PL449549A1 - Design of the top electrical contact and emitter arrangement in a one-dimensional 8-element array of 8 W edge-cut semiconductor lasers - Google Patents

Design of the top electrical contact and emitter arrangement in a one-dimensional 8-element array of 8 W edge-cut semiconductor lasers

Info

Publication number
PL449549A1
PL449549A1 PL449549A PL44954924A PL449549A1 PL 449549 A1 PL449549 A1 PL 449549A1 PL 449549 A PL449549 A PL 449549A PL 44954924 A PL44954924 A PL 44954924A PL 449549 A1 PL449549 A1 PL 449549A1
Authority
PL
Poland
Prior art keywords
emitter
center
edge
emitters
dimensional
Prior art date
Application number
PL449549A
Other languages
Polish (pl)
Inventor
Maciej Dems
Robert Sarzała
Original Assignee
Politechnika Łódzka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Politechnika Łódzka filed Critical Politechnika Łódzka
Priority to PL449549A priority Critical patent/PL449549A1/en
Publication of PL449549A1 publication Critical patent/PL449549A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Matryca laserów o emisji krawędziowej, emitująca światło o długości fali 540 nm o całkowitej mocy 8 W, składająca się z 8 pojedynczych emiterów pokrytych wspólnym kontaktem wykonanym ze złota o grubości 1 µm, charakteryzująca się jednorodną temperaturą wszystkich emiterów (odchylenie standardowe maksymalnych temperatur w każdym z emiterów nie przekracza 0,1 K), o zmiennych odległościach pomiędzy emiterami. Wyrównanie temperatury następuje wskutek rozmieszczenia emiterów w taki sposób, że odległość pomiędzy środkiem emitera (1) a emitera (2) wynosi 36,462 µm, pomiędzy środkiem emitera (2) a emitera (3) wynosi 52,247 µm, pomiędzy środkiem emitera (3) a emitera (4) wynosi 55,958 µm, pomiędzy środkiem emitera (4) a emitera (5) wynosi 60,666 µm, pomiędzy środkiem emitera (5) a emitera (6) wynosi 55,958 µm, pomiędzy środkiem emitera (6) a emitera (7) wynosi 52,247 µm, pomiędzy środkiem emitera (7) a emitera (8) wynosi 36,462 µm oraz pokryta warstwą złota (9) o grubości 1,00 µm i szerokości takiej, że wystaje ona na zewnątrz o 8,503 µm od środka emitera (1) oraz emitera (8), przy czym każdy emiter ma szerokość 2 µm.An edge-emitting laser array emitting light at a wavelength of 540 nm with a total power of 8 W, consisting of 8 individual emitters covered with a common contact made of 1 µm thick gold, characterized by a uniform temperature of all emitters (the standard deviation of the maximum temperatures in each emitter does not exceed 0.1 K), with variable distances between emitters. The temperature equalization is achieved by arranging the emitters in such a way that the distance between the center of the emitter (1) and the emitter (2) is 36.462 µm, between the center of the emitter (2) and the emitter (3) is 52.247 µm, between the center of the emitter (3) and the emitter (4) is 55.958 µm, between the center of the emitter (4) and the emitter (5) is 60.666 µm, between the center of the emitter (5) and the emitter (6) is 55.958 µm, between the center of the emitter (6) and the emitter (7) is 52.247 µm, between the center of the emitter (7) and the emitter (8) is 36.462 µm and covered with a gold layer (9) of 1.00 µm thickness and width such that it protrudes outwards by 8.503 µm from the center of the emitter (1) and emitter (8), each emitter having a width of 2 µm.

