RU2017108847A - Изгибание датчика изображений посредством принудительного вздутия подложки - Google Patents
Изгибание датчика изображений посредством принудительного вздутия подложки Download PDFInfo
- Publication number
- RU2017108847A RU2017108847A RU2017108847A RU2017108847A RU2017108847A RU 2017108847 A RU2017108847 A RU 2017108847A RU 2017108847 A RU2017108847 A RU 2017108847A RU 2017108847 A RU2017108847 A RU 2017108847A RU 2017108847 A RU2017108847 A RU 2017108847A
- Authority
- RU
- Russia
- Prior art keywords
- substrate
- image sensor
- volume
- chip
- curved
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims 27
- 238000005452 bending Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims 11
- 230000004048 modification Effects 0.000 claims 4
- 238000012986 modification Methods 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- -1 titanium hydride Chemical compound 0.000 claims 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000007664 blowing Methods 0.000 claims 1
- 229920001971 elastomer Polymers 0.000 claims 1
- 239000000806 elastomer Substances 0.000 claims 1
- 230000036571 hydration Effects 0.000 claims 1
- 238000006703 hydration reaction Methods 0.000 claims 1
- 238000006138 lithiation reaction Methods 0.000 claims 1
- 229910052744 lithium Inorganic materials 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 238000006213 oxygenation reaction Methods 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 238000007614 solvation Methods 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910000048 titanium hydride Inorganic materials 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Studio Devices (AREA)
- Light Receiving Elements (AREA)
- Facsimile Heads (AREA)
Claims (25)
1. Способ, содержащий этапы, на которых
размещают подложку на первой поверхности микросхемы датчика изображений, при этом первая поверхность микросхемы датчика изображений находится напротив второй поверхности микросхемы датчика изображений, и при этом вторая поверхность микросхемы датчика изображений включает в себя световые датчики, чтобы формировать электрические сигналы в ответ на принимаемый свет; и
модифицируют объем подложки так, чтобы передавать усилия на микросхеме датчика изображений, чтобы создавать изогнутую микросхему датчика изображений.
2. Способ по п. 1, в котором подложка содержит металлический сплав, и в котором модификация объема подложки содержит этап, на котором:
подвергают подложку воздействию водорода, чтобы предоставлять возможность подложке абсорбировать водород.
3. Способ по п. 1, в котором подложка содержит металлический сплав, и при этом модификация объема подложки содержит этап, на котором:
прикладывают электрический ток к, по меньшей мере, участку подложки, чтобы выполнять реакцию оксигенизации.
4. Способ по п. 3, в котором металлический сплав включает в себя алюминий или титан.
5. Способ по п. 1, в котором модификация объема подложки содержит этап, на котором подвергают подложку воздействию химиката на основе лития в процессе литирования.
6. Способ по п. 1, в котором подложка содержит полимер или эластомер, и в котором модификация объема подложки содержит этап, на котором подвергают подложку воздействию одного или более химикатов в процессе гидратации или процессе сольватации.
7. Способ по п. 1, в котором модификация объема подложки содержит этап, на котором:
применяют управляемую температуру, давление или напряжение к конкретным участкам подложки.
8. Способ по п. 1, в котором, перед модификацией объема подложки, подложка имеет первый профиль толщины, и в котором после модификации объема подложки подложка имеет второй профиль толщины, который отличается от первого профиля толщины.
9. Способ по п. 1, дополнительно содержащий этап, на котором размещают пресс-форму для формования рядом со второй поверхностью датчика изображений.
10. Устройство, содержащее
изогнутую микросхему датчика изображений, имеющую первую сторону и вторую сторону, противоположную первой стороне, при этом вторая сторона включает в себя световые датчики, чтобы формировать электрические сигналы в ответ на принимаемый свет; и
подложку, покрывающую первую сторону изогнутой микросхемы датчика изображений, при этом подложка содержит гидрогенизированный металл.
11. Устройство по п. 10, в котором вторая сторона изогнутой микросхемы датчика изображений имеет вогнутую сферическую или асферическую форму.
