RU2015121968A - Подзонное инфракрасное облучение для кристаллов детекторов - Google Patents
Подзонное инфракрасное облучение для кристаллов детекторов Download PDFInfo
- Publication number
- RU2015121968A RU2015121968A RU2015121968A RU2015121968A RU2015121968A RU 2015121968 A RU2015121968 A RU 2015121968A RU 2015121968 A RU2015121968 A RU 2015121968A RU 2015121968 A RU2015121968 A RU 2015121968A RU 2015121968 A RU2015121968 A RU 2015121968A
- Authority
- RU
- Russia
- Prior art keywords
- semiconductor layer
- infrared
- directly converting
- radiation
- sources
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims 4
- 230000005855 radiation Effects 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 14
- 238000000034 method Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000001131 transforming effect Effects 0.000 claims 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261724317P | 2012-11-09 | 2012-11-09 | |
| US61/724,317 | 2012-11-09 | ||
| PCT/IB2013/059990 WO2014072939A1 (en) | 2012-11-09 | 2013-11-08 | Sub-band infra-red irradiation for detector crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| RU2015121968A true RU2015121968A (ru) | 2017-01-10 |
Family
ID=49713431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2015121968A RU2015121968A (ru) | 2012-11-09 | 2013-11-08 | Подзонное инфракрасное облучение для кристаллов детекторов |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9664558B2 (en:Method) |
| EP (1) | EP2917766B1 (en:Method) |
| JP (1) | JP6310471B2 (en:Method) |
| CN (1) | CN104781695B (en:Method) |
| BR (1) | BR112015010277A2 (en:Method) |
| RU (1) | RU2015121968A (en:Method) |
| WO (1) | WO2014072939A1 (en:Method) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9753157B2 (en) | 2014-09-26 | 2017-09-05 | Koninklijke Philips N.V. | Radiation detector with heating device |
| US9571765B2 (en) | 2015-06-25 | 2017-02-14 | General Electric Company | Universal four-side buttable digital CMOS imager |
| EP3320375B1 (en) | 2015-07-09 | 2019-02-06 | Koninklijke Philips N.V. | Direct conversion radiation detector |
| WO2017067817A1 (en) | 2015-10-20 | 2017-04-27 | Koninklijke Philips N.V. | Polarization correction for direct conversion x-ray detectors |
| DE102015220793A1 (de) * | 2015-10-23 | 2017-04-27 | Siemens Healthcare Gmbh | Röntgendetektor und/oder Gammadetektor mit Lichtbias |
| US9588240B1 (en) | 2015-10-27 | 2017-03-07 | General Electric Company | Digital readout architecture for four side buttable digital X-ray detector |
| US10283557B2 (en) | 2015-12-31 | 2019-05-07 | General Electric Company | Radiation detector assembly |
| US10686003B2 (en) | 2015-12-31 | 2020-06-16 | General Electric Company | Radiation detector assembly |
| DE102016210935B4 (de) * | 2016-06-20 | 2020-07-09 | Siemens Healthcare Gmbh | Röntgendetektor mit intransparenter Zwischenschicht |
| CN109690355B (zh) * | 2016-09-23 | 2022-10-21 | 深圳帧观德芯科技有限公司 | 具有多层半导体x射线检测器的系统 |
| EP3422051A1 (en) | 2017-06-28 | 2019-01-02 | Koninklijke Philips N.V. | Direct conversion radiation detection |
| WO2020010593A1 (en) * | 2018-07-12 | 2020-01-16 | Shenzhen Xpectvision Technology Co., Ltd. | Methods of making a radiation detector |
| EP3605151A1 (en) * | 2018-08-01 | 2020-02-05 | Koninklijke Philips N.V. | Photon counting detector |
| DE102018219061A1 (de) * | 2018-10-25 | 2020-04-30 | Redlen Technologies, Inc. | Röntgen-zu-infrarot-umwandlungsstrukturen zum beleuchten von röntgendetektoren mit infrarotlicht für verbesserte leistung |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61223689A (ja) * | 1985-03-29 | 1986-10-04 | Shimadzu Corp | 半導体放射線位置検出装置 |
