PL2833702T3 - Wysokoczęstotliwościowe źródło zasilania i sposób wybierania napięcia zapłonu - Google Patents
Wysokoczęstotliwościowe źródło zasilania i sposób wybierania napięcia zapłonuInfo
- Publication number
- PL2833702T3 PL2833702T3 PL13806362T PL13806362T PL2833702T3 PL 2833702 T3 PL2833702 T3 PL 2833702T3 PL 13806362 T PL13806362 T PL 13806362T PL 13806362 T PL13806362 T PL 13806362T PL 2833702 T3 PL2833702 T3 PL 2833702T3
- Authority
- PL
- Poland
- Prior art keywords
- power supply
- supply device
- frequency power
- selection method
- voltage selection
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
- H05H2242/26—Matching networks
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Inverter Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012137140A JP5534366B2 (ja) | 2012-06-18 | 2012-06-18 | 高周波電力供給装置、及びイグニッション電圧選定方法 |
| EP13806362.3A EP2833702B1 (en) | 2012-06-18 | 2013-06-03 | High-frequency power supply device and ignition voltage selection method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL2833702T3 true PL2833702T3 (pl) | 2017-05-31 |
Family
ID=49768588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL13806362T PL2833702T3 (pl) | 2012-06-18 | 2013-06-03 | Wysokoczęstotliwościowe źródło zasilania i sposób wybierania napięcia zapłonu |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9072159B2 (OSRAM) |
| EP (1) | EP2833702B1 (OSRAM) |
| JP (1) | JP5534366B2 (OSRAM) |
| KR (1) | KR101556874B1 (OSRAM) |
| CN (1) | CN104322153B (OSRAM) |
| DE (1) | DE13806362T1 (OSRAM) |
| IN (1) | IN2014KN02414A (OSRAM) |
| PL (1) | PL2833702T3 (OSRAM) |
| TW (1) | TWI472271B (OSRAM) |
| WO (1) | WO2013190986A1 (OSRAM) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8783220B2 (en) * | 2008-01-31 | 2014-07-22 | West Virginia University | Quarter wave coaxial cavity igniter for combustion engines |
| JP6413261B2 (ja) * | 2014-03-03 | 2018-10-31 | 株式会社島津製作所 | Ｉｃｐ発光分析装置用高周波電源装置 |
| JP5797313B1 (ja) * | 2014-08-25 | 2015-10-21 | 株式会社京三製作所 | 回生サーキュレータ、高周波電源装置、及び高周波電力の回生方法 |
| KR101760187B1 (ko) | 2015-11-17 | 2017-07-20 | 주식회사 한화 | 고전압 펄스 전달 케이블 |
| US10026592B2 (en) * | 2016-07-01 | 2018-07-17 | Lam Research Corporation | Systems and methods for tailoring ion energy distribution function by odd harmonic mixing |
| KR102575531B1 (ko) | 2017-01-31 | 2023-09-06 | 삼성디스플레이 주식회사 | 표시 패널 및 이를 포함하는 표시 장치 |
| US10502773B2 (en) * | 2017-08-16 | 2019-12-10 | Connaught Electronics Ltd. | System and method for diagnosing electrical faults |
| KR102003942B1 (ko) * | 2017-11-07 | 2019-07-25 | 한국원자력연구원 | 정합 장치를 포함하는 플라즈마 발생 장치 및 임피던스 정합 방법 |
| US12288673B2 (en) | 2017-11-29 | 2025-04-29 | COMET Technologies USA, Inc. | Retuning for impedance matching network control |
| CN111699542B (zh) | 2017-11-29 | 2023-05-16 | 康姆艾德技术美国分公司 | 用于阻抗匹配网络控制的重新调谐 |
| GB201806783D0 (en) * | 2018-04-25 | 2018-06-06 | Spts Technologies Ltd | A plasma generating arrangement |