12. Устройство по п. 10, в котором гидрогенизированный металл содержит гидрид титана или гидрид ванадия.
13. Устройство по п. 10, в котором изогнутая микросхема датчика изображений имеет радиус искривления, который, по меньшей мере, приблизительно равен обратному фокусному расстоянию второй стороны изогнутой микросхемы датчика изображений.
14. Система, содержащая
одну или более линз или зеркал;
изогнутую микросхему датчика изображений, имеющую первую сторону и вторую сторону, противоположную первой стороне, при этом вторая сторона включает в себя световые датчики, чтобы формировать электрические сигналы в ответ на принимаемый свет от одной или более линз или зеркал; и
подложку, покрывающую первую сторону изогнутой микросхемы датчика изображений, при этом подложка содержит гидрогенизированный металл.
15. Система по п. 14, в которой подложка включает в себя маскированные области, которые, по меньшей мере, частично препятствуют абсорбции подложкой одного или более вздувающих химикатов.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/491,903 | 2014-09-19 | ||
US14/491,903 US9570488B2 (en) | 2014-09-19 | 2014-09-19 | Image sensor bending by induced substrate swelling |
PCT/US2015/049277 WO2016044040A1 (en) | 2014-09-19 | 2015-09-10 | Image sensor bending by induced substrate swelling |
Publications (1)
Publication Number | Publication Date |
---|---|
RU2017108847A true RU2017108847A (ru) | 2018-09-17 |
Family
ID=54199296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU2017108847A RU2017108847A (ru) | 2014-09-19 | 2015-09-10 | Изгибание датчика изображений посредством принудительного вздутия подложки |
Country Status (16)
Country | Link |
---|---|
US (2) | US9570488B2 (ru) |
EP (1) | EP3195360B1 (ru) |
JP (1) | JP2017531319A (ru) |
KR (1) | KR102444392B1 (ru) |
CN (1) | CN107078142B (ru) |
AU (1) | AU2015318206A1 (ru) |
BR (1) | BR112017003628A2 (ru) |
CA (1) | CA2961181A1 (ru) |
CL (1) | CL2017000648A1 (ru) |
CO (1) | CO2017002554A2 (ru) |
IL (1) | IL250482A0 (ru) |
MX (1) | MX2017003531A (ru) |
PH (1) | PH12017500248A1 (ru) |
RU (1) | RU2017108847A (ru) |
SG (1) | SG11201701827YA (ru) |
WO (1) | WO2016044040A1 (ru) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9570488B2 (en) | 2014-09-19 | 2017-02-14 | Microsoft Technology Licensing, Llc | Image sensor bending by induced substrate swelling |
US10373995B2 (en) | 2014-09-19 | 2019-08-06 | Microsoft Technology Licensing, Llc | Image sensor bending using tension |
CN104486555B (zh) * | 2014-10-28 | 2019-02-12 | 北京智谷睿拓技术服务有限公司 | 图像采集控制方法和装置 |
US11128786B2 (en) * | 2014-11-21 | 2021-09-21 | Apple Inc. | Bending a circuit-bearing die |
JP6463159B2 (ja) * | 2015-02-05 | 2019-01-30 | キヤノン株式会社 | 撮像装置およびその制御方法、プログラム、並びに記憶媒体 |
US10304900B2 (en) | 2015-04-02 | 2019-05-28 | Microsoft Technology Licensing, Llc | Bending semiconductor chip in molds having radially varying curvature |
US9870927B2 (en) | 2015-04-02 | 2018-01-16 | Microsoft Technology Licensing, Llc | Free-edge semiconductor chip bending |
US9893058B2 (en) * | 2015-09-17 | 2018-02-13 | Semiconductor Components Industries, Llc | Method of manufacturing a semiconductor device having reduced on-state resistance and structure |
