RU2016119794A - Конструкция тонкопленочного солнечного модуля и способ ее изготовления - Google Patents
Конструкция тонкопленочного солнечного модуля и способ ее изготовления Download PDFInfo
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- RU2016119794A RU2016119794A RU2016119794A RU2016119794A RU2016119794A RU 2016119794 A RU2016119794 A RU 2016119794A RU 2016119794 A RU2016119794 A RU 2016119794A RU 2016119794 A RU2016119794 A RU 2016119794A RU 2016119794 A RU2016119794 A RU 2016119794A
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- layer
- silicon
- oxide
- stoichiometric
- amorphous
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- 238000000034 method Methods 0.000 title claims 4
- 239000010409 thin film Substances 0.000 title claims 3
- 238000004519 manufacturing process Methods 0.000 title claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 4
- 239000011521 glass Substances 0.000 claims 4
- 239000011159 matrix material Substances 0.000 claims 4
- 239000005543 nano-size silicon particle Substances 0.000 claims 4
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 claims 4
- 229910000077 silane Inorganic materials 0.000 claims 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 2
- 150000003376 silicon Chemical class 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 2
- 229910001887 tin oxide Inorganic materials 0.000 claims 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 238000005234 chemical deposition Methods 0.000 claims 1
- 238000010276 construction Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000013081 microcrystal Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 claims 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Claims (18)
1. Конструкция тонкопленочного солнечного модуля, состоящая из последовательно расположенных:
- фронтальной стеклянной подложки;
- фронтального контактного слоя из прозрачного проводящего оксида;
- подслоя нестехиометрического карбида кремния р-типа;
- аморфного и микрокристаллического каскадов, соединенных последовательно, при этом аморфный каскад состоит из р-слоя на основе слоя наночастиц кремния в матрице гидрогенизированного нестехиометрического оксида кремния легированного бором (nc-Si/SiOx:H), собственного слоя на основе аморфного гидрогенизированного кремния (a-Si:H) и n-слоя на основе слоя наночастиц кремния в матрице гидрогенизированного нестехиометрического оксида кремния легированного фосфором (nc-Si/SiOx:H), а микрокристаллический каскад состоит из pin структуры на основе микрокристаллического кремния (uс-Si:H);
- тыльного контактного слоя;
- продольных и поперечных электрических контактных шин;
- тыльного отражателя выполняющего герметизирующую функцию, установленного вместе с тыльным стеклом;
- коммутационной коробки.
2. Конструкция по п. 1, отличающаяся тем, что фронтальный контактный слой из прозрачного проводящего оксида и тыльный контактный слой выполнены из оксида цинка или оксида олова.
3. Способ изготовления конструкции тонкопленочного солнечного модуля, включающий
- нанесение на фронтальную стеклянную подложку слоя прозрачного проводящего оксида;
- нанесение подслоя нестехиометрического карбида кремния методом плазмохимического осаждения из газовой фазы с добавлением в состав силан-водородной плазмы метана;
- на подслой методом плазмохимического осаждения из газовой фазы нанесен аморфный каскад, состоящий из слоя наночастиц кремния в матрице гидрогенизированного нестехиометрического оксида кремния р-типа легированного бором (nc-Si/SiOx:H), выполняющего роль входного широкозонного окна, слоя на основе аморфного гидрогенизированного кремния (a-Si:H), слоя наночастиц кремния в матрице гидрогенизированного нестехиометрического оксида кремния n-типа легированного фосфором (nc-Si/SiOx:H), выполняющего роль промежуточного отражателя;
- на слой аморфного каскада нанесен слой микрокристаллического каскада, нанесен тыльный контактный слой, после чего нанесены продольные и поперечные электрические шины, поверх которых нанесен тыльный отражатель, выполняющий герметизирующую функцию, на который установлено тыльное стекло и коммутационная коробка.
4. Способ по п. 3, отличающийся тем, что в состав силановой плазмы при плазмохимическом осаждении, при нанесении слоя р-типа, введен углекислый газ в соотношении к силану 1 к 1, водород в соотношении к силану 1 к 300 и триметилбор в соотношении к силану 6 к 1000.
5. Способ по п. 3, отличающийся тем, что фронтальный контактный слой из прозрачного проводящего оксида и тыльный контактный слой выполнены из оксида цинка или оксида олова.
6. Способ по п. 3, отличающийся тем, что после нанесения слоя прозрачного проводящего оксида, слоя микрокристаллического каскада и тыльного контактного слоя выполняют скрайбирование слоев на отдельные элементы и изоляцию по периметру.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2016119794A RU2648341C2 (ru) | 2016-05-23 | 2016-05-23 | Конструкция тонкопленочного солнечного модуля и способ ее изготовления |
| PCT/RU2016/000384 WO2017204676A1 (ru) | 2016-05-23 | 2016-06-23 | Конструкция тонкопленочного солнечного модуля и способ ее изготовления |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2016119794A RU2648341C2 (ru) | 2016-05-23 | 2016-05-23 | Конструкция тонкопленочного солнечного модуля и способ ее изготовления |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2016119794A true RU2016119794A (ru) | 2017-11-28 |
| RU2648341C2 RU2648341C2 (ru) | 2018-03-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2016119794A RU2648341C2 (ru) | 2016-05-23 | 2016-05-23 | Конструкция тонкопленочного солнечного модуля и способ ее изготовления |
Country Status (2)
| Country | Link |
|---|---|
| RU (1) | RU2648341C2 (ru) |
| WO (1) | WO2017204676A1 (ru) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2715088C1 (ru) * | 2019-03-14 | 2020-02-25 | Общество С Ограниченной Ответственностью "Нтц Тонкопленочных Технологий В Энергетике" | Способ изготовления тонкопленочного солнечного модуля с скрайбированием слоев |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7667133B2 (en) * | 2003-10-29 | 2010-02-23 | The University Of Toledo | Hybrid window layer for photovoltaic cells |
| US10164135B2 (en) * | 2009-08-07 | 2018-12-25 | Guardian Glass, LLC | Electronic device including graphene-based layer(s), and/or method or making the same |
| TW201334211A (zh) * | 2012-01-04 | 2013-08-16 | Tel Solar Ag | 薄膜太陽能電池的中間反射結構 |
-
2016
- 2016-05-23 RU RU2016119794A patent/RU2648341C2/ru not_active IP Right Cessation
- 2016-06-23 WO PCT/RU2016/000384 patent/WO2017204676A1/ru active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| RU2648341C2 (ru) | 2018-03-23 |
| WO2017204676A1 (ru) | 2017-11-30 |
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Effective date: 20180524 |