RU2639169C2 - Способ получения содержащих оксид индия покрытий - Google Patents

Способ получения содержащих оксид индия покрытий Download PDF

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Publication number
RU2639169C2
RU2639169C2 RU2015100052A RU2015100052A RU2639169C2 RU 2639169 C2 RU2639169 C2 RU 2639169C2 RU 2015100052 A RU2015100052 A RU 2015100052A RU 2015100052 A RU2015100052 A RU 2015100052A RU 2639169 C2 RU2639169 C2 RU 2639169C2
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Russia
Prior art keywords
indium
coating
oxoalkoxide
oxide
indium oxide
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RU2015100052A
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English (en)
Russian (ru)
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RU2015100052A (ru
Inventor
Юрген ШТАЙГЕР
Деннис ФРЮЛИНГ
Алексей МЕРКУЛОВ
Арне ХОППЕ
Original Assignee
Эвоник Дегусса Гмбх
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1254—Sol or sol-gel processing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemically Coating (AREA)
  • Formation Of Insulating Films (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Thin Film Transistor (AREA)
  • Paints Or Removers (AREA)
  • Surface Treatment Of Glass (AREA)
RU2015100052A 2012-06-13 2013-06-04 Способ получения содержащих оксид индия покрытий RU2639169C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012209918A DE102012209918A1 (de) 2012-06-13 2012-06-13 Verfahren zur Herstellung Indiumoxid-haltiger Schichten
DE102012209918.2 2012-06-13
PCT/EP2013/061452 WO2013186082A2 (de) 2012-06-13 2013-06-04 Verfahren zur herstellung indiumoxid-haltiger schichten

Publications (2)

Publication Number Publication Date
RU2015100052A RU2015100052A (ru) 2016-08-10
RU2639169C2 true RU2639169C2 (ru) 2017-12-20

Family

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Application Number Title Priority Date Filing Date
RU2015100052A RU2639169C2 (ru) 2012-06-13 2013-06-04 Способ получения содержащих оксид индия покрытий

Country Status (9)

Country Link
US (1) US9293326B2 (enExample)
EP (1) EP2861782B1 (enExample)
JP (1) JP6195916B2 (enExample)
KR (1) KR102032168B1 (enExample)
CN (1) CN104350179B (enExample)
DE (1) DE102012209918A1 (enExample)
RU (1) RU2639169C2 (enExample)
TW (1) TWI600726B (enExample)
WO (1) WO2013186082A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2815042C1 (ru) * 2023-06-13 2024-03-11 федеральное государственное бюджетное образовательное учреждение высшего образования "Южно-Российский государственный политехнический университет (НПИ) имени М.И. Платова" Способ получения наноразмерных порошков оксидов индия

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013212017A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Verfahren zur Herstellung von Indiumalkoxid-Verbindungen, die nach dem Verfahren herstellbaren Indiumalkoxid-Verbindungen und ihre Verwendung
DE102013212019A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung
JP5749411B1 (ja) * 2013-08-09 2015-07-15 国立大学法人北陸先端科学技術大学院大学 酸化物半導体層及びその製造方法、並びに酸化物半導体の前駆体、酸化物半導体層、半導体素子、及び電子デバイス
DE102014202718A1 (de) 2014-02-14 2015-08-20 Evonik Degussa Gmbh Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung
EP3342900A1 (de) * 2016-12-27 2018-07-04 Evonik Degussa GmbH Zusammensetzung zur reinigung sowie verhinderung von ablagerungen in beschichtungsdüsen für lösungsprozessierbare metalloxid-präkursoren
JP6795543B2 (ja) * 2018-04-27 2020-12-02 株式会社Ｊｏｌｅｄ 半導体装置の製造方法
CN115220300B (zh) * 2021-04-14 2025-10-17 华为技术有限公司 图案化材料、图案化组合物和图案形成方法

