PL449555A1 - Design of the top electrical contact and emitter arrangement in a one-dimensional 20-element array of 20 W edge-cut semiconductor lasers - Google Patents
Design of the top electrical contact and emitter arrangement in a one-dimensional 20-element array of 20 W edge-cut semiconductor lasersInfo
- Publication number
- PL449555A1 PL449555A1 PL449555A PL44955524A PL449555A1 PL 449555 A1 PL449555 A1 PL 449555A1 PL 449555 A PL449555 A PL 449555A PL 44955524 A PL44955524 A PL 44955524A PL 449555 A1 PL449555 A1 PL 449555A1
- Authority
- PL
- Poland
- Prior art keywords
- emitter
- center
- edge
- emitters
- dimensional
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02375—Positioning of the laser chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0239—Combinations of electrical or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Matryca laserów o emisji krawędziowej, emitująca światło o długości fali 540 nm o całkowitej mocy 20 W, składająca się z 20 pojedynczych emiterów pokrytych wspólnym kontaktem wykonanym ze złota o grubości 1 µm, charakteryzująca się jednorodną temperaturą wszystkich emiterów (odchylenie standardowe maksymalnych temperatur w każdym z emiterów nie przekracza 0,1 K), o zmiennych odległościach pomiędzy emiterami. Wyrównanie temperatury następuje wskutek rozmieszczenia emiterów w taki sposób, że odległość pomiędzy środkiem emitera (1) a emitera (2) wynosi 27,771 µm, pomiędzy środkiem emitera (2) a emitera (3) wynosi 37,228 µm, pomiędzy środkiem emitera (3) a emitera (4) wynosi 43,735 µm, pomiędzy środkiem emitera (4) a emitera (5) wynosi 48,001 µm, pomiędzy środkiem emitera (5) a emitera (6) wynosi 52,078 µm, pomiędzy środkiem emitera (6) a emitera (7) wynosi 55,320 µm, pomiędzy środkiem emitera (7) a emitera (8) wynosi 58,161 µm, pomiędzy środkiem emitera (8) a emitera (9) wynosi 60,252 µm, pomiędzy środkiem emitera (9) a emitera (10) wynosi 61,366 µm, pomiędzy środkiem emitera (10) a emitera (11) wynosi 62,175 µm, pomiędzy środkiem emitera (11) a emitera (12) wynosi 61,366 µm, pomiędzy środkiem emitera (12) a emitera (13) wynosi 60,252 µm, pomiędzy środkiem emitera (13) a emitera (14) wynosi 58,161 µm, pomiędzy środkiem emitera (14) a emitera (15) wynosi 55,320 µm, pomiędzy środkiem emitera (15) a emitera (16) wynosi 52,078 µm, pomiędzy środkiem emitera (16) a emitera (17) wynosi 48,001 µm, pomiędzy środkiem emitera (17) a emitera (18) wynosi 43,735 µm, pomiędzy środkiem emitera (18) a emitera (19) wynosi 37,228 µm, pomiędzy środkiem emitera (19) a emitera (20) wynosi 27,771 µm oraz pokryta warstwą złota (21) o grubości 1,00 µm i szerokości takiej, że wystaje ona na zewnątrz o 6,537 µm od środka emitera (1) oraz emitera (20), przy czym każdy emiter ma szerokość 2 µm.An edge-emitting laser array emitting light at a wavelength of 540 nm with a total power of 20 W, consisting of 20 individual emitters covered with a common contact made of 1 µm thick gold, characterized by a uniform temperature of all emitters (the standard deviation of the maximum temperatures in each emitter does not exceed 0.1 K), with variable distances between emitters. The temperature equalization is achieved by arranging the emitters in such a way that the distance between the center of the emitter (1) and the emitter (2) is 27.771 µm, between the center of the emitter (2) and the emitter (3) is 37.228 µm, between the center of the emitter (3) and the emitter (4) is 43.735 µm, between the center of the emitter (4) and the emitter (5) is 48.001 µm, between the center of the emitter (5) and the emitter (6) is 52.078 µm, between the center of the emitter (6) and the emitter (7) is 55.320 µm, between the center of the emitter (7) and the emitter (8) is 58.161 µm, between the center of the emitter (8) and the emitter (9) is 60.252 µm, between the center of the emitter (9) and the emitter (10) is 61.366 µm, between the center of the emitter (10) and the emitter (11) is 62.175 µm, between the center of the emitter (11) and the emitter (12) is 61.366 µm, between the center of the emitter (12) and the emitter (13) is 60.252 µm, between the center of the emitter (13) and the emitter (14) is 58.161 µm, between the center of the emitter (14) and the emitter (15) is 55.320 µm, between the center of the emitter (15) and the emitter (16) is 52.078 µm, between the center of the emitter (16) and the emitter (17) is 48.001 µm, between the center of the emitter (17) and the emitter (18) is 43.735 µm, between the center of the emitter (18) and emitter (19) is 37.228 µm, between the center of emitter (19) and emitter (20) is 27.771 µm, and covered with a gold layer (21) 1.00 µm thick and wide such that it protrudes outward by 6.537 µm from the center of emitter (1) and emitter (20), each emitter having a width of 2 µm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL449555A PL449555A1 (en) | 2024-08-22 | 2024-08-22 | Design of the top electrical contact and emitter arrangement in a one-dimensional 20-element array of 20 W edge-cut semiconductor lasers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL449555A PL449555A1 (en) | 2024-08-22 | 2024-08-22 | Design of the top electrical contact and emitter arrangement in a one-dimensional 20-element array of 20 W edge-cut semiconductor lasers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL449555A1 true PL449555A1 (en) | 2026-02-23 |
Family
ID=98825377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL449555A PL449555A1 (en) | 2024-08-22 | 2024-08-22 | Design of the top electrical contact and emitter arrangement in a one-dimensional 20-element array of 20 W edge-cut semiconductor lasers |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL449555A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02103987A (en) * | 1988-07-22 | 1990-04-17 | Nec Corp | Semiconductor laser-array device |
| CN1744333A (en) * | 2005-07-11 | 2006-03-08 | 东莞市福地电子材料有限公司 | Light-emitting diode and its manufacturing method |
| JP2017151236A (en) * | 2016-02-24 | 2017-08-31 | エーエーシー テクノロジーズ ピーティーイー リミテッドＡａｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ．Ｌｔｄ． | Imaging lens |
| US20240120281A1 (en) * | 2012-09-26 | 2024-04-11 | Yang Ping Jung | Chip package |
-
2024
- 2024-08-22 PL PL449555A patent/PL449555A1/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02103987A (en) * | 1988-07-22 | 1990-04-17 | Nec Corp | Semiconductor laser-array device |
| CN1744333A (en) * | 2005-07-11 | 2006-03-08 | 东莞市福地电子材料有限公司 | Light-emitting diode and its manufacturing method |
| US20240120281A1 (en) * | 2012-09-26 | 2024-04-11 | Yang Ping Jung | Chip package |
| JP2017151236A (en) * | 2016-02-24 | 2017-08-31 | エーエーシー テクノロジーズ ピーティーイー リミテッドＡａｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ．Ｌｔｄ． | Imaging lens |
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