IT1025571B - Dispositivo per la fusione a zone senza crogiuolo di una bacchetta cristallina semiconduttrice - Google Patents

Dispositivo per la fusione a zone senza crogiuolo di una bacchetta cristallina semiconduttrice

Info

Publication number
IT1025571B
IT1025571B IT29278/74A IT2927874A IT1025571B IT 1025571 B IT1025571 B IT 1025571B IT 29278/74 A IT29278/74 A IT 29278/74A IT 2927874 A IT2927874 A IT 2927874A IT 1025571 B IT1025571 B IT 1025571B
Authority
IT
Italy
Prior art keywords
wand
crucible
zone fusion
semiconductive crystalline
semiconductive
Prior art date
Application number
IT29278/74A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1025571B publication Critical patent/IT1025571B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/285—Crystal holders, e.g. chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Engine Equipment That Uses Special Cycles (AREA)
IT29278/74A 1973-11-22 1974-11-11 Dispositivo per la fusione a zone senza crogiuolo di una bacchetta cristallina semiconduttrice IT1025571B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2358300A DE2358300C3 (de) 1973-11-22 1973-11-22 Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen

Publications (1)

Publication Number Publication Date
IT1025571B true IT1025571B (it) 1978-08-30

Family

ID=5898815

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29278/74A IT1025571B (it) 1973-11-22 1974-11-11 Dispositivo per la fusione a zone senza crogiuolo di una bacchetta cristallina semiconduttrice

Country Status (7)

Country Link
US (2) US3923468A (it)
JP (1) JPS5337803B2 (it)
BE (1) BE816506A (it)
CA (1) CA1053545A (it)
DE (1) DE2358300C3 (it)
IT (1) IT1025571B (it)
PL (1) PL95739B1 (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045278A (en) * 1973-11-22 1977-08-30 Siemens Aktiengesellschaft Method and apparatus for floating melt zone of semiconductor crystal rods
DE2455173C3 (de) * 1974-11-21 1979-01-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum senkrechten Haltern des den Keimkristall enthaltenden Stabendes beim tiegelfreien Zonenschmelzen
DE2529366A1 (de) * 1975-07-01 1977-01-20 Wacker Chemitronic Vorrichtung zum stuetzen eines kristallinen stabes
DE2652199C3 (de) * 1976-11-16 1982-05-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Abstützen des Kristallstabes beim tiegelfreien Zonenziehen
JP3376877B2 (ja) * 1997-09-02 2003-02-10 信越半導体株式会社 種結晶保持具
WO2018030042A1 (ja) 2016-08-10 2018-02-15 株式会社Sumco 単結晶の製造方法及び装置
CN112429282B (zh) * 2020-11-10 2022-04-12 常州嘉业智能装备科技有限公司 一种用于多次灌装的漏斗

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2989378A (en) * 1956-10-16 1961-06-20 Int Standard Electric Corp Producing silicon of high purity
GB848382A (en) * 1957-11-28 1960-09-14 Siemens Ag Improvements in or relating to the production of mono-crystalline bodies
NL235481A (it) * 1958-02-19
BE581195A (it) * 1958-07-30
US3134700A (en) * 1959-04-22 1964-05-26 Siemens Ag Dislocation removal by a last pass starting at a location displaced from the original seed into the grown crystal
US3179593A (en) * 1960-09-28 1965-04-20 Siemens Ag Method for producing monocrystalline semiconductor material
NL260045A (it) * 1961-01-13
US3159408A (en) * 1961-10-05 1964-12-01 Grace W R & Co Chuck
BE626374A (it) * 1961-12-22
DE1519901A1 (de) * 1966-09-23 1970-02-12 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes
DE1619993A1 (de) * 1967-03-03 1971-07-01 Siemens Ag Verfahren zum Zuechten eines stabfoermigen Einkristalls aus Halbleitermaterial durch tiegelfreies Zonenschmelzen
US3494742A (en) * 1968-12-23 1970-02-10 Western Electric Co Apparatus for float zone melting fusible material
DE2059360A1 (de) * 1970-12-02 1972-06-08 Siemens Ag Verfahren zum Herstellen homogener Staeben aus Halbleitermaterial

Also Published As

Publication number Publication date
USRE30863E (en) 1982-02-09
DE2358300C3 (de) 1978-07-20
CA1053545A (en) 1979-05-01
DE2358300B2 (de) 1977-12-01
JPS5084171A (it) 1975-07-07
BE816506A (fr) 1974-10-16
US3923468A (en) 1975-12-02
JPS5337803B2 (it) 1978-10-12
PL95739B1 (pl) 1977-11-30
DE2358300A1 (de) 1975-06-05

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