PL359264A1 - Zawiesiny cząstek ściernych nieorganicznego tlenku w cieczy oraz sposób polerowania powierzchni zawierających miedź - Google Patents

Zawiesiny cząstek ściernych nieorganicznego tlenku w cieczy oraz sposób polerowania powierzchni zawierających miedź

Info

Publication number
PL359264A1
PL359264A1 PL01359264A PL35926401A PL359264A1 PL 359264 A1 PL359264 A1 PL 359264A1 PL 01359264 A PL01359264 A PL 01359264A PL 35926401 A PL35926401 A PL 35926401A PL 359264 A1 PL359264 A1 PL 359264A1
Authority
PL
Poland
Prior art keywords
suspensions
liquids
copper
abrasive particles
inorganic oxide
Prior art date
Application number
PL01359264A
Other languages
English (en)
Inventor
James Neil Pryor
Original Assignee
W.R.Grace & Co.-Conn.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by W.R.Grace & Co.-Conn. filed Critical W.R.Grace & Co.-Conn.
Publication of PL359264A1 publication Critical patent/PL359264A1/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/50—Multilayers
    • B05D7/52—Two layers
    • B05D7/54—No clear coat specified
    • B05D7/546—No clear coat specified each layer being cured, at least partially, separately
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H10P52/403—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2202/00—Metallic substrate
    • B05D2202/10—Metallic substrate based on Fe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
PL01359264A 2000-04-20 2001-04-11 Zawiesiny cząstek ściernych nieorganicznego tlenku w cieczy oraz sposób polerowania powierzchni zawierających miedź PL359264A1 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/551,935 US6447693B1 (en) 1998-10-21 2000-04-20 Slurries of abrasive inorganic oxide particles and method for polishing copper containing surfaces
PCT/US2001/011645 WO2001081490A2 (en) 2000-04-20 2001-04-11 Slurries of abrasive inorganic oxide particles and method for polishing copper containing surfaces

Publications (1)

Publication Number Publication Date
PL359264A1 true PL359264A1 (pl) 2004-08-23

Family

ID=24203270

Family Applications (1)

Application Number Title Priority Date Filing Date
PL01359264A PL359264A1 (pl) 2000-04-20 2001-04-11 Zawiesiny cząstek ściernych nieorganicznego tlenku w cieczy oraz sposób polerowania powierzchni zawierających miedź

Country Status (12)

Country Link
US (1) US6447693B1 (pl)
EP (1) EP1276826A2 (pl)
JP (1) JP2003531502A (pl)
KR (1) KR20030074114A (pl)
CN (1) CN1437643A (pl)
AU (1) AU2001255290A1 (pl)
CA (1) CA2406958A1 (pl)
HK (1) HK1052945A1 (pl)
MX (1) MXPA02010167A (pl)
NO (1) NO20025050L (pl)
PL (1) PL359264A1 (pl)
WO (1) WO2001081490A2 (pl)

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US6602117B1 (en) * 2000-08-30 2003-08-05 Micron Technology, Inc. Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
JP2003086548A (ja) 2001-06-29 2003-03-20 Hitachi Ltd 半導体装置の製造方法及びその研磨液
US6866792B2 (en) * 2001-12-12 2005-03-15 Ekc Technology, Inc. Compositions for chemical mechanical planarization of copper
JP2003277734A (ja) * 2001-12-31 2003-10-02 Hynix Semiconductor Inc 金属用ｃｍｐスラリー及びこれを利用した半導体素子の金属配線コンタクトプラグ形成方法
US6811467B1 (en) * 2002-09-09 2004-11-02 Seagate Technology Llc Methods and apparatus for polishing glass substrates
JP4541796B2 (ja) * 2004-07-30 2010-09-08 ルネサスエレクトロニクス株式会社 研磨スラリーの製造方法
KR101100861B1 (ko) * 2005-04-21 2012-01-02 삼성코닝정밀소재 주식회사 금속 산화물 서스펜션 제조 방법
JP5182483B2 (ja) * 2005-12-16 2013-04-17 Ｊｓｒ株式会社 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット
US7947637B2 (en) * 2006-06-30 2011-05-24 Fujifilm Electronic Materials, U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
CN101909816B (zh) * 2008-10-01 2013-01-23 旭硝子株式会社 研磨浆料、其制造方法、研磨方法及磁盘用玻璃基板的制造方法
JP6559410B2 (ja) * 2014-09-30 2019-08-14 株式会社フジミインコーポレーテッド 研磨用組成物
JP6858763B2 (ja) * 2015-09-30 2021-04-14 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 多結晶仕上げを有する半導体ウエハを処理する方法
US12503383B2 (en) * 2023-03-23 2025-12-23 Transcene Corporation Semiconductor chemical mechanical polishing sludge recycling device