KR102072666B1 (ko) * | 2016-01-26 | 2020-02-03 | 한국전자통신연구원 | 광 이미징 장치 |
US10062727B2 (en) | 2016-09-09 | 2018-08-28 | Microsoft Technology Licensing, Llc | Strain relieving die for curved image sensors |
US10361235B2 (en) * | 2016-11-23 | 2019-07-23 | Industrial Technology Research Institute | Image sensor |
FR3061990B1 (fr) * | 2017-01-18 | 2019-04-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de realisation collective de circuits electroniques courbes |
FR3073322B1 (fr) * | 2017-11-07 | 2021-12-03 | Commissariat Energie Atomique | Procede de realisation d'au moins un circuit electronique courbe |
CN107959781B (zh) * | 2017-12-11 | 2020-07-31 | 信利光电股份有限公司 | 一种摄像模组及其调整控制方法 |
US11848349B1 (en) | 2018-06-21 | 2023-12-19 | Hrl Laboratories, Llc | Curved semiconductor and method of forming the same |
US10418408B1 (en) * | 2018-06-22 | 2019-09-17 | Omnivision Technologies, Inc. | Curved image sensor using thermal plastic substrate material |
TWI660493B (zh) * | 2018-12-06 | 2019-05-21 | 財團法人工業技術研究院 | 影像感測器及其製造方法 |
KR102472973B1 (ko) * | 2019-09-24 | 2022-11-30 | 코어포토닉스 리미티드 | 슬림형 팝-아웃 카메라 및 이러한 카메라를 위한 렌즈 |
US11862653B2 (en) | 2020-04-02 | 2024-01-02 | Hrl Laboratories, Llc | Curved imaging sensor package with architected substrate |
Family Cites Families (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5514888A (en) | 1992-05-22 | 1996-05-07 | Matsushita Electronics Corp. | On-chip screen type solid state image sensor and manufacturing method thereof |
US5349443A (en) | 1992-11-25 | 1994-09-20 | Polaroid Corporation | Flexible transducers for photon tunneling microscopes and methods for making and using same |
JP2809215B2 (ja) | 1996-09-26 | 1998-10-08 | 日本電気株式会社 | 固体撮像カメラ |
JPH1174164A (ja) | 1997-08-27 | 1999-03-16 | Canon Inc | 基板処理装置、基板支持装置及び基板処理方法並びに基板の製造方法 |
US6255025B1 (en) * | 1998-07-13 | 2001-07-03 | Fuji Xerox Co., Ltd. | Filter and process for producing same |
US6312959B1 (en) | 1999-03-30 | 2001-11-06 | U.T. Battelle, Llc | Method using photo-induced and thermal bending of MEMS sensors |
US6706448B1 (en) * | 1999-08-30 | 2004-03-16 | Georgia Tech Research Corp. | Method and apparatus for lithiating alloys |
JP4604307B2 (ja) | 2000-01-27 | 2011-01-05 | ソニー株式会社 | 撮像装置とその製造方法及びカメラシステム |
US9314339B2 (en) * | 2000-03-27 | 2016-04-19 | Formae, Inc. | Implants for replacing cartilage, with negatively-charged hydrogel surfaces and flexible matrix reinforcement |
TWI313059B (ru) * | 2000-12-08 | 2009-08-01 | Sony Corporatio | |
DE10122324A1 (de) | 2001-05-08 | 2002-11-14 | Philips Corp Intellectual Pty | Flexible integrierte monolithische Schaltung |
US6791072B1 (en) | 2002-05-22 | 2004-09-14 | National Semiconductor Corporation | Method and apparatus for forming curved image sensor module |
US6881491B2 (en) * | 2003-05-16 | 2005-04-19 | Alcoa Inc. | Protective fluoride coatings for aluminum alloy articles |
JP4705748B2 (ja) * | 2003-05-30 | 2011-06-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2005278133A (ja) * | 2003-07-03 | 2005-10-06 | Fuji Photo Film Co Ltd | 固体撮像装置および光学機器 |
