PL449552A1 - Design of the top electrical contact and emitter arrangement in a one-dimensional 14-element array of 14 W edge-cut semiconductor lasers - Google Patents
Design of the top electrical contact and emitter arrangement in a one-dimensional 14-element array of 14 W edge-cut semiconductor lasersInfo
- Publication number
- PL449552A1 PL449552A1 PL449552A PL44955224A PL449552A1 PL 449552 A1 PL449552 A1 PL 449552A1 PL 449552 A PL449552 A PL 449552A PL 44955224 A PL44955224 A PL 44955224A PL 449552 A1 PL449552 A1 PL 449552A1
- Authority
- PL
- Poland
- Prior art keywords
- emitter
- center
- edge
- emitters
- dimensional
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02375—Positioning of the laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0239—Combinations of electrical or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Matryca laserów o emisji krawędziowej, emitująca światło o długości fali 540 nm o całkowitej mocy 14 W, składająca się z 14 pojedynczych emiterów pokrytych wspólnym kontaktem wykonanym ze złota o grubości 1 µm, charakteryzująca się jednorodną temperaturą wszystkich emiterów (odchylenie standardowe maksymalnych temperatur w każdym z emiterów nie przekracza 0,1 K), o zmiennych odległościach pomiędzy emiterami. Wyrównanie temperatury następuje wskutek rozmieszczenia emiterów w taki sposób, że odległość pomiędzy środkiem emitera (1) a emitera (2) wynosi 30,991 µm, pomiędzy środkiem emitera (2) a emitera (3) wynosi 42,451 µm, pomiędzy środkiem emitera (3) a emitera (4) wynosi 49,384 µm, pomiędzy środkiem emitera (4) a emitera (5) wynosi 54,133 µm, pomiędzy środkiem emitera (5) a emitera (6) wynosi 57,819 µm, pomiędzy środkiem emitera (6) a emitera (7) wynosi 59,698 µm, pomiędzy środkiem emitera (7) a emitera (8) wynosi 61,048 µm, pomiędzy środkiem emitera (8) a emitera (9) wynosi 59,698 µm, pomiędzy środkiem emitera (9) a emitera (10) wynosi 57,819 µm, pomiędzy środkiem emitera (10) a emitera (11) wynosi 54,133 µm, pomiędzy środkiem emitera (11) a emitera (12) wynosi 49,384 µm, pomiędzy środkiem emitera (12) a emitera (13) wynosi 42,451 µm, pomiędzy środkiem emitera (13) a emitera (14) wynosi 30,991 µm oraz pokryta warstwą złota (15) o grubości 1,00 µm i szerokości takiej, że wystaje ona na zewnątrz o 7,245 µm od środka emitera (1) oraz emitera (14), przy czym każdy emiter ma szerokość 2 µm.An edge-emitting laser array emitting light at a wavelength of 540 nm with a total power of 14 W, consisting of 14 individual emitters covered with a common contact made of 1 µm thick gold, characterized by a uniform temperature of all emitters (the standard deviation of the maximum temperatures in each emitter does not exceed 0.1 K), with variable distances between emitters. The temperature equalization is achieved by arranging the emitters in such a way that the distance between the center of the emitter (1) and the emitter (2) is 30.991 µm, between the center of the emitter (2) and the emitter (3) is 42.451 µm, between the center of the emitter (3) and the emitter (4) is 49.384 µm, between the center of the emitter (4) and the emitter (5) is 54.133 µm, between the center of the emitter (5) and the emitter (6) is 57.819 µm, between the center of the emitter (6) and the emitter (7) is 59.698 µm, between the center of the emitter (7) and the emitter (8) is 61.048 µm, between the center of the emitter (8) and the emitter (9) is 59.698 µm, between the center of the emitter (9) and the emitter (10) is 57.819 µm, between the center of the emitter (10) and the emitter (11) is 54.133 µm, between the center of the emitter (11) and the emitter (12) is 49.384 µm, between the center of the emitter (12) and the emitter (13) is 42.451 µm, between the center of the emitter (13) and the emitter (14) is 30.991 µm, and covered with a gold layer (15) 1.00 µm thick and having a width such that it protrudes outward by 7.245 µm from the center of the emitter (1) and the emitter (14), each emitter having a width of 2 µm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL449552A PL449552A1 (en) | 2024-08-22 | 2024-08-22 | Design of the top electrical contact and emitter arrangement in a one-dimensional 14-element array of 14 W edge-cut semiconductor lasers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL449552A PL449552A1 (en) | 2024-08-22 | 2024-08-22 | Design of the top electrical contact and emitter arrangement in a one-dimensional 14-element array of 14 W edge-cut semiconductor lasers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL449552A1 true PL449552A1 (en) | 2026-02-23 |
