DE102012209918A1 - Verfahren zur Herstellung Indiumoxid-haltiger Schichten - Google Patents

Verfahren zur Herstellung Indiumoxid-haltiger Schichten Download PDF

Info

Publication number
DE102012209918A1
DE102012209918A1 DE102012209918A DE102012209918A DE102012209918A1 DE 102012209918 A1 DE102012209918 A1 DE 102012209918A1 DE 102012209918 A DE102012209918 A DE 102012209918A DE 102012209918 A DE102012209918 A DE 102012209918A DE 102012209918 A1 DE102012209918 A1 DE 102012209918A1
Authority
DE
Germany
Prior art keywords
indium
indium oxide
coating
layers
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102012209918A
Other languages
German (de)
English (en)
Inventor
Jürgen Steiger
Dennis Frühling
Alexey Merkulov
Arne Hoppe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evonik Operations GmbH
Original Assignee
Evonik Industries AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Industries AG filed Critical Evonik Industries AG
Priority to DE102012209918A priority Critical patent/DE102012209918A1/de
Priority to US14/407,681 priority patent/US9293326B2/en
Priority to PCT/EP2013/061452 priority patent/WO2013186082A2/de
Priority to JP2015516550A priority patent/JP6195916B2/ja
Priority to KR1020147034642A priority patent/KR102032168B1/ko
Priority to RU2015100052A priority patent/RU2639169C2/ru
Priority to CN201380030864.1A priority patent/CN104350179B/zh
Priority to EP13726540.1A priority patent/EP2861782B1/de
Priority to TW102120530A priority patent/TWI600726B/zh
Publication of DE102012209918A1 publication Critical patent/DE102012209918A1/de
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/003—Compounds containing elements of Groups 3 or 13 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1254—Sol or sol-gel processing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemically Coating (AREA)
  • Thin Film Transistor (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Surface Treatment Of Glass (AREA)
DE102012209918A 2012-06-13 2012-06-13 Verfahren zur Herstellung Indiumoxid-haltiger Schichten Withdrawn DE102012209918A1 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE102012209918A DE102012209918A1 (de) 2012-06-13 2012-06-13 Verfahren zur Herstellung Indiumoxid-haltiger Schichten
US14/407,681 US9293326B2 (en) 2012-06-13 2013-06-04 Method for producing indium oxide-containing layers
PCT/EP2013/061452 WO2013186082A2 (de) 2012-06-13 2013-06-04 Verfahren zur herstellung indiumoxid-haltiger schichten
JP2015516550A JP6195916B2 (ja) 2012-06-13 2013-06-04 酸化インジウム含有層の製造法
KR1020147034642A KR102032168B1 (ko) 2012-06-13 2013-06-04 산화 인듐-함유 층 제조 방법
RU2015100052A RU2639169C2 (ru) 2012-06-13 2013-06-04 Способ получения содержащих оксид индия покрытий
CN201380030864.1A CN104350179B (zh) 2012-06-13 2013-06-04 用于制备含氧化铟的层的方法
EP13726540.1A EP2861782B1 (de) 2012-06-13 2013-06-04 Verfahren zur herstellung indiumoxid-haltiger schichten
TW102120530A TWI600726B (zh) 2012-06-13 2013-06-10 製造含氧化銦層之方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012209918A DE102012209918A1 (de) 2012-06-13 2012-06-13 Verfahren zur Herstellung Indiumoxid-haltiger Schichten

Publications (1)

Publication Number Publication Date
DE102012209918A1 true DE102012209918A1 (de) 2013-12-19

Family

ID=48570153

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102012209918A Withdrawn DE102012209918A1 (de) 2012-06-13 2012-06-13 Verfahren zur Herstellung Indiumoxid-haltiger Schichten

Country Status (9)

Country Link
US (1) US9293326B2 (enExample)
EP (1) EP2861782B1 (enExample)
JP (1) JP6195916B2 (enExample)
KR (1) KR102032168B1 (enExample)
CN (1) CN104350179B (enExample)
DE (1) DE102012209918A1 (enExample)
RU (1) RU2639169C2 (enExample)
TW (1) TWI600726B (enExample)
WO (1) WO2013186082A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013212019A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102013212017A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Verfahren zur Herstellung von Indiumalkoxid-Verbindungen, die nach dem Verfahren herstellbaren Indiumalkoxid-Verbindungen und ihre Verwendung