US20050035514A1 (en) | 2003-08-11 | 2005-02-17 | Supercritical Systems, Inc. | Vacuum chuck apparatus and method for holding a wafer during high pressure processing |
US7397066B2 (en) * | 2004-08-19 | 2008-07-08 | Micron Technology, Inc. | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers |
US7432596B1 (en) | 2004-10-12 | 2008-10-07 | Energy Innovations, Inc. | Apparatus and method for bonding silicon wafer to conductive substrate |
US7190039B2 (en) * | 2005-02-18 | 2007-03-13 | Micron Technology, Inc. | Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers |
US7683303B2 (en) | 2006-01-17 | 2010-03-23 | Sri International | Nanoscale volumetric imaging device having at least one microscale device for electrically coupling at least one addressable array to a data processing means |
US7507944B1 (en) | 2006-06-27 | 2009-03-24 | Cypress Semiconductor Corporation | Non-planar packaging of image sensor |
JP2008092532A (ja) | 2006-10-05 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 撮像装置とその製造方法および携帯電話装置 |
US7742090B2 (en) | 2006-12-22 | 2010-06-22 | Palo Alto Research Center Incorporated | Flexible segmented image sensor |
US7733397B2 (en) | 2006-12-22 | 2010-06-08 | Palo Alto Research Center Incorporated | Sensor surface with 3D curvature formed by electronics on a continuous 2D flexible substrate |
JP2009049499A (ja) | 2007-08-14 | 2009-03-05 | Fujifilm Corp | 半導体チップの実装方法及び半導体装置 |
KR101378418B1 (ko) | 2007-11-01 | 2014-03-27 | 삼성전자주식회사 | 이미지센서 모듈 및 그 제조방법 |
US8077235B2 (en) | 2008-01-22 | 2011-12-13 | Palo Alto Research Center Incorporated | Addressing of a three-dimensional, curved sensor or display back plane |
US8372726B2 (en) | 2008-10-07 | 2013-02-12 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
KR101567067B1 (ko) | 2008-12-02 | 2015-11-06 | 엘지이노텍 주식회사 | 카메라모듈 |
US20120159996A1 (en) * | 2010-12-28 | 2012-06-28 | Gary Edwin Sutton | Curved sensor formed from silicon fibers |
US8836805B2 (en) | 2012-07-17 | 2014-09-16 | Gary Edwin Sutton | Curved sensor system |
US8248499B2 (en) | 2009-02-23 | 2012-08-21 | Gary Edwin Sutton | Curvilinear sensor system |
WO2010098136A1 (ja) | 2009-02-27 | 2010-09-02 | Hoya株式会社 | レンズ用鋳型の製造方法および眼鏡レンズの製造方法 |
GB0915473D0 (en) | 2009-09-07 | 2009-10-07 | St Microelectronics Res & Dev | Improvements in or relating to CMOS sensors |
EP2494637A4 (en) * | 2009-10-29 | 2014-06-25 | Univ Leland Stanford Junior | DEVICES, SYSTEMS AND METHOD FOR ADVANCED RECHARGEABLE BATTERIES |
EP2388987A1 (en) | 2010-05-19 | 2011-11-23 | Thomson Licensing | Camera with volumetric sensor chip |
JP5724322B2 (ja) | 2010-11-24 | 2015-05-27 | ソニー株式会社 | 固体撮像装置の製造方法 |
WO2012097163A1 (en) | 2011-01-14 | 2012-07-19 | The Board Of Trustees Of The University Of Illinois | Optical component array having adjustable curvature |
US9228822B2 (en) | 2011-01-24 | 2016-01-05 | President And Fellows Of Harvard College | Non-differential elastomer curvature sensor |
US8878116B2 (en) | 2011-02-28 | 2014-11-04 | Sony Corporation | Method of manufacturing solid-state imaging element, solid-state imaging element and electronic apparatus |
JP5720304B2 (ja) | 2011-02-28 | 2015-05-20 | ソニー株式会社 | 固体撮像装置及び電子機器 |
