PL369225A1 - Sposób trawienia warstw osadzanych na przezroczystych podłożach typu podłoża szklanego - Google Patents
Sposób trawienia warstw osadzanych na przezroczystych podłożach typu podłoża szklanegoInfo
- Publication number
- PL369225A1 PL369225A1 PL02369225A PL36922502A PL369225A1 PL 369225 A1 PL369225 A1 PL 369225A1 PL 02369225 A PL02369225 A PL 02369225A PL 36922502 A PL36922502 A PL 36922502A PL 369225 A1 PL369225 A1 PL 369225A1
- Authority
- PL
- Poland
- Prior art keywords
- glass substrate
- transparent substrates
- layers deposited
- etching layers
- etching
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 2
- 238000005530 etching Methods 0.000 title 1
- 239000011521 glass Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/14—Etching locally
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2217/00—Gas-filled discharge tubes
- H01J2217/38—Cold-cathode tubes
- H01J2217/49—Display panels, e.g. not making use of alternating current
- H01J2217/492—Details
- H01J2217/49207—Electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Gas-Filled Discharge Tubes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0103092A FR2821862B1 (fr) | 2001-03-07 | 2001-03-07 | Procede de gravure de couches deposees sur des substrats transparents du type substrat verrier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL369225A1 true PL369225A1 (pl) | 2005-04-18 |
Family
ID=8860835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL02369225A PL369225A1 (pl) | 2001-03-07 | 2002-02-27 | Sposób trawienia warstw osadzanych na przezroczystych podłożach typu podłoża szklanego |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US7507324B2 (pl) |
| EP (1) | EP1366220A1 (pl) |
| JP (1) | JP2004531641A (pl) |
| KR (1) | KR100888244B1 (pl) |
| CN (1) | CN1279219C (pl) |
| CA (1) | CA2437886A1 (pl) |
| CZ (1) | CZ20032409A3 (pl) |
| FR (1) | FR2821862B1 (pl) |
| PL (1) | PL369225A1 (pl) |
| RU (1) | RU2285067C2 (pl) |
| WO (1) | WO2002070792A1 (pl) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2831708B1 (fr) * | 2001-10-29 | 2004-01-30 | Thomson Licensing Sa | Procede et dispositif pour decaper une couche mince conductrice deposee sur une plaque isolante, de maniere a y former un reseau d'electrodes |
| KR101308505B1 (ko) * | 2005-08-01 | 2013-09-17 | 히다치 조센 가부시키가이샤 | 도전성 금속산화물 박막 제거방법 및 장치 |
| JP4824365B2 (ja) * | 2005-08-25 | 2011-11-30 | 日立造船株式会社 | 導電性金属酸化物除去方法及び装置 |
| JP4824430B2 (ja) * | 2006-02-28 | 2011-11-30 | 富士フイルム株式会社 | ナノ構造体の製造方法 |
| CN101416283B (zh) * | 2006-04-12 | 2010-05-19 | 日立造船株式会社 | 导电性金属氧化物薄膜的除去方法及装置 |
| FR2957941B1 (fr) * | 2010-03-26 | 2012-06-08 | Commissariat Energie Atomique | Procede pour graver une couche d'oxyde metallique conducteur utilisant une microelectrode |
| US8557099B2 (en) * | 2010-10-25 | 2013-10-15 | Ppg Industries Ohio, Inc. | Electrocurtain coating process for coating solar mirrors |
| JP2014105366A (ja) * | 2012-11-28 | 2014-06-09 | Mitsubishi Electric Corp | 金属成分の回収方法および回収装置 |
| KR101498654B1 (ko) * | 2013-05-29 | 2015-03-05 | (주)솔라세라믹 | 고헤이즈를 위한 불소가 도핑된 산화 주석 박막 식각 방법 |
| CN103435266B (zh) * | 2013-08-22 | 2015-08-26 | 大连七色光太阳能科技开发有限公司 | 一种fto导电薄膜的刻蚀方法 |
| RU2572099C1 (ru) * | 2014-07-15 | 2015-12-27 | Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук | Способ локального удаления электропроводного оксидного слоя с диэлектрической подложки |
| KR101614835B1 (ko) | 2015-08-12 | 2016-04-25 | 서울과학기술대학교 산학협력단 | 전기화학적 에칭을 이용한 투명 전극의 표면 개질방법 |
| KR20180093798A (ko) * | 2017-02-13 | 2018-08-22 | 램 리써치 코포레이션 | 에어 갭들을 생성하는 방법 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2541675A1 (de) * | 1975-09-18 | 1977-03-24 | Siemens Ag | Verfahren zum aetzen von zinn- oder indium-dioxyd |
| JPS56163832A (en) * | 1980-05-15 | 1981-12-16 | Inoue Japax Res Inc | Electric machining device |
| US5567304A (en) * | 1995-01-03 | 1996-10-22 | Ibm Corporation | Elimination of island formation and contact resistance problems during electroetching of blanket or patterned thin metallic layers on insulating substrate |
| JP3222423B2 (ja) * | 1997-08-29 | 2001-10-29 | 株式会社城洋 | 電解還元法による導電性金属酸化物の微細加工方法及びその加工装置 |
| US6395152B1 (en) * | 1998-07-09 | 2002-05-28 | Acm Research, Inc. | Methods and apparatus for electropolishing metal interconnections on semiconductor devices |
| US6544391B1 (en) * | 2000-10-17 | 2003-04-08 | Semitool, Inc. | Reactor for electrochemically processing a microelectronic workpiece including improved electrode assembly |
-
2001
- 2001-03-07 FR FR0103092A patent/FR2821862B1/fr not_active Expired - Fee Related
-
2002
- 2002-02-27 CA CA002437886A patent/CA2437886A1/fr not_active Abandoned
- 2002-02-27 CN CNB028060393A patent/CN1279219C/zh not_active Expired - Fee Related
- 2002-02-27 PL PL02369225A patent/PL369225A1/pl not_active Application Discontinuation
- 2002-02-27 JP JP2002569493A patent/JP2004531641A/ja active Pending
- 2002-02-27 US US10/469,830 patent/US7507324B2/en not_active Expired - Fee Related
- 2002-02-27 RU RU2003129657/02A patent/RU2285067C2/ru not_active IP Right Cessation
- 2002-02-27 CZ CZ20032409A patent/CZ20032409A3/cs unknown
- 2002-02-27 EP EP02708421A patent/EP1366220A1/fr not_active Withdrawn
- 2002-02-27 KR KR1020037011490A patent/KR100888244B1/ko not_active IP Right Cessation
- 2002-02-27 WO PCT/FR2002/000706 patent/WO2002070792A1/fr active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| CN1279219C (zh) | 2006-10-11 |
| RU2285067C2 (ru) | 2006-10-10 |
| FR2821862B1 (fr) | 2003-11-14 |
| FR2821862A1 (fr) | 2002-09-13 |
| CA2437886A1 (fr) | 2002-09-12 |
| EP1366220A1 (fr) | 2003-12-03 |
| WO2002070792A1 (fr) | 2002-09-12 |
| CN1500158A (zh) | 2004-05-26 |
| US20040140227A1 (en) | 2004-07-22 |
| KR100888244B1 (ko) | 2009-03-11 |
| CZ20032409A3 (cs) | 2004-02-18 |
| RU2003129657A (ru) | 2005-02-10 |
| US7507324B2 (en) | 2009-03-24 |
| JP2004531641A (ja) | 2004-10-14 |
| KR20030087631A (ko) | 2003-11-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| REFS | Decisions on refusal to grant patents (taken after the publication of the particulars of the applications) |