PL449549A 2024-08-22 2024-08-22 Design of the top electrical contact and emitter arrangement in a one-dimensional 8-element array of 8 W edge-cut semiconductor lasers PL449549A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL449549A PL449549A1 (en) 2024-08-22 2024-08-22 Design of the top electrical contact and emitter arrangement in a one-dimensional 8-element array of 8 W edge-cut semiconductor lasers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL449549A PL449549A1 (en) 2024-08-22 2024-08-22 Design of the top electrical contact and emitter arrangement in a one-dimensional 8-element array of 8 W edge-cut semiconductor lasers

Publications (1)

Publication Number Publication Date
PL449549A1 true PL449549A1 (en) 2026-02-23

Family

ID=98825371

Family Applications (1)

Application Number Title Priority Date Filing Date
PL449549A PL449549A1 (en) 2024-08-22 2024-08-22 Design of the top electrical contact and emitter arrangement in a one-dimensional 8-element array of 8 W edge-cut semiconductor lasers

Country Status (1)

Country Link
PL (1) PL449549A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02103987A (en) * 1988-07-22 1990-04-17 Nec Corp Semiconductor laser-array device
CN1744333A (en) * 2005-07-11 2006-03-08 东莞市福地电子材料有限公司 Light-emitting diode and its manufacturing method
JP2017151236A (en) * 2016-02-24 2017-08-31 エーエーシー テクノロジーズ ピーティーイー リミテッドＡａｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ．Ｌｔｄ． Imaging lens
US20240120281A1 (en) * 2012-09-26 2024-04-11 Yang Ping Jung Chip package

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02103987A (en) * 1988-07-22 1990-04-17 Nec Corp Semiconductor laser-array device
CN1744333A (en) * 2005-07-11 2006-03-08 东莞市福地电子材料有限公司 Light-emitting diode and its manufacturing method
US20240120281A1 (en) * 2012-09-26 2024-04-11 Yang Ping Jung Chip package
JP2017151236A (en) * 2016-02-24 2017-08-31 エーエーシー テクノロジーズ ピーティーイー リミテッドＡａｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ．Ｌｔｄ． Imaging lens

Similar Documents

Publication Publication Date Title
CN114374147B (en) An array of emitters with varying spacing between adjacent emitters
US20110274131A1 (en) Two-dimensional surface-emitting laser array element, surface-emitting laser device and light source
JP7582204B2 (en) Method for manufacturing vertical cavity surface emitting laser element, method for manufacturing vertical cavity surface emitting laser element array, and method for manufacturing vertical cavity surface emitting laser module
JP2013065692A (en) Surface emitting semiconductor laser, surface emitting semiconductor laser device, optical transmission device and information processing unit
JP3736462B2 (en) Semiconductor laser device
US7177335B2 (en) Semiconductor laser array with a lattice structure
JP2014229744A (en) Semiconductor light-emitting assembly
KR100634538B1 (en) Semiconductor light emitting device having efficient cooling structure and manufacturing method thereof
JP3990745B2 (en) Semiconductor optical module
PL449549A1 (en) Design of the top electrical contact and emitter arrangement in a one-dimensional 8-element array of 8 W edge-cut semiconductor lasers
PL449553A1 (en) Design of the top electrical contact and emitter arrangement in a one-dimensional 16-element array of 16 W edge-cut semiconductor lasers
PL449552A1 (en) Design of the top electrical contact and emitter arrangement in a one-dimensional 14-element array of 14 W edge-cut semiconductor lasers
PL449554A1 (en) Design of the top electrical contact and emitter arrangement in a one-dimensional 18-element array of 18 W edge-cut semiconductor lasers
PL449555A1 (en) Design of the top electrical contact and emitter arrangement in a one-dimensional 20-element array of 20 W edge-cut semiconductor lasers
PL449548A1 (en) Design of the top electrical contact and emitter arrangement in a one-dimensional 6-element array of 6 W edge-cut semiconductor lasers
PL449551A1 (en) Upper electrical contact structure and emitter arrangement in a one-dimensional twelve-element array of edge-emitting semiconductor lasers with a power of 12 watts
PL449550A1 (en) Upper electrical contact structure and emitter arrangement in a one-dimensional ten-element array of edge-emitting semiconductor lasers with a power of 10 watts
JP2022002245A (en) Surface emission type quantum cascade laser
US7474684B2 (en) Optical semiconductor element and optical semiconductor device
JP3869106B2 (en) Surface emitting laser device
US20050111508A1 (en) Semiconductor laser device
CN100409512C (en) Laser diode with variable index amplifying section
JP2004146515A (en) Semiconductor laser device
CN116207605B (en) A junction-temperature tunable vertical-cavity surface-emitting laser
JPH05235486A (en) Multi-beam semiconductor laser device