JP5658189B2 (ja) * | 2011-03-21 | 2015-01-21 | ゲイリー・エドウィン・サットン | 曲面状センサーカメラを有する移動通信装置、移動型光学部を有する曲面状センサーカメラ、及びシリコン繊維で製作される曲面状センサー |
JP2012249003A (ja) | 2011-05-26 | 2012-12-13 | Toshiba Corp | 固体撮像装置、固体撮像装置の製造方法およびカメラモジュール |
US20150120661A1 (en) | 2012-04-04 | 2015-04-30 | Scribble Technologies Inc. | System and Method for Generating Digital Content |
FR2989518A1 (fr) | 2012-04-13 | 2013-10-18 | St Microelectronics Crolles 2 | Procede de fabrication d'un capteur d'image a surface courbe |
FR2989519A1 (fr) | 2012-04-13 | 2013-10-18 | St Microelectronics Crolles 2 | Procede de fabrication d'un capteur d'image a surface courbe. |
US10334181B2 (en) | 2012-08-20 | 2019-06-25 | Microsoft Technology Licensing, Llc | Dynamically curved sensor for optical zoom lens |
JP6135109B2 (ja) | 2012-12-07 | 2017-05-31 | ソニー株式会社 | 固体撮像素子および固体撮像素子の製造方法ならびに電子機器 |
JP2015070159A (ja) | 2013-09-30 | 2015-04-13 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
KR101557942B1 (ko) | 2014-01-08 | 2015-10-12 | 주식회사 루멘스 | 발광 소자 패키지 및 발광 소자 패키지의 제조 방법 |
US9551856B2 (en) | 2014-05-19 | 2017-01-24 | Google Inc. | MEMS-released curved image sensor |
US10373995B2 (en) | 2014-09-19 | 2019-08-06 | Microsoft Technology Licensing, Llc | Image sensor bending using tension |
US9570488B2 (en) | 2014-09-19 | 2017-02-14 | Microsoft Technology Licensing, Llc | Image sensor bending by induced substrate swelling |
US9349763B1 (en) | 2015-02-10 | 2016-05-24 | Omnivision Technologies, Inc. | Curved image sensor systems and methods for manufacturing the same |
US9998643B2 (en) | 2015-03-24 | 2018-06-12 | Semiconductor Components Industries, Llc | Methods of forming curved image sensors |
-
2014
- 2014-09-19 US US14/491,903 patent/US9570488B2/en active Active
-
2015
- 2015-09-10 CA CA2961181A patent/CA2961181A1/en not_active Abandoned
- 2015-09-10 JP JP2017515090A patent/JP2017531319A/ja active Pending
- 2015-09-10 MX MX2017003531A patent/MX2017003531A/es unknown
- 2015-09-10 SG SG11201701827YA patent/SG11201701827YA/en unknown
- 2015-09-10 AU AU2015318206A patent/AU2015318206A1/en not_active Abandoned
- 2015-09-10 CN CN201580050442.XA patent/CN107078142B/zh active Active
- 2015-09-10 WO PCT/US2015/049277 patent/WO2016044040A1/en active Application Filing
- 2015-09-10 RU RU2017108847A patent/RU2017108847A/ru not_active Application Discontinuation
- 2015-09-10 EP EP15770998.1A patent/EP3195360B1/en active Active
- 2015-09-10 KR KR1020177010521A patent/KR102444392B1/ko active IP Right Grant
- 2015-09-10 BR BR112017003628A patent/BR112017003628A2/pt not_active Application Discontinuation
-
2017
- 2017-01-04 US US15/398,266 patent/US9859314B2/en active Active
- 2017-02-07 IL IL250482A patent/IL250482A0/en unknown
- 2017-02-09 PH PH12017500248A patent/PH12017500248A1/en unknown
- 2017-03-16 CL CL2017000648A patent/CL2017000648A1/es unknown
- 2017-03-17 CO CONC2017/0002554A patent/CO2017002554A2/es unknown
Also Published As
Publication number | Publication date |
---|---|
KR102444392B1 (ko) | 2022-09-16 |
WO2016044040A1 (en) | 2016-03-24 |
IL250482A0 (en) | 2017-03-30 |
US20160086987A1 (en) | 2016-03-24 |
SG11201701827YA (en) | 2017-04-27 |
