PL449553A1 - Design of the top electrical contact and emitter arrangement in a one-dimensional 16-element array of 16 W edge-cut semiconductor lasers - Google Patents
Design of the top electrical contact and emitter arrangement in a one-dimensional 16-element array of 16 W edge-cut semiconductor lasersInfo
- Publication number
- PL449553A1 PL449553A1 PL449553A PL44955324A PL449553A1 PL 449553 A1 PL449553 A1 PL 449553A1 PL 449553 A PL449553 A PL 449553A PL 44955324 A PL44955324 A PL 44955324A PL 449553 A1 PL449553 A1 PL 449553A1
- Authority
- PL
- Poland
- Prior art keywords
- emitter
- center
- edge
- emitters
- dimensional
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02375—Positioning of the laser chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0239—Combinations of electrical or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Matryca laserów o emisji krawędziowej, emitująca światło o długości fali 540 nm o całkowitej mocy 16 W, składająca się z 16 pojedynczych emiterów pokrytych wspólnym kontaktem wykonanym ze złota o grubości 1 µm, charakteryzująca się jednorodną temperaturą wszystkich emiterów (odchylenie standardowe maksymalnych temperatur w każdym z emiterów nie przekracza 0,1 K), o zmiennych odległościach pomiędzy emiterami. Wyrównanie temperatury następuje wskutek rozmieszczenia emiterów w taki sposób, że odległość pomiędzy środkiem emitera (1) a emitera (2) wynosi 29,442 µm, pomiędzy środkiem emitera (2) a emitera (3) wynosi 40,881 µm, pomiędzy środkiem emitera (3) a emitera (4) wynosi 46,745 µm, pomiędzy środkiem emitera (4) a emitera (5) wynosi 52,523 µm, pomiędzy środkiem emitera (5) a emitera (6) wynosi 55,227 µm, pomiędzy środkiem emitera (6) a emitera (7) wynosi 59,440 µm, pomiędzy środkiem emitera (7) a emitera (8) wynosi 59,697 µm, pomiędzy środkiem emitera (8) a emitera (9) wynosi 62,087 µm, pomiędzy środkiem emitera (9) a emitera (10) wynosi 59,697 µm, pomiędzy środkiem emitera (10) a emitera (11) wynosi 59,440 µm, pomiędzy środkiem emitera (11) a emitera (12) wynosi 55,227 µm, pomiędzy środkiem emitera (12) a emitera (13) wynosi 52,523 µm, pomiędzy środkiem emitera (13) a emitera (14) wynosi 46,745 µm, pomiędzy środkiem emitera (14) a emitera (15) wynosi 40,881 µm, pomiędzy środkiem emitera (15) a emitera (16) wynosi 29,442 µm oraz pokryta warstwą złota (17) o grubości 1,00 µm i szerokości takiej, że wystaje ona na zewnątrz o 7,102 µm od środka emitera (1) oraz emitera (16), przy czym każdy emiter ma szerokość 2 µm.An edge-emitting laser array emitting light at a wavelength of 540 nm with a total power of 16 W, consisting of 16 individual emitters covered with a common contact made of 1 µm thick gold, characterized by a uniform temperature of all emitters (the standard deviation of the maximum temperatures in each emitter does not exceed 0.1 K), with variable distances between emitters. The temperature equalization is achieved by arranging the emitters in such a way that the distance between the center of the emitter (1) and the emitter (2) is 29.442 µm, between the center of the emitter (2) and the emitter (3) is 40.881 µm, between the center of the emitter (3) and the emitter (4) is 46.745 µm, between the center of the emitter (4) and the emitter (5) is 52.523 µm, between the center of the emitter (5) and the emitter (6) is 55.227 µm, between the center of the emitter (6) and the emitter (7) is 59.440 µm, between the center of the emitter (7) and the emitter (8) is 59.697 µm, between the center of the emitter (8) and the emitter (9) is 62.087 µm, between the center of the emitter (9) and the emitter (10) is 59.697 µm, between the center of the emitter (10) and the emitter (11) is 59.440 µm, between the center of the emitter (11) and the emitter (12) is 55.227 µm, between the center of the emitter (12) and the emitter (13) is 52.523 µm, between the center of the emitter (13) and the emitter (14) is 46.745 µm, between the center of the emitter (14) and the emitter (15) is 40.881 µm, between the center of the emitter (15) and the emitter (16) is 29.442 µm, and covered with a gold layer (17) having a thickness of 1.00 µm and a width such that it protrudes outward by 7.102 µm from the center of the emitter (1) and the emitter (16), each emitter having a width of 2 µm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL449553A PL449553A1 (en) | 2024-08-22 | 2024-08-22 | Design of the top electrical contact and emitter arrangement in a one-dimensional 16-element array of 16 W edge-cut semiconductor lasers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL449553A PL449553A1 (en) | 2024-08-22 | 2024-08-22 | Design of the top electrical contact and emitter arrangement in a one-dimensional 16-element array of 16 W edge-cut semiconductor lasers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL449553A1 true PL449553A1 (en) | 2026-02-23 |
Family
ID=98825375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL449553A PL449553A1 (en) | 2024-08-22 | 2024-08-22 | Design of the top electrical contact and emitter arrangement in a one-dimensional 16-element array of 16 W edge-cut semiconductor lasers |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL449553A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02103987A (en) * | 1988-07-22 | 1990-04-17 | Nec Corp | Semiconductor laser-array device |
| CN1744333A (en) * | 2005-07-11 | 2006-03-08 | 东莞市福地电子材料有限公司 | Light-emitting diode and its manufacturing method |
| JP2017151236A (en) * | 2016-02-24 | 2017-08-31 | エーエーシー テクノロジーズ ピーティーイー リミテッドAac Technologies Pte.Ltd. | Imaging lens |
| US20240120281A1 (en) * | 2012-09-26 | 2024-04-11 | Yang Ping Jung | Chip package |
-
2024
- 2024-08-22 PL PL449553A patent/PL449553A1/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02103987A (en) * | 1988-07-22 | 1990-04-17 | Nec Corp | Semiconductor laser-array device |
| CN1744333A (en) * | 2005-07-11 | 2006-03-08 | 东莞市福地电子材料有限公司 | Light-emitting diode and its manufacturing method |
| US20240120281A1 (en) * | 2012-09-26 | 2024-04-11 | Yang Ping Jung | Chip package |
| JP2017151236A (en) * | 2016-02-24 | 2017-08-31 | エーエーシー テクノロジーズ ピーティーイー リミテッドAac Technologies Pte.Ltd. | Imaging lens |
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