PL449554A1 - Design of the top electrical contact and emitter arrangement in a one-dimensional 18-element array of 18 W edge-cut semiconductor lasers - Google Patents

Design of the top electrical contact and emitter arrangement in a one-dimensional 18-element array of 18 W edge-cut semiconductor lasers

Info

Publication number
PL449554A1
PL449554A1 PL449554A PL44955424A PL449554A1 PL 449554 A1 PL449554 A1 PL 449554A1 PL 449554 A PL449554 A PL 449554A PL 44955424 A PL44955424 A PL 44955424A PL 449554 A1 PL449554 A1 PL 449554A1
Authority
PL
Poland
Prior art keywords
emitter
center
edge
emitters
dimensional
Prior art date
Application number
PL449554A
Other languages
Polish (pl)
Inventor
Maciej Dems
Robert Sarzała
Original Assignee
Politechnika Łódzka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Politechnika Łódzka filed Critical Politechnika Łódzka
Priority to PL449554A priority Critical patent/PL449554A1/en
Publication of PL449554A1 publication Critical patent/PL449554A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Matryca laserów o emisji krawędziowej, emitująca światło o długości fali 540 nm o całkowitej mocy 18 W, składająca się z 18 pojedynczych emiterów pokrytych wspólnym kontaktem wykonanym ze złota o grubości 1 µm, charakteryzująca się jednorodną temperaturą wszystkich emiterów (odchylenie standardowe maksymalnych temperatur w każdym z emiterów nie przekracza 0,1 K), o zmiennych odległościach pomiędzy emiterami. Wyrównanie temperatury następuje wskutek rozmieszczenia emiterów w taki sposób, że odległość pomiędzy środkiem emitera (1) a emitera (2) wynosi 28,838 µm, pomiędzy środkiem emitera (2) a emitera (3) wynosi 38,478 µm, pomiędzy środkiem emitera (3) a emitera (4) wynosi 45,670 µm, pomiędzy środkiem emitera (4) a emitera (5) wynosi 49,470 µm, pomiędzy środkiem emitera (5) a emitera (6) wynosi 54,392 µm, pomiędzy środkiem emitera (6) a emitera (7) wynosi 56,499 µm, pomiędzy środkiem emitera (7) a emitera (8) wynosi 60,122 µm, pomiędzy środkiem emitera (8) a emitera (9) wynosi 60,421 µm, pomiędzy środkiem emitera (9) a emitera (10) wynosi 62,220 µm, pomiędzy środkiem emitera (10) a emitera (11) wynosi 60,421 µm, pomiędzy środkiem emitera (11) a emitera (12) wynosi 60,122 µm, pomiędzy środkiem emitera (12) a emitera (13) wynosi 56,499 µm, pomiędzy środkiem emitera (13) a emitera (14) wynosi 54,392 µm, pomiędzy środkiem emitera (14) a emitera (15) wynosi 49,470 µm, pomiędzy środkiem emitera (15) a emitera (16) wynosi 45,670 µm, pomiędzy środkiem emitera (16) a emitera (17) wynosi 38,478 µm, pomiędzy środkiem emitera (17) a emitera (18) wynosi 28,838 µm oraz pokryta warstwą złota (19) o grubości 1,00 µm i szerokości takiej, że wystaje ona na zewnątrz o 6,683 µm od środka emitera (1) oraz emitera (18), przy czym każdy emiter ma szerokość 2 µm.An edge-emitting laser array emitting light at a wavelength of 540 nm with a total power of 18 W, consisting of 18 individual emitters covered with a common contact made of 1 µm thick gold, characterized by a uniform temperature of all emitters (the standard deviation of the maximum temperatures in each emitter does not exceed 0.1 K), with variable distances between emitters. The temperature equalization is achieved by arranging the emitters in such a way that the distance between the center of the emitter (1) and the emitter (2) is 28.838 µm, between the center of the emitter (2) and the emitter (3) is 38.478 µm, between the center of the emitter (3) and the emitter (4) is 45.670 µm, between the center of the emitter (4) and the emitter (5) is 49.470 µm, between the center of the emitter (5) and the emitter (6) is 54.392 µm, between the center of the emitter (6) and the emitter (7) is 56.499 µm, between the center of the emitter (7) and the emitter (8) is 60.122 µm, between the center of the emitter (8) and the emitter (9) is 60.421 µm, between the center of the emitter (9) and the emitter (10) is 62.220 µm, between the center of the emitter (10) and the emitter (11) is 60.421 µm, between the center of the emitter (11) and the emitter (12) is 60.122 µm, between the center of the emitter (12) and the emitter (13) is 56.499 µm, between the center of the emitter (13) and the emitter (14) is 54.392 µm, between the center of the emitter (14) and the emitter (15) is 49.470 µm, between the center of the emitter (15) and the emitter (16) is 45.670 µm, between the center of the emitter (16) and the emitter (17) is 38.478 µm, between the center of the emitter (17) and the emitter (18) is 28.838 µm and covered with a gold layer (19) of 1.00 µm thick and having a width such that it extends outward by 6.683 µm from the center of the emitter (1) and the emitter (18), each emitter having a width of 2 µm.

PL449554A 2024-08-22 2024-08-22 Design of the top electrical contact and emitter arrangement in a one-dimensional 18-element array of 18 W edge-cut semiconductor lasers PL449554A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL449554A PL449554A1 (en) 2024-08-22 2024-08-22 Design of the top electrical contact and emitter arrangement in a one-dimensional 18-element array of 18 W edge-cut semiconductor lasers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL449554A PL449554A1 (en) 2024-08-22 2024-08-22 Design of the top electrical contact and emitter arrangement in a one-dimensional 18-element array of 18 W edge-cut semiconductor lasers

Publications (1)

Publication Number Publication Date
PL449554A1 true PL449554A1 (en) 2026-02-23

Family

ID=98825378

Family Applications (1)

Application Number Title Priority Date Filing Date
PL449554A PL449554A1 (en) 2024-08-22 2024-08-22 Design of the top electrical contact and emitter arrangement in a one-dimensional 18-element array of 18 W edge-cut semiconductor lasers

Country Status (1)

Country Link
PL (1) PL449554A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02103987A (en) * 1988-07-22 1990-04-17 Nec Corp Semiconductor laser-array device
CN1744333A (en) * 2005-07-11 2006-03-08 东莞市福地电子材料有限公司 Light-emitting diode and its manufacturing method
JP2017151236A (en) * 2016-02-24 2017-08-31 エーエーシー テクノロジーズ ピーティーイー リミテッドＡａｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ．Ｌｔｄ． Imaging lens
US20240120281A1 (en) * 2012-09-26 2024-04-11 Yang Ping Jung Chip package

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02103987A (en) * 1988-07-22 1990-04-17 Nec Corp Semiconductor laser-array device
CN1744333A (en) * 2005-07-11 2006-03-08 东莞市福地电子材料有限公司 Light-emitting diode and its manufacturing method
US20240120281A1 (en) * 2012-09-26 2024-04-11 Yang Ping Jung Chip package
JP2017151236A (en) * 2016-02-24 2017-08-31 エーエーシー テクノロジーズ ピーティーイー リミテッドＡａｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ．Ｌｔｄ． Imaging lens

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