EP3195360A1 (en) | 2017-07-26 |
CA2961181A1 (en) | 2016-03-24 |
JP2017531319A (ja) | 2017-10-19 |
EP3195360B1 (en) | 2019-05-01 |
CO2017002554A2 (es) | 2017-06-20 |
CL2017000648A1 (es) | 2017-11-17 |
US9570488B2 (en) | 2017-02-14 |
US20170117311A1 (en) | 2017-04-27 |
KR20170056689A (ko) | 2017-05-23 |
CN107078142A (zh) | 2017-08-18 |
AU2015318206A1 (en) | 2017-03-16 |
US9859314B2 (en) | 2018-01-02 |
PH12017500248A1 (en) | 2017-07-03 |
CN107078142B (zh) | 2020-08-18 |
MX2017003531A (es) | 2017-06-21 |
BR112017003628A2 (pt) | 2017-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
RU2017108847A (ru) | Изгибание датчика изображений посредством принудительного вздутия подложки | |
JP2018064112A5 (ja) | 表示装置、電子機器、半導体装置の作製方法 | |
RU2017108537A (ru) | Изгибание датчика изображений с использованием растяжения | |
WO2016187457A3 (en) | Tilt shift iris imaging | |
WO2018052918A3 (en) | Visually-impaired-accessible building safety system | |
JP2015533224A5 (ru) | ||
WO2016022336A3 (en) | Systems and methods of machine vision assisted additive fabrication | |
MY202338A (en) | Method and apparatus for awakening application by means of mobile browser | |
RU2011135973A (ru) | Заготовка офтальмологической линзы | |
WO2016020750A3 (en) | Methods and apparatuses for measurement enhancement in communication system | |
WO2016092425A3 (en) | Solving ambiguity regarding source cell to fetch wireless device context for successful rrc connection reestablishment to target cell | |
WO2008002398A3 (en) | Water soluble ophthalmic lens mold | |
CN103852972A (zh) | 一种双焦点微透镜阵列的微米压印与激光诱导成形方法 | |
WO2015104635A3 (en) | Method and apparatus for performing continuous integration | |
WO2016059547A3 (en) | Method of manufacturing an object with microchannels provided therethrough | |
US9349765B2 (en) | Suspended lens system having a non-zero optical transmission substrate facing the concave surface of a single-piece lens and wafer-level method for manufacturing the same | |
EP3603782A4 (en) | POROUS MEMBRANE, MEMBRANE MODULE, WATER TREATMENT DEVICE AND METHOD FOR PRODUCING A POROUS MEMBRANE | |
EA201791623A1 (ru) | Способ изготовления пленки для выравнивания жидких кристаллов и устройство для осуществления реакции для изготовления указанной пленки | |
RU2016128419A (ru) | Создание прозрачного окна в защитной подложке для применений в печати с защитой от подделок | |
WO2017085648A3 (en) | 3d printiing | |
WO2020052376A3 (en) | Game rendering method and apparatus, and non-transitory computer-readable storage medium | |
EP3790093A4 (en) | ELECTROCHEMICAL MODULE, METHOD OF ASSEMBLING ELECTROCHEMICAL MODULE, ELECTROCHEMICAL DEVICE, AND ENERGY SYSTEM | |
EP3550349A4 (en) | LENS MODULE FOR IMAGING DEVICE AND METHOD FOR MANUFACTURING A LENS MODULE | |
EP3533813A4 (en) | GEL POLYMER ELECTROLYTE, METHOD FOR PRODUCING POLYMER GEL ELECTROLYTE, AND ELECTROCHROMIC DEVICE CONTAINING SAME | |
WO2008131268A3 (en) | Use of surfactants in extraction procedures for silicone hydrogel ophthalmic lenses |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FA93 | Acknowledgement of application withdrawn (no request for examination) |
Effective date: 20180911 |