PL449553A1 - Design of the top electrical contact and emitter arrangement in a one-dimensional 16-element array of 16 W edge-cut semiconductor lasers - Google Patents

Design of the top electrical contact and emitter arrangement in a one-dimensional 16-element array of 16 W edge-cut semiconductor lasers

Info

Publication number
PL449553A1
PL449553A1 PL449553A PL44955324A PL449553A1 PL 449553 A1 PL449553 A1 PL 449553A1 PL 449553 A PL449553 A PL 449553A PL 44955324 A PL44955324 A PL 44955324A PL 449553 A1 PL449553 A1 PL 449553A1
Authority
PL
Poland
Prior art keywords
emitter
center
edge
emitters
dimensional
Prior art date
Application number
PL449553A
Other languages
Polish (pl)
Inventor
Maciej Dems
Robert Sarzała
Original Assignee
Politechnika Łódzka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Politechnika Łódzka filed Critical Politechnika Łódzka
Priority to PL449553A priority Critical patent/PL449553A1/en
Publication of PL449553A1 publication Critical patent/PL449553A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02375Positioning of the laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0239Combinations of electrical or optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Matryca laserów o emisji krawędziowej, emitująca światło o długości fali 540 nm o całkowitej mocy 16 W, składająca się z 16 pojedynczych emiterów pokrytych wspólnym kontaktem wykonanym ze złota o grubości 1 µm, charakteryzująca się jednorodną temperaturą wszystkich emiterów (odchylenie standardowe maksymalnych temperatur w każdym z emiterów nie przekracza 0,1 K), o zmiennych odległościach pomiędzy emiterami. Wyrównanie temperatury następuje wskutek rozmieszczenia emiterów w taki sposób, że odległość pomiędzy środkiem emitera (1) a emitera (2) wynosi 29,442 µm, pomiędzy środkiem emitera (2) a emitera (3) wynosi 40,881 µm, pomiędzy środkiem emitera (3) a emitera (4) wynosi 46,745 µm, pomiędzy środkiem emitera (4) a emitera (5) wynosi 52,523 µm, pomiędzy środkiem emitera (5) a emitera (6) wynosi 55,227 µm, pomiędzy środkiem emitera (6) a emitera (7) wynosi 59,440 µm, pomiędzy środkiem emitera (7) a emitera (8) wynosi 59,697 µm, pomiędzy środkiem emitera (8) a emitera (9) wynosi 62,087 µm, pomiędzy środkiem emitera (9) a emitera (10) wynosi 59,697 µm, pomiędzy środkiem emitera (10) a emitera (11) wynosi 59,440 µm, pomiędzy środkiem emitera (11) a emitera (12) wynosi 55,227 µm, pomiędzy środkiem emitera (12) a emitera (13) wynosi 52,523 µm, pomiędzy środkiem emitera (13) a emitera (14) wynosi 46,745 µm, pomiędzy środkiem emitera (14) a emitera (15) wynosi 40,881 µm, pomiędzy środkiem emitera (15) a emitera (16) wynosi 29,442 µm oraz pokryta warstwą złota (17) o grubości 1,00 µm i szerokości takiej, że wystaje ona na zewnątrz o 7,102 µm od środka emitera (1) oraz emitera (16), przy czym każdy emiter ma szerokość 2 µm.An edge-emitting laser array emitting light at a wavelength of 540 nm with a total power of 16 W, consisting of 16 individual emitters covered with a common contact made of 1 µm thick gold, characterized by a uniform temperature of all emitters (the standard deviation of the maximum temperatures in each emitter does not exceed 0.1 K), with variable distances between emitters. The temperature equalization is achieved by arranging the emitters in such a way that the distance between the center of the emitter (1) and the emitter (2) is 29.442 µm, between the center of the emitter (2) and the emitter (3) is 40.881 µm, between the center of the emitter (3) and the emitter (4) is 46.745 µm, between the center of the emitter (4) and the emitter (5) is 52.523 µm, between the center of the emitter (5) and the emitter (6) is 55.227 µm, between the center of the emitter (6) and the emitter (7) is 59.440 µm, between the center of the emitter (7) and the emitter (8) is 59.697 µm, between the center of the emitter (8) and the emitter (9) is 62.087 µm, between the center of the emitter (9) and the emitter (10) is 59.697 µm, between the center of the emitter (10) and the emitter (11) is 59.440 µm, between the center of the emitter (11) and the emitter (12) is 55.227 µm, between the center of the emitter (12) and the emitter (13) is 52.523 µm, between the center of the emitter (13) and the emitter (14) is 46.745 µm, between the center of the emitter (14) and the emitter (15) is 40.881 µm, between the center of the emitter (15) and the emitter (16) is 29.442 µm, and covered with a gold layer (17) having a thickness of 1.00 µm and a width such that it protrudes outward by 7.102 µm from the center of the emitter (1) and the emitter (16), each emitter having a width of 2 µm.

PL449553A 2024-08-22 2024-08-22 Design of the top electrical contact and emitter arrangement in a one-dimensional 16-element array of 16 W edge-cut semiconductor lasers PL449553A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL449553A PL449553A1 (en) 2024-08-22 2024-08-22 Design of the top electrical contact and emitter arrangement in a one-dimensional 16-element array of 16 W edge-cut semiconductor lasers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL449553A PL449553A1 (en) 2024-08-22 2024-08-22 Design of the top electrical contact and emitter arrangement in a one-dimensional 16-element array of 16 W edge-cut semiconductor lasers

Publications (1)

Publication Number Publication Date
PL449553A1 true PL449553A1 (en) 2026-02-23

Family

ID=98825375

Family Applications (1)

Application Number Title Priority Date Filing Date
PL449553A PL449553A1 (en) 2024-08-22 2024-08-22 Design of the top electrical contact and emitter arrangement in a one-dimensional 16-element array of 16 W edge-cut semiconductor lasers

Country Status (1)

Country Link
PL (1) PL449553A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02103987A (en) * 1988-07-22 1990-04-17 Nec Corp Semiconductor laser-array device
CN1744333A (en) * 2005-07-11 2006-03-08 东莞市福地电子材料有限公司 Light-emitting diode and its manufacturing method
JP2017151236A (en) * 2016-02-24 2017-08-31 エーエーシー テクノロジーズ ピーティーイー リミテッドAac Technologies Pte.Ltd. Imaging lens
US20240120281A1 (en) * 2012-09-26 2024-04-11 Yang Ping Jung Chip package

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02103987A (en) * 1988-07-22 1990-04-17 Nec Corp Semiconductor laser-array device
CN1744333A (en) * 2005-07-11 2006-03-08 东莞市福地电子材料有限公司 Light-emitting diode and its manufacturing method
US20240120281A1 (en) * 2012-09-26 2024-04-11 Yang Ping Jung Chip package
JP2017151236A (en) * 2016-02-24 2017-08-31 エーエーシー テクノロジーズ ピーティーイー リミテッドAac Technologies Pte.Ltd. Imaging lens

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