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Publication number Priority date Publication date Assignee Title
US3527028A (en) 1967-09-26 1970-09-08 Bell Telephone Labor Inc Preparation of semiconductor surfaces
US4226743A (en) 1979-03-12 1980-10-07 W. R. Grace & Co. Silica-alumina hydrogel catalyst
US4356107A (en) 1979-11-26 1982-10-26 Nalco Chemical Company Process for preparing silica sols
US4304575A (en) 1980-03-20 1981-12-08 Nalco Chemical Company Preparation of large particle silica sols
US4463108A (en) 1981-07-01 1984-07-31 Ppg Industries, Inc. Precipitated silica pigment for silicone rubber
IT1263807B (it) 1992-01-24 1996-09-03 Mizusawa Industrial Chem Granuli sferici di silice porosa oppure di silicato poroso, procedimento per la loro produzione e loro impiego
GB9215665D0 (en) 1992-07-23 1992-09-09 British Bio Technology Compounds
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
TW311905B (pl) 1994-07-11 1997-08-01 Nissan Chemical Ind Ltd
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
DE69611653T2 (de) 1995-11-10 2001-05-03 Tokuyama Corp., Tokuya Poliersuspensionen und Verfahren zu ihrer Herstellung
US5769689A (en) 1996-02-28 1998-06-23 Rodel, Inc. Compositions and methods for polishing silica, silicates, and silicon nitride
GB2316414B (en) * 1996-07-31 2000-10-11 Tosoh Corp Abrasive shaped article, abrasive disc and polishing method
JP3507628B2 (ja) 1996-08-06 2004-03-15 昭和電工株式会社 化学的機械研磨用研磨組成物
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6068787A (en) 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
SG54606A1 (en) * 1996-12-05 1998-11-16 Fujimi Inc Polishing composition
US6309560B1 (en) 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP3359535B2 (ja) * 1997-04-25 2002-12-24 三井金属鉱業株式会社 半導体装置の製造方法
US6726990B1 (en) 1998-05-27 2004-04-27 Nanogram Corporation Silicon oxide particles
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
JP3810588B2 (ja) 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
US6124207A (en) 1998-08-31 2000-09-26 Micron Technology, Inc. Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries
EP1155092A1 (en) * 1998-10-21 2001-11-21 W.R. Grace & Co.-Conn. Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles

Also Published As

Publication number Publication date
CA2406958A1 (en) 2001-11-01
CN1437643A (zh) 2003-08-20
WO2001081490A2 (en) 2001-11-01
HK1052945A1 (zh) 2003-10-03
JP2003531502A (ja) 2003-10-21
MXPA02010167A (es) 2003-03-10
NO20025050D0 (no) 2002-10-21
NO20025050L (no) 2002-10-21
KR20030074114A (ko) 2003-09-19
EP1276826A2 (en) 2003-01-22
US6447693B1 (en) 2002-09-10
AU2001255290A1 (en) 2001-11-07
WO2001081490A3 (en) 2002-03-28

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