PL95739B1 - Urzadzenie do beztyglowego topienia strefowego preta polprzewodnikowego - Google Patents
Urzadzenie do beztyglowego topienia strefowego preta polprzewodnikowego Download PDFInfo
- Publication number
- PL95739B1 PL95739B1 PL1974175723A PL17572374A PL95739B1 PL 95739 B1 PL95739 B1 PL 95739B1 PL 1974175723 A PL1974175723 A PL 1974175723A PL 17572374 A PL17572374 A PL 17572374A PL 95739 B1 PL95739 B1 PL 95739B1
- Authority
- PL
- Poland
- Prior art keywords
- rod
- funnel
- sleeve
- preta
- shaped
- Prior art date
Links
- 230000008018 melting Effects 0.000 title claims 5
- 238000002844 melting Methods 0.000 title claims 5
- 238000004857 zone melting Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 239000006004 Quartz sand Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910000831 Steel Inorganic materials 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000012856 packing Methods 0.000 claims 1
- 230000008023 solidification Effects 0.000 claims 1
- 238000007711 solidification Methods 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 241000899793 Hypsophrys nicaraguensis Species 0.000 description 4
- 239000000463 material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/285—Crystal holders, e.g. chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Engine Equipment That Uses Special Cycles (AREA)
Claims (2)
1. Zastrzezenia patentowe ii. Urzadzenie do beztyglowego topienia strefo¬ wego preta pólprzewodnikowego, w którym do dolniego konca preta pólprzewodnikowego jest przetopiony monokrystaliczny zarodek krysztalu i pret pólprzewodnikowy jest zamocowany' na obu koncach, a po ponownym skrzepnieciu zostaje dodatkowo podparty od strony zarodka w pew¬ nej odleglosci od strefy topienia, znamienne tym, 5 ze ma osiowo przesuwalna i obracalna lejkowata tuleje (7) do zamocowania preta pólprzewodnitoowe- go (4), polaczona z elementem mocujacym (3) zaro¬ dek krysztalu (2), która w siwym najwyzszymi po¬ lozeniu obejmuje czesc stozkowa preta (4) powyzej 10 zarodka krysztalu (2) przy czym tuleja posiada srodki mocujace (4) czesc stozkowa preta. 2. Urzadzenie wedlug zastrz. 1, znamienne tym, ze srodek mocujacy pret (4) w lejkowatej tulei (7) stanowi piasek kwarcowy (13,) korzystnie ziarni- 15 sty krzem. 3. Urzadzenie wedlug zastrz. 1, znamienne tym, ze srodek mocujacy pret (4) w lejkowatej tulei (7) stanowi zakrzepniety plynny metal, korzystnie 20 'olów lub ind. 4. Urzadzenie wedlug zastrz. 1, znamienne tym, ze srodek mocujacy pret (4) w lejkowatej tulei stanowia kulki metalowe o jak najwiekszym upa¬ kowaniu. 25 5. Urzadzenie wedlug zastrz. 1, znamienne tym; ze na górnej krawedzi lejkowatej Itulei (7) umiesz¬ czone sa wkladki (15) z najczystszego metalu, dla utworzenia po stopieniu czescia stozkowa preta (4) stopu ó skladzie eultektyku, tworzacego mocnie po- 30 laczenie. 6. Urzadzenie wedlug zastrz. 5, znamienne tym, ze wkladki (15) stanowia wkladki glinowe. 7. Urzadzenie wedlug zastrz. 1 albo 5, znamienne tym, ze lejkowata tuleja (7) jest umieszczana wy¬ soko przy zamocowaniu, przy czym przesuwajaca sie strefa topienia preta (4) jest oddalona o co najmniej 10 cm od najwyzszego polozenia lejko¬ watej tulei. 40 8. Urzadzenie wedlug zastrz. 7, znamienne tym, ze posiada element (14) wprowadzajacy srodki mo¬ cujace pret (4) do lejkowatej tulei (7). 0. Urzadzenie wedlug zastrz. 1, znamienne tym, ze lejkowata tuleje (7) stanowi tuleja z tytanu 45 lub stali albo z krzemu lub grafitu. 3595739 Fig.1 Fig.