Family
ID=98825374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL449552A PL449552A1 (en) | 2024-08-22 | 2024-08-22 | Design of the top electrical contact and emitter arrangement in a one-dimensional 14-element array of 14 W edge-cut semiconductor lasers |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL449552A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02103987A (en) * | 1988-07-22 | 1990-04-17 | Nec Corp | Semiconductor laser-array device |
| CN1744333A (en) * | 2005-07-11 | 2006-03-08 | 东莞市福地电子材料有限公司 | Light-emitting diode and its manufacturing method |
| JP2017151236A (en) * | 2016-02-24 | 2017-08-31 | エーエーシー テクノロジーズ ピーティーイー リミテッドＡａｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ．Ｌｔｄ． | Imaging lens |
| US20240120281A1 (en) * | 2012-09-26 | 2024-04-11 | Yang Ping Jung | Chip package |
-
2024
- 2024-08-22 PL PL449552A patent/PL449552A1/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02103987A (en) * | 1988-07-22 | 1990-04-17 | Nec Corp | Semiconductor laser-array device |
| CN1744333A (en) * | 2005-07-11 | 2006-03-08 | 东莞市福地电子材料有限公司 | Light-emitting diode and its manufacturing method |
| US20240120281A1 (en) * | 2012-09-26 | 2024-04-11 | Yang Ping Jung | Chip package |
| JP2017151236A (en) * | 2016-02-24 | 2017-08-31 | エーエーシー テクノロジーズ ピーティーイー リミテッドＡａｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ．Ｌｔｄ． | Imaging lens |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20110274131A1 (en) | Two-dimensional surface-emitting laser array element, surface-emitting laser device and light source | |
| JP7582204B2 (en) | Method for manufacturing vertical cavity surface emitting laser element, method for manufacturing vertical cavity surface emitting laser element array, and method for manufacturing vertical cavity surface emitting laser module | |
| WO1990010327A1 (en) | A heat dissipating device for laser diodes | |
| US7177335B2 (en) | Semiconductor laser array with a lattice structure | |
| JP2015056660A (en) | Wavelength tunable laser, tunable laser manufacturing method and operating method | |
| JP3736462B2 (en) | Semiconductor laser device | |
| KR100634538B1 (en) | Semiconductor light emitting device having efficient cooling structure and manufacturing method thereof | |
| PL449552A1 (en) | Design of the top electrical contact and emitter arrangement in a one-dimensional 14-element array of 14 W edge-cut semiconductor lasers | |
| PL449555A1 (en) | Design of the top electrical contact and emitter arrangement in a one-dimensional 20-element array of 20 W edge-cut semiconductor lasers | |
| PL449554A1 (en) | Design of the top electrical contact and emitter arrangement in a one-dimensional 18-element array of 18 W edge-cut semiconductor lasers | |
| PL449548A1 (en) | Design of the top electrical contact and emitter arrangement in a one-dimensional 6-element array of 6 W edge-cut semiconductor lasers | |
| PL449553A1 (en) | Design of the top electrical contact and emitter arrangement in a one-dimensional 16-element array of 16 W edge-cut semiconductor lasers | |
| PL449549A1 (en) | Design of the top electrical contact and emitter arrangement in a one-dimensional 8-element array of 8 W edge-cut semiconductor lasers | |
| PL449551A1 (en) | Upper electrical contact structure and emitter arrangement in a one-dimensional twelve-element array of edge-emitting semiconductor lasers with a power of 12 watts | |
| PL449550A1 (en) | Upper electrical contact structure and emitter arrangement in a one-dimensional ten-element array of edge-emitting semiconductor lasers with a power of 10 watts | |
| JP2011507263A (en) | Tunable semiconductor laser device | |
| JP2022002245A (en) | Surface emission type quantum cascade laser | |
| US7656927B2 (en) | Optical semiconductor element and optical semiconductor device | |
| JP3869106B2 (en) | Surface emitting laser device | |
| Grabherr et al. | Efficient bottom-emitting VCSEL arrays for high CW optical output power | |
| Grabherr et al. | Commercial VCSELs reach 0.1-W cw output power | |
| CN100409512C (en) | Laser diode with variable index amplifying section | |
| JP2023094589A (en) | Semiconductor laser diode containing inverted pn junction | |
| JP2004146515A (en) | Semiconductor laser device | |
| CN116207605B (en) | A junction-temperature tunable vertical-cavity surface-emitting laser |