RU2750998C2 - Способ изготовления последовательности фотогальванических слоев методом печати при комнатной температуре и последовательность фотогальванических слоев, полученная данным способом - Google Patents

Способ изготовления последовательности фотогальванических слоев методом печати при комнатной температуре и последовательность фотогальванических слоев, полученная данным способом Download PDF

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RU2750998C2
RU2750998C2 RU2019103581A RU2019103581A RU2750998C2 RU 2750998 C2 RU2750998 C2 RU 2750998C2 RU 2019103581 A RU2019103581 A RU 2019103581A RU 2019103581 A RU2019103581 A RU 2019103581A RU 2750998 C2 RU2750998 C2 RU 2750998C2
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particles
photovoltaic
sequence
subjected
reaction solution
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Даниэл ЛИНДЕР
Патрик ЛИНДЕР
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Дайнэмик Солар Системс Аг
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
    • H10F77/1227—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC characterised by the dopants
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/1625—Semiconductor nanoparticles embedded in semiconductor matrix
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Hybrid Cells (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Printing Methods (AREA)
RU2019103581A 2016-07-12 2017-07-11 Способ изготовления последовательности фотогальванических слоев методом печати при комнатной температуре и последовательность фотогальванических слоев, полученная данным способом RU2750998C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102016008383.2 2016-07-12
DE102016008383 2016-07-12
PCT/DE2017/100572 WO2018010727A1 (de) 2016-07-12 2017-07-11 Raumtemperatur-druckverfahren zur herstellung einer pv-schichtfolge und verfahrensgemäss erhaltene pv-schichtfolge

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RU2019103581A RU2019103581A (ru) 2020-08-12
RU2019103581A3 RU2019103581A3 (cg-RX-API-DMAC10.html) 2020-08-25
RU2750998C2 true RU2750998C2 (ru) 2021-07-07

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US (1) US11404592B2 (cg-RX-API-DMAC10.html)
EP (1) EP3523829B1 (cg-RX-API-DMAC10.html)
JP (2) JP2019522382A (cg-RX-API-DMAC10.html)
CN (1) CN109743886B (cg-RX-API-DMAC10.html)
BR (1) BR112019000712B1 (cg-RX-API-DMAC10.html)
DE (1) DE102017115533A1 (cg-RX-API-DMAC10.html)
PL (1) PL3523829T3 (cg-RX-API-DMAC10.html)
RU (1) RU2750998C2 (cg-RX-API-DMAC10.html)
WO (1) WO2018010727A1 (cg-RX-API-DMAC10.html)

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DE102020003811A1 (de) 2020-06-25 2021-12-30 Dynamic Solar Systems Ag Fußbodenheizungs-System mit verbessertem Schichtaufbau
US20230022793A1 (en) 2021-07-21 2023-01-26 Steve Kohn Hemp paper bags

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US20130153027A1 (en) * 2011-12-19 2013-06-20 Nthdegree Technologies Worldwide Inc. Forming graded index lens in an all atmospheric pressure printing process to form photovoltaic panels
US9274366B2 (en) * 2011-02-09 2016-03-01 Japan Display Inc. Display device
US20160126417A1 (en) * 2007-05-31 2016-05-05 Nthdegree Technologies Worldwide Inc. Light Emitting, Photovoltaic Or Other Electronic Apparatus and System

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US20100167441A1 (en) * 2007-05-31 2010-07-01 Nthdegree Technologies Worldwide Inc. Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System
US20160126417A1 (en) * 2007-05-31 2016-05-05 Nthdegree Technologies Worldwide Inc. Light Emitting, Photovoltaic Or Other Electronic Apparatus and System
US9274366B2 (en) * 2011-02-09 2016-03-01 Japan Display Inc. Display device
US20130153027A1 (en) * 2011-12-19 2013-06-20 Nthdegree Technologies Worldwide Inc. Forming graded index lens in an all atmospheric pressure printing process to form photovoltaic panels

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RU2019103581A3 (cg-RX-API-DMAC10.html) 2020-08-25
US20190280135A1 (en) 2019-09-12
JP2022163082A (ja) 2022-10-25
JP7500092B2 (ja) 2024-06-17
PL3523829T3 (pl) 2024-03-18
BR112019000712A2 (pt) 2019-05-14
CN109743886A (zh) 2019-05-10
RU2019103581A (ru) 2020-08-12
JP2019522382A (ja) 2019-08-08
BR112019000712B1 (pt) 2023-02-28
CN109743886B (zh) 2022-11-22
WO2018010727A1 (de) 2018-01-18
US11404592B2 (en) 2022-08-02
EP3523829A1 (de) 2019-08-14
EP3523829B1 (de) 2023-09-06
DE102017115533A1 (de) 2018-01-18
EP3523829C0 (de) 2023-09-06

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