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9552985B2 (en) * 2013-08-09 2017-01-24 Japan Advanced Institute Of Science And Technology Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic device
DE102014202718A1 (de) 2014-02-14 2015-08-20 Evonik Degussa Gmbh Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung
EP3342900A1 (de) * 2016-12-27 2018-07-04 Evonik Degussa GmbH Zusammensetzung zur reinigung sowie verhinderung von ablagerungen in beschichtungsdüsen für lösungsprozessierbare metalloxid-präkursoren
JP6795543B2 (ja) * 2018-04-27 2020-12-02 株式会社Ｊｏｌｅｄ 半導体装置の製造方法
CN115220300B (zh) * 2021-04-14 2025-10-17 华为技术有限公司 图案化材料、图案化组合物和图案形成方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6958300B2 (en) 2002-08-28 2005-10-25 Micron Technology, Inc. Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
JP2007042689A (ja) 2005-07-29 2007-02-15 Fujifilm Holdings Corp 金属アルコキシド溶液、それを用いた半導体デバイスの製造方法及び半導体デバイス
WO2008083310A1 (en) 2006-12-29 2008-07-10 3M Innovative Properties Company Method of curing metal alkoxide-containing films
WO2010094581A1 (de) 2009-02-17 2010-08-26 Evonik Degussa Gmbh Indiumalkoxid-haltige zusammensetzungen, verfahren zu ihrer herstellung und ihre verwendung
WO2010122274A1 (en) 2009-04-24 2010-10-28 Panasonic Corporation Oxide semiconductor
WO2011020781A1 (de) 2009-08-21 2011-02-24 Evonik Degussa Gmbh Verfahren zur herstellung indiumoxid-haltiger schichten
WO2011073005A2 (de) 2009-12-18 2011-06-23 Evonik Degussa Gmbh Verfahren zur herstellung von indiumoxid-haltigen schichten, nach dem verfahren hergestellte indiumoxid-haltige schichten und ihre verwendung
WO2011072887A1 (de) 2009-12-18 2011-06-23 Evonik Degussa Gmbh Verfahren zur herstellung von indiumchlordialkoxiden
WO2012010464A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die herstellung indiumoxid-haltiger schichten
WO2012010427A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die herstellung indiumoxid-haltiger schichten

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2659649B1 (fr) * 1990-03-16 1992-06-12 Kodak Pathe Preparation d'alkoxydes d'indium solubles dans les solvants organiques.
RU2118402C1 (ru) * 1994-05-17 1998-08-27 Виктор Васильевич Дроботенко Способ получения металлооксидных покрытий (его варианты)
NL1004635C2 (nl) * 1995-12-06 1999-01-12 Sumitomo Chemical Co Indiumoxyde-tinoxydepoeders en werkwijze voor het voortbrengen daarvan.
JP2000016812A (ja) * 1998-07-02 2000-01-18 Kansai Shingijutsu Kenkyusho:Kk 金属酸化物膜の製造方法
JP4670026B2 (ja) * 2000-05-02 2011-04-13 富士化学株式会社 Ｉｎ２Ｏ３−ＳｎＯ２前駆体塗布液およびその製造方法ならびにＩｎ２Ｏ３−ＳｎＯ２薄膜の製造方法
JP2004231495A (ja) * 2003-01-31 2004-08-19 Nippon Shokubai Co Ltd 金属酸化物膜の製造方法
JP2007245684A (ja) * 2006-03-20 2007-09-27 Sekisui Chem Co Ltd レプリカモールドの製造方法
DE102009009337A1 (de) 2009-02-17 2010-08-19 Evonik Degussa Gmbh Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung
DE102009028802B3 (de) * 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
DE102010043668B4 (de) * 2010-11-10 2012-06-21 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
DE102011084145A1 (de) 2011-10-07 2013-04-11 Evonik Degussa Gmbh Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6958300B2 (en) 2002-08-28 2005-10-25 Micron Technology, Inc. Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
JP2007042689A (ja) 2005-07-29 2007-02-15 Fujifilm Holdings Corp 金属アルコキシド溶液、それを用いた半導体デバイスの製造方法及び半導体デバイス
WO2008083310A1 (en) 2006-12-29 2008-07-10 3M Innovative Properties Company Method of curing metal alkoxide-containing films
WO2010094581A1 (de) 2009-02-17 2010-08-26 Evonik Degussa Gmbh Indiumalkoxid-haltige zusammensetzungen, verfahren zu ihrer herstellung und ihre verwendung
WO2010122274A1 (en) 2009-04-24 2010-10-28 Panasonic Corporation Oxide semiconductor
WO2011020781A1 (de) 2009-08-21 2011-02-24 Evonik Degussa Gmbh Verfahren zur herstellung indiumoxid-haltiger schichten
DE102009028801B3 (de) * 2009-08-21 2011-04-14 Evonik Degussa Gmbh Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung
WO2011073005A2 (de) 2009-12-18 2011-06-23 Evonik Degussa Gmbh Verfahren zur herstellung von indiumoxid-haltigen schichten, nach dem verfahren hergestellte indiumoxid-haltige schichten und ihre verwendung
WO2011072887A1 (de) 2009-12-18 2011-06-23 Evonik Degussa Gmbh Verfahren zur herstellung von indiumchlordialkoxiden
WO2012010464A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die herstellung indiumoxid-haltiger schichten
WO2012010427A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die herstellung indiumoxid-haltiger schichten