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US5237081A (en) * 1990-03-16 1993-08-17 Eastman Kodak Company Preparation of indium alkoxides soluble in organic solvents
RU2118402C1 (ru) * 1994-05-17 1998-08-27 Виктор Васильевич Дроботенко Способ получения металлооксидных покрытий (его варианты)
JP2000016812A (ja) * 1998-07-02 2000-01-18 Kansai Shingijutsu Kenkyusho:Kk 金属酸化物膜の製造方法
WO2011020781A1 (de) * 2009-08-21 2011-02-24 Evonik Degussa Gmbh Verfahren zur herstellung indiumoxid-haltiger schichten
WO2012010427A1 (de) * 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die herstellung indiumoxid-haltiger schichten

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JP4670026B2 (ja) * 2000-05-02 2011-04-13 富士化学株式会社 Ｉｎ２Ｏ３−ＳｎＯ２前駆体塗布液およびその製造方法ならびにＩｎ２Ｏ３−ＳｎＯ２薄膜の製造方法
US6958300B2 (en) 2002-08-28 2005-10-25 Micron Technology, Inc. Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
JP2004231495A (ja) * 2003-01-31 2004-08-19 Nippon Shokubai Co Ltd 金属酸化物膜の製造方法
JP4767616B2 (ja) 2005-07-29 2011-09-07 富士フイルム株式会社 半導体デバイスの製造方法及び半導体デバイス
JP2007245684A (ja) * 2006-03-20 2007-09-27 Sekisui Chem Co Ltd レプリカモールドの製造方法
CN101573471A (zh) 2006-12-29 2009-11-04 3M创新有限公司 固化含有金属烷氧化物的膜的方法
DE102009009337A1 (de) 2009-02-17 2010-08-19 Evonik Degussa Gmbh Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung
DE102009009338A1 (de) * 2009-02-17 2010-08-26 Evonik Degussa Gmbh Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
WO2010122274A1 (en) 2009-04-24 2010-10-28 Panasonic Corporation Oxide semiconductor
DE102009028802B3 (de) * 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
DE102009054997B3 (de) 2009-12-18 2011-06-01 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
DE102009054998A1 (de) 2009-12-18 2011-06-22 Evonik Degussa GmbH, 45128 Verfahren zur Herstellung von Indiumchlordialkoxiden
DE102010031895A1 (de) * 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010043668B4 (de) * 2010-11-10 2012-06-21 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
DE102011084145A1 (de) 2011-10-07 2013-04-11 Evonik Degussa Gmbh Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237081A (en) * 1990-03-16 1993-08-17 Eastman Kodak Company Preparation of indium alkoxides soluble in organic solvents
RU2118402C1 (ru) * 1994-05-17 1998-08-27 Виктор Васильевич Дроботенко Способ получения металлооксидных покрытий (его варианты)
JP2000016812A (ja) * 1998-07-02 2000-01-18 Kansai Shingijutsu Kenkyusho:Kk 金属酸化物膜の製造方法
WO2011020781A1 (de) * 2009-08-21 2011-02-24 Evonik Degussa Gmbh Verfahren zur herstellung indiumoxid-haltiger schichten
WO2012010427A1 (de) * 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die herstellung indiumoxid-haltiger schichten

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2815042C1 (ru) * 2023-06-13 2024-03-11 федеральное государственное бюджетное образовательное учреждение высшего образования "Южно-Российский государственный политехнический университет (НПИ) имени М.И. Платова" Способ получения наноразмерных порошков оксидов индия

Also Published As

Publication number Publication date
JP2015522509A (ja) 2015-08-06
WO2013186082A9 (de) 2014-02-13
EP2861782A2 (de) 2015-04-22
EP2861782B1 (de) 2016-03-09
KR20150024331A (ko) 2015-03-06
CN104350179A (zh) 2015-02-11
US20150170913A1 (en) 2015-06-18
WO2013186082A3 (de) 2014-08-07
TW201420697A (zh) 2014-06-01
DE102012209918A1 (de) 2013-12-19
JP6195916B2 (ja) 2017-09-13
TWI600726B (zh) 2017-10-01
RU2015100052A (ru) 2016-08-10
WO2013186082A2 (de) 2013-12-19
US9293326B2 (en) 2016-03-22
KR102032168B1 (ko) 2019-10-15
CN104350179B (zh) 2016-12-07

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