PL3648553T3 - Urządzenie do obróbki plazmowej - Google Patents

Urządzenie do obróbki plazmowej

Info

Publication number
PL3648553T3
PL3648553T3 PL18823378T PL18823378T PL3648553T3 PL 3648553 T3 PL3648553 T3 PL 3648553T3 PL 18823378 T PL18823378 T PL 18823378T PL 18823378 T PL18823378 T PL 18823378T PL 3648553 T3 PL3648553 T3 PL 3648553T3
Authority
PL
Poland
Prior art keywords
plasma processing
plasma
processing
Prior art date
Application number
PL18823378T
Other languages
English (en)
Inventor
Kazunari Sekiya
Masaharu Tanabe
Tadashi Inoue
Hiroshi Sasamoto
Tatsunori Sato
Nobuaki Tsuchiya
Original Assignee
Canon Anelva Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2017/023603 external-priority patent/WO2019003309A1/ja
Priority claimed from PCT/JP2017/023611 external-priority patent/WO2019003312A1/ja
Application filed by Canon Anelva Corporation filed Critical Canon Anelva Corporation
Publication of PL3648553T3 publication Critical patent/PL3648553T3/pl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32541Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3438Electrodes other than cathode
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/42Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns
    • H03H7/425Balance-balance networks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P50/242
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Toxicology (AREA)
  • General Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
PL18823378T 2017-06-27 2018-06-26 Urządzenie do obróbki plazmowej PL3648553T3 (pl)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
PCT/JP2017/023603 WO2019003309A1 (ja) 2017-06-27 2017-06-27 プラズマ処理装置
PCT/JP2017/023611 WO2019003312A1 (ja) 2017-06-27 2017-06-27 プラズマ処理装置
JP2018017549 2018-02-02
EP18823378.7A EP3648553B1 (en) 2017-06-27 2018-06-26 Plasma treatment device
PCT/JP2018/024145 WO2019004183A1 (ja) 2017-06-27 2018-06-26 プラズマ処理装置

Publications (1)

Publication Number Publication Date
PL3648553T3 true PL3648553T3 (pl) 2021-09-13

Family

ID=64741824

Family Applications (1)

Application Number Title Priority Date Filing Date
PL18823378T PL3648553T3 (pl) 2017-06-27 2018-06-26 Urządzenie do obróbki plazmowej

Country Status (9)

Country Link
US (1) US20200126763A1 (pl)
EP (1) EP3648553B1 (pl)
JP (2) JP6564556B2 (pl)
KR (1) KR102327136B1 (pl)
CN (1) CN110800378B (pl)
PL (1) PL3648553T3 (pl)
SG (1) SG11201912655XA (pl)
TW (1) TWI677907B (pl)
WO (1) WO2019004183A1 (pl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6457707B1 (ja) * 2017-06-27 2019-01-23 キヤノンアネルバ株式会社 プラズマ処理装置
PL3648551T3 (pl) 2017-06-27 2021-12-06 Canon Anelva Corporation Urządzenie do obróbki plazmowej
TWI693863B (zh) * 2017-06-27 2020-05-11 日商佳能安內華股份有限公司 電漿處理裝置
WO2019003312A1 (ja) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
EP3817517B1 (en) * 2018-06-26 2024-08-14 Canon Anelva Corporation Plasma treatment device, plasma treatment method, program, and memory medium
US11535532B1 (en) * 2020-07-17 2022-12-27 Dmitry Medvedev System and method of water purification and hydrogen peroxide generation by plasma
CN115989578A (zh) 2021-05-18 2023-04-18 佳能安内华股份有限公司 层叠体和层叠体制造方法
JP2024011979A (ja) * 2022-07-15 2024-01-25 東京エレクトロン株式会社 成膜装置
US20250232952A1 (en) * 2024-01-12 2025-07-17 Tokyo Electron Limited Balanced resonator source for plasma processing

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BE806098A (fr) * 1973-03-28 1974-02-01 Siemens Ag Procede de fabrication de silicium ou autre matiere semi-conductrice tres pure
US4887005A (en) * 1987-09-15 1989-12-12 Rough J Kirkwood H Multiple electrode plasma reactor power distribution system
US4871421A (en) * 1988-09-15 1989-10-03 Lam Research Corporation Split-phase driver for plasma etch system
JPH02156081A (ja) * 1988-12-09 1990-06-15 Tokuda Seisakusho Ltd スパッタ装置
JPH02156083A (ja) * 1988-12-09 1990-06-15 Tokuda Seisakusho Ltd スパッタ装置
JPH02156080A (ja) * 1988-12-09 1990-06-15 Tokuda Seisakusho Ltd スパッタ装置
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US5989999A (en) * 1994-11-14 1999-11-23 Applied Materials, Inc. Construction of a tantalum nitride film on a semiconductor wafer
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US6818103B1 (en) * 1999-10-15 2004-11-16 Advanced Energy Industries, Inc. Method and apparatus for substrate biasing in multiple electrode sputtering systems
US6677167B2 (en) * 2002-03-04 2004-01-13 Hitachi High-Technologies Corporation Wafer processing apparatus and a wafer stage and a wafer processing method
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JP3575011B1 (ja) * 2003-07-04 2004-10-06 村田 正義 プラズマ表面処理装置およびプラズマ表面処理方法
JP4658506B2 (ja) * 2004-03-31 2011-03-23 浩史 滝川 パルスアークプラズマ生成用電源回路及びパルスアークプラズマ処理装置
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TWI693863B (zh) * 2017-06-27 2020-05-11 日商佳能安內華股份有限公司 電漿處理裝置

Also Published As

Publication number Publication date
TWI677907B (zh) 2019-11-21
JP6714127B2 (ja) 2020-06-24
EP3648553A1 (en) 2020-05-06
TW201905972A (zh) 2019-02-01
KR102327136B1 (ko) 2021-11-15
JP6564556B2 (ja) 2019-08-21
CN110800378B (zh) 2021-12-28
WO2019004183A1 (ja) 2019-01-03
JPWO2019004183A1 (ja) 2019-11-07
KR20200018656A (ko) 2020-02-19
EP3648553B1 (en) 2021-05-19
JP2019194986A (ja) 2019-11-07
SG11201912655XA (en) 2020-01-30
US20200126763A1 (en) 2020-04-23
EP3648553A4 (en) 2020-06-24
CN110800378A (zh) 2020-02-14

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