) on a high-temperature substrate; removal of the silicon substrate (18) to the braking layer (30); glue removal (22); removing the inhibitory layer (30); applying a mask to a single-crystal silicon layer (32) to perform the pads (34) and etching the single-crystal silicon pads (34).  12. The method according to p. 11, characterized in that they produce an active matrix structure (11) of image elements and built-in pathogens (13) of rows and columns on single-crystal silicon substrates (34) for liquid crystal displays.  13. The method according to claim 11, characterized in that it further produces an active matrix structure (11) of image elements and built-in pathogens (13) of rows and columns on single-crystal silicon substrates (34) for electroluminescent displays.  14. The method according to p. 11, characterized in that they produce an active matrix structure (11) of image elements and built-in pathogens (13) of rows and columns on single-crystal silicon substrates (34) for dot matrix displays. 15. A method of manufacturing sites (34) of highly mobile thin-film transistors (40, 42) in the form of built-in pathogens (13) on a substrate (20), including epitaxial deposition of a silicon layer 2 μm thick, heavily doped with boron (P ++), in the form of a layer (30), inhibiting etching, on a single-crystal silicon substrate (18) with a thickness of about 0.022 inches, lightly doped with boron (P-), at a temperature of about 900 ^o C; epitaxial deposition of a single-crystal silicon layer (32) with a thickness of about 6 μm, lightly doped with boron (P-), on a silicon layer (30), which inhibits etching, at a temperature of about 900 ^o C, and the deviation of the surface of the single-crystal silicon layer (32) from perfectly flat surface no more than 0.3 microns; cleaning the surface of the single-crystal silicon layer (32) in a solution containing H ₂ O ₂ ; attachment of the surface of an amorphous quartz substrate (20) with a deviation of no more than 0.3 μm from a perfectly flat surface to the cleaned surface of a single-crystal silicon layer (32), and the surfaces of the quartz substrate (20) and silicon layer (32) are naturally strengthened by a hydrogen-oxygen bond (H-O) at room temperature; fixing and sealing the compound of the single-crystal silicon layer (32) and the quartz layer using EPO-TEK 301 glue applied to the edges of the silicon substrate (18), the etching inhibitor layer (30), the single-crystal silicon layer (32) and the quartz layer; grinding part of the silicon substrate (16) and part of the adhesive (22); etching the remainder of the silicon substrate (18) with ethylene diamine pyrocatechol; removing the remainder of the glue (22); determination of sites using a mask of photoresist deposited on a single-crystal silicon layer (32); dry etching of single-crystal silicon pads (34) by reactive ion etching of a portion of a single-crystal silicon layer in accordance with the marking of a mask from a photoresist; diffuse bonding of single-crystal silicon sites (34) with a quartz substrate at a temperature of about 1000 ^° C and thermal oxidation of single-crystal silicon sites (34) in oxygen at a temperature of about 1000 ^° C to form a layer of silicon dioxide with a thickness of 500 angstroms on silicon sites (34).  16. The method according to p. 15, characterized in that it further produces an active matrix structure (11) of image elements and built-in pathogens (13) of rows and columns on single-crystal silicon substrates (34) for a liquid crystal display.  17. The method according to p. 15, characterized in that they produce an active matrix structure (11) of image elements and built-in pathogens (13) of rows and columns on single-crystal silicon substrates (34) for an electroluminescent display.  18. The method according to p. 16, characterized in that it further produces an active matrix structure (11) of image elements and built-in pathogens (13) of rows and columns on single-crystal silicon substrates (34) for a dot matrix display.