| JP2564979B2 (ja) * | 1990-09-26 | 1996-12-18 | 株式会社島津製作所 | 放射線検出器 |
| US5677539A (en) | 1995-10-13 | 1997-10-14 | Digirad | Semiconductor radiation detector with enhanced charge collection |
| DE19616545B4 (de) | 1996-04-25 | 2006-05-11 | Siemens Ag | Schneller Strahlungsdetektor |
| JP4150079B2 (ja) * | 1996-07-08 | 2008-09-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体ｘ線検出器を有するｘ線検査装置 |
| US6373064B1 (en) * | 1998-10-02 | 2002-04-16 | Sandia Corporation | Semiconductor radiation spectrometer |
| DE10132924A1 (de) * | 2001-07-06 | 2003-01-16 | Philips Corp Intellectual Pty | Flacher dynamischer Strahlungsdetektor |
| JP4211435B2 (ja) * | 2002-08-30 | 2009-01-21 | 株式会社島津製作所 | 放射線検出器 |
| US7223981B1 (en) * | 2002-12-04 | 2007-05-29 | Aguila Technologies Inc. | Gamma ray detector modules |
| EP1583985B1 (en) * | 2003-01-06 | 2017-02-22 | Koninklijke Philips N.V. | Radiation detector with shielded electronics for computed tomography |
| WO2004095067A1 (en) | 2003-04-24 | 2004-11-04 | Philips Intellectual Property & Standards Gmbh | X-ray detector element |
| JP2005024368A (ja) * | 2003-07-01 | 2005-01-27 | Fuji Photo Film Co Ltd | 放射線画像検出器の残像消去方法および装置 |
| DE102005037898B3 (de) * | 2005-08-10 | 2007-04-12 | Siemens Ag | Festkörperdetektor bzw. Verfahren zur Rücksetzung von Restladungen durch Beleuchtung bei einem Festkörperdetektor |
| US7652258B2 (en) * | 2007-01-08 | 2010-01-26 | Orbotech Medical Solutions Ltd. | Method, apparatus, and system of reducing polarization in radiation detectors |
| EP2088451B1 (en) * | 2008-02-05 | 2016-01-06 | PANalytical B.V. | Imaging detector |
| US20100078558A1 (en) * | 2008-09-26 | 2010-04-01 | Michael Prokesch | Infra-red light stimulated cdZnTe spectroscopic semiconductor x-ray and gamma-ray radiation detector |
| DE102010015422B4 (de) * | 2010-04-19 | 2013-04-18 | Siemens Aktiengesellschaft | Röntgendetektor mit einer direkt konvertierenden Halbleiterschicht und Kalibrierverfahren für einen solchen Röntgendetektor |
| KR101761817B1 (ko) * | 2011-03-04 | 2017-07-26 | 삼성전자주식회사 | 대면적 엑스선 검출기 |
| US8927937B2 (en) * | 2011-05-11 | 2015-01-06 | Koninklijke Philips N.V. | Ionizing radiation detection |
| DE102012213404B3 (de) * | 2012-07-31 | 2014-01-23 | Siemens Aktiengesellschaft | Verfahren zur Temperaturstabilisierung, Röntgenstrahlungsdetektor und CT-System |
-
2013
- 2013-11-08 CN CN201380058602.6A patent/CN104781695B/zh active Active
- 2013-11-08 WO PCT/IB2013/059990 patent/WO2014072939A1/en not_active Ceased
- 2013-11-08 US US14/440,609 patent/US9664558B2/en active Active
- 2013-11-08 JP JP2015541280A patent/JP6310471B2/ja active Active
- 2013-11-08 RU RU2015121968A patent/RU2015121968A/ru not_active Application Discontinuation
- 2013-11-08 EP EP13799686.4A patent/EP2917766B1/en active Active
- 2013-11-08 BR BR112015010277A patent/BR112015010277A2/pt not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US9664558B2 (en) | 2017-05-30 |
| JP6310471B2 (ja) | 2018-04-11 |
| US20150285676A1 (en) | 2015-10-08 |
| EP2917766A1 (en) | 2015-09-16 |
| EP2917766B1 (en) | 2019-11-06 |
| CN104781695B (zh) | 2019-06-28 |
| BR112015010277A2 (pt) | 2017-07-11 |
| JP2016504567A (ja) | 2016-02-12 |
| CN104781695A (zh) | 2015-07-15 |
| WO2014072939A1 (en) | 2014-05-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FA94 | Acknowledgement of application withdrawn (non-payment of fees) |
Effective date: 20180724 |