RU2010107241A - Светоизлучающий прибор, включающий в себя фотонный кристалл и люминесцентную керамику - Google Patents

Светоизлучающий прибор, включающий в себя фотонный кристалл и люминесцентную керамику Download PDF

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RU2010107241A
RU2010107241A RU2010107241/28A RU2010107241A RU2010107241A RU 2010107241 A RU2010107241 A RU 2010107241A RU 2010107241/28 A RU2010107241/28 A RU 2010107241/28A RU 2010107241 A RU2010107241 A RU 2010107241A RU 2010107241 A RU2010107241 A RU 2010107241A
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semiconductor structure
ceramic layer
light
optical shutter
refractive index
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RU2010107241/28A
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RU2479072C2 (ru
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МЛ Джонатан Дж. ВЬЕРЕР (US)
МЛ Джонатан Дж. ВЬЕРЕР
Серж БИРХЭЙЗЕН (US)
Серж БИРХЭЙЗЕН
Орельен Дж. Ф. ДЭВИД (US)
Орельен Дж. Ф. ДЭВИД
Майкл Р. КРЕЙМС (US)
Майкл Р. КРЕЙМС
Ричард Дж. ВАЙСС (US)
Ричард Дж. ВАЙСС
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ФИЛИПС ЛЬЮМИЛДЗ ЛАЙТИНГ КОМПАНИ, ЭлЭлСи (US)
ФИЛИПС ЛЬЮМИЛДЗ ЛАЙТИНГ КОМПАНИ, ЭлЭлСи
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  • Semiconductor Lasers (AREA)

Abstract

1. Прибор, содержащий: ! полупроводниковую структуру, содержащую: ! светоизлучающий слой, расположенный между областью n-типа и областью p-типа; и ! изменение показателя преломления, образованное внутри или на поверхности полупроводниковой структуры, при этом изменение показателя преломления представляет собой фотонный кристалл; и ! керамический слой, расположенный на пути света, излучаемого светоизлучающим слоем, при этом керамический слой содержит преобразующий длину волны материал. ! 2. Прибор по п.1, в котором керамический слой содержит жесткий агломерат люминофорных частиц. ! 3. Прибор по п.1, в котором суммарная толщина полупроводниковых слоев в приборе составляет меньше, чем около 1 мкм. ! 4. Прибор по п.1, в котором поверхность керамического слоя является текстурированной. ! 5. Прибор по п.1, дополнительно содержащий основную подложку, при этом полупроводниковая структура присоединена к основной подложке, и керамический слой расположен вблизи поверхности полупроводниковой структуры по другую сторону основной подложки. ! 6. Прибор по п.1, дополнительно содержащий оптический затвор, расположенный между полупроводниковой структурой и керамическим слоем. ! 7. Прибор по п.6, в котором оптический затвор содержит одно из диэлектрической стопы, распределенного брэгговского отражателя, дихроичного фильтра, двумерного фотонного кристалла и трехмерного фотонного кристалла. ! 8. Прибор по п.6, в котором изменение показателя преломления выполнено с возможностью излучения света в заданном угловом профиле излучения, и в котором оптический затвор выполнен с возможностью пропускания большей части света, излучаемого в зад

Claims (14)

1. Прибор, содержащий:
полупроводниковую структуру, содержащую:
светоизлучающий слой, расположенный между областью n-типа и областью p-типа; и
изменение показателя преломления, образованное внутри или на поверхности полупроводниковой структуры, при этом изменение показателя преломления представляет собой фотонный кристалл; и
керамический слой, расположенный на пути света, излучаемого светоизлучающим слоем, при этом керамический слой содержит преобразующий длину волны материал.
2. Прибор по п.1, в котором керамический слой содержит жесткий агломерат люминофорных частиц.
3. Прибор по п.1, в котором суммарная толщина полупроводниковых слоев в приборе составляет меньше, чем около 1 мкм.
4. Прибор по п.1, в котором поверхность керамического слоя является текстурированной.
5. Прибор по п.1, дополнительно содержащий основную подложку, при этом полупроводниковая структура присоединена к основной подложке, и керамический слой расположен вблизи поверхности полупроводниковой структуры по другую сторону основной подложки.
6. Прибор по п.1, дополнительно содержащий оптический затвор, расположенный между полупроводниковой структурой и керамическим слоем.
7. Прибор по п.6, в котором оптический затвор содержит одно из диэлектрической стопы, распределенного брэгговского отражателя, дихроичного фильтра, двумерного фотонного кристалла и трехмерного фотонного кристалла.
8. Прибор по п.6, в котором изменение показателя преломления выполнено с возможностью излучения света в заданном угловом профиле излучения, и в котором оптический затвор выполнен с возможностью пропускания большей части света, излучаемого в заданном профиле излучения и падающего на оптический затвор.
9. Прибор по п.8, в котором больше, чем 60% света, покидающего полупроводниковую структуру, излучается в конус 45° от нормали к основной поверхности полупроводниковой структуры, и больше, чем 90% света, излучаемого в конус 45°, пропускается оптическим затвором.
10. Прибор по п.9, в котором меньше, чем 10% света, излучаемого керамикой, пропускается оптическим затвором.
11. Прибор по п.1, дополнительно содержащий диэлектрический концентратор, расположенный на пути света, излучаемого светоизлучающим слоем.
12. Прибор по п.11, в котором диэлектрический концентратор представляет собой стеклянную линзу.
13. Прибор по п.11, в котором изменение показателя преломления выполнено с возможностью излучения света в заданном угловом профиле излучения, и в котором диэлектрический концентратор выполнен так, что большая часть света, излучаемого в заданном профиле излучения, излучается в диэлектрический концентратор.
14. Прибор по п.1, дополнительно содержащий отражающий слой, при этом керамический слой расположен между отражающим слоем и полупроводниковой структурой.
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JP2010534931A (ja) 2010-11-11
US20120074448A1 (en) 2012-03-29
JP5746505B2 (ja) 2015-07-08
CN101821862A (zh) 2010-09-01
EP2176892A1 (en) 2010-04-21
TWI481066B (zh) 2015-04-11
RU2479072C2 (ru) 2013-04-10
US20070267646A1 (en) 2007-11-22
TW200913328A (en) 2009-03-16
BRPI0814324A2 (pt) 2015-01-20
KR20100052504A (ko) 2010-05-19
WO2009016529A1 (en) 2009-02-05
CN101821862B (zh) 2013-07-03

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