Non-Patent Citations (10)

* Cited by examiner, † Cited by third party
Title
Bradley et al., J. Chem. Soc., Chem. Commun., 1988, 1258-1259
Bradley et al., Polyhedron Vol. 9, No. 5, pp. 719-726, 1990
Carmalt et al. (Coordination Chemistry Reviews 250 (2006), 682-709)
DIN 53019
H. S. Kim, P. D. Byrne, A. Facchetti, T. J. Marks; J. Am. Chem. Soc. 2008, 130, 12580-12581
Jeong et al., J. Phys. Chem. C 2011, 115, 11773-11780
N. Turova et al., Journal of Sol-Gel Science and Technology, 2, 17-23 (1994)
N. Turova et al., Russian Chemical Reviews 73 (11), 1041-1064 (2004)
S. Chatterjee, S. R. Bindal, R. C. Mehrotra; J. Indian Chem. Soc.1976, 53, 867
Suh et al., J. Am. Chem. Soc. 2000, 122, 9396-9404

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013212019A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102013212017A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Verfahren zur Herstellung von Indiumalkoxid-Verbindungen, die nach dem Verfahren herstellbaren Indiumalkoxid-Verbindungen und ihre Verwendung

Also Published As

Publication number Publication date
JP2015522509A (ja) 2015-08-06
CN104350179A (zh) 2015-02-11
RU2639169C2 (ru) 2017-12-20
RU2015100052A (ru) 2016-08-10
KR20150024331A (ko) 2015-03-06
WO2013186082A9 (de) 2014-02-13
WO2013186082A2 (de) 2013-12-19
CN104350179B (zh) 2016-12-07
WO2013186082A3 (de) 2014-08-07
TWI600726B (zh) 2017-10-01
EP2861782B1 (de) 2016-03-09
US20150170913A1 (en) 2015-06-18
EP2861782A2 (de) 2015-04-22
JP6195916B2 (ja) 2017-09-13
TW201420697A (zh) 2014-06-01
KR102032168B1 (ko) 2019-10-15
US9293326B2 (en) 2016-03-22

Similar Documents

Publication Publication Date Title
DE102009028802B3 (de) Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
DE102009028801B3 (de) Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung
EP2595999B1 (de) Indiumoxoalkoxide für die herstellung indiumoxid-haltiger schichten
DE102010043668B4 (de) Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
EP2595998B1 (de) Indiumoxoalkoxide für die herstellung indiumoxid-haltiger schichten
DE102009054997B3 (de) Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
EP2398934B1 (de) Verfahren zur herstellung halbleitender indiumoxid-schichten, nach dem verfahren hergestellte indiumoxid-schichten und deren verwendung
EP2861782B1 (de) Verfahren zur herstellung indiumoxid-haltiger schichten
DE102009009338A1 (de) Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
EP2748857A1 (de) Verfahren zur herstellung von hochperformanten und elektrisch stabilen, halbleitenden metalloxidschichten, nach dem verfahren hergestellte schichten und deren verwendung
EP3013837B1 (de) Formulierungen zur herstellung indiumoxid-haltiger schichten, verfahren zu ihrer herstellung und ihre verwendung
EP3013838B1 (de) Verfahren zur herstellung von indiumalkoxid-verbindungen, die nach dem verfahren herstellbaren indiumalkoxid-verbindungen und ihre verwendung

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R081 Change of applicant/patentee

Owner name: EVONIK DEGUSSA GMBH, DE

Free format text: FORMER OWNER: EVONIK INDUSTRIES AG, 45128 ESSEN, DE

R120 Application withdrawn or ip right abandoned