2. Fig.3 \cv&m_—^^ DN-3, zam. 1025/77 Cena 45 zl PL
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2358300A DE2358300C3 (de) | 1973-11-22 | 1973-11-22 | Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL95739B1 true PL95739B1 (pl) | 1977-11-30 |
Family
ID=5898815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL1974175723A PL95739B1 (pl) | 1973-11-22 | 1974-11-18 | Urzadzenie do beztyglowego topienia strefowego preta polprzewodnikowego |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US3923468A (pl) |
| JP (1) | JPS5337803B2 (pl) |
| BE (1) | BE816506A (pl) |
| CA (1) | CA1053545A (pl) |
| DE (1) | DE2358300C3 (pl) |
| IT (1) | IT1025571B (pl) |
| PL (1) | PL95739B1 (pl) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4045278A (en) * | 1973-11-22 | 1977-08-30 | Siemens Aktiengesellschaft | Method and apparatus for floating melt zone of semiconductor crystal rods |
| DE2455173C3 (de) * | 1974-11-21 | 1979-01-18 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum senkrechten Haltern des den Keimkristall enthaltenden Stabendes beim tiegelfreien Zonenschmelzen |
| DE2529366A1 (de) * | 1975-07-01 | 1977-01-20 | Wacker Chemitronic | Vorrichtung zum stuetzen eines kristallinen stabes |
| DE2652199C3 (de) * | 1976-11-16 | 1982-05-19 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Vorrichtung zum Abstützen des Kristallstabes beim tiegelfreien Zonenziehen |
| JP3376877B2 (ja) * | 1997-09-02 | 2003-02-10 | 信越半導体株式会社 | 種結晶保持具 |
| DE112017004008B4 (de) | 2016-08-10 | 2021-08-26 | Sumco Corporation | Einkristall-Herstellungsverfahren und Vorrichtung |
| CN112429282B (zh) * | 2020-11-10 | 2022-04-12 | 常州嘉业智能装备科技有限公司 | 一种用于多次灌装的漏斗 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2989378A (en) * | 1956-10-16 | 1961-06-20 | Int Standard Electric Corp | Producing silicon of high purity |
| GB848382A (en) * | 1957-11-28 | 1960-09-14 | Siemens Ag | Improvements in or relating to the production of mono-crystalline bodies |
| NL126240C (pl) * | 1958-02-19 | |||
| BE581195A (pl) * | 1958-07-30 | |||
| US3134700A (en) * | 1959-04-22 | 1964-05-26 | Siemens Ag | Dislocation removal by a last pass starting at a location displaced from the original seed into the grown crystal |
| US3179593A (en) * | 1960-09-28 | 1965-04-20 | Siemens Ag | Method for producing monocrystalline semiconductor material |
| NL260045A (pl) * | 1961-01-13 | |||
| US3159408A (en) * | 1961-10-05 | 1964-12-01 | Grace W R & Co | Chuck |
| BE626374A (pl) * | 1961-12-22 | |||
| DE1519901A1 (de) * | 1966-09-23 | 1970-02-12 | Siemens Ag | Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes |
| DE1619993A1 (de) * | 1967-03-03 | 1971-07-01 | Siemens Ag | Verfahren zum Zuechten eines stabfoermigen Einkristalls aus Halbleitermaterial durch tiegelfreies Zonenschmelzen |
| US3494742A (en) * | 1968-12-23 | 1970-02-10 | Western Electric Co | Apparatus for float zone melting fusible material |
| DE2059360A1 (de) * | 1970-12-02 | 1972-06-08 | Siemens Ag | Verfahren zum Herstellen homogener Staeben aus Halbleitermaterial |
-
1973
- 1973-11-22 DE DE2358300A patent/DE2358300C3/de not_active Expired
-
1974
- 1974-06-18 BE BE145571A patent/BE816506A/xx unknown
- 1974-10-21 JP JP12128774A patent/JPS5337803B2/ja not_active Expired
- 1974-11-11 IT IT29278/74A patent/IT1025571B/it active
- 1974-11-18 PL PL1974175723A patent/PL95739B1/pl unknown
- 1974-11-20 US US525641A patent/US3923468A/en not_active Expired - Lifetime
- 1974-11-21 CA CA214,337A patent/CA1053545A/en not_active Expired
-
1977
- 1977-03-17 US US05/778,587 patent/USRE30863E/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| BE816506A (fr) | 1974-10-16 |
| DE2358300C3 (de) | 1978-07-20 |
| CA1053545A (en) | 1979-05-01 |
| USRE30863E (en) | 1982-02-09 |
| JPS5337803B2 (pl) | 1978-10-12 |
| DE2358300A1 (de) | 1975-06-05 |
| IT1025571B (it) | 1978-08-30 |
| DE2358300B2 (de) | 1977-12-01 |
| JPS5084171A (pl) | 1975-07-07 |
| US3923468A (en) | 1975-12-02 |
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