| US11527385B2 (en) | 2021-04-29 | 2022-12-13 | COMET Technologies USA, Inc. | Systems and methods for calibrating capacitors of matching networks |
| US11114279B2 (en) * | 2019-06-28 | 2021-09-07 | COMET Technologies USA, Inc. | Arc suppression device for plasma processing equipment |
| US11596309B2 (en) | 2019-07-09 | 2023-03-07 | COMET Technologies USA, Inc. | Hybrid matching network topology |
| US11107661B2 (en) | 2019-07-09 | 2021-08-31 | COMET Technologies USA, Inc. | Hybrid matching network topology |
| WO2021041984A1 (en) | 2019-08-28 | 2021-03-04 | COMET Technologies USA, Inc. | High power low frequency coils |
| KR102223875B1 (ko) | 2019-10-30 | 2021-03-05 | 주식회사 뉴파워 프라즈마 | 다중 주파수를 사용하는 건식 식각 장비를 위한 고주파 전원 장치 |
| US11830708B2 (en) | 2020-01-10 | 2023-11-28 | COMET Technologies USA, Inc. | Inductive broad-band sensors for electromagnetic waves |
| US12027351B2 (en) | 2020-01-10 | 2024-07-02 | COMET Technologies USA, Inc. | Plasma non-uniformity detection |
| US11670488B2 (en) | 2020-01-10 | 2023-06-06 | COMET Technologies USA, Inc. | Fast arc detecting match network |
| US11521832B2 (en) | 2020-01-10 | 2022-12-06 | COMET Technologies USA, Inc. | Uniformity control for radio frequency plasma processing systems |
| US11887820B2 (en) | 2020-01-10 | 2024-01-30 | COMET Technologies USA, Inc. | Sector shunts for plasma-based wafer processing systems |
| US11605527B2 (en) | 2020-01-20 | 2023-03-14 | COMET Technologies USA, Inc. | Pulsing control match network |
| US11961711B2 (en) | 2020-01-20 | 2024-04-16 | COMET Technologies USA, Inc. | Radio frequency match network and generator |
| US11373844B2 (en) | 2020-09-28 | 2022-06-28 | COMET Technologies USA, Inc. | Systems and methods for repetitive tuning of matching networks |
| US12057296B2 (en) | 2021-02-22 | 2024-08-06 | COMET Technologies USA, Inc. | Electromagnetic field sensing device |
| US11923175B2 (en) | 2021-07-28 | 2024-03-05 | COMET Technologies USA, Inc. | Systems and methods for variable gain tuning of matching networks |
| JP7473510B2 (ja) * | 2021-08-31 | 2024-04-23 | 株式会社京三製作所 | Ｒｆ帯域電源装置、及びパルス幅変調制御方法 |
| KR102771011B1 (ko) * | 2021-12-17 | 2025-02-24 | 세메스 주식회사 | 플라즈마 공정 설비의 케이블 길이 선정 방법 및 케이블 길이 선정 장치 |
| US12243717B2 (en) | 2022-04-04 | 2025-03-04 | COMET Technologies USA, Inc. | Variable reactance device having isolated gate drive power supplies |
| US11657980B1 (en) | 2022-05-09 | 2023-05-23 | COMET Technologies USA, Inc. | Dielectric fluid variable capacitor |
| US12040139B2 (en) | 2022-05-09 | 2024-07-16 | COMET Technologies USA, Inc. | Variable capacitor with linear impedance and high voltage breakdown |
| US12051549B2 (en) | 2022-08-02 | 2024-07-30 | COMET Technologies USA, Inc. | Coaxial variable capacitor |
| US12132435B2 (en) | 2022-10-27 | 2024-10-29 | COMET Technologies USA, Inc. | Method for repeatable stepper motor homing |
| KR102790867B1 (ko) | 2023-02-24 | 2025-04-04 | 주식회사 동도뉴텍 | 콘크리트 회수수 농도 측정 장치 |
| KR20240139679A (ko) * | 2023-03-15 | 2024-09-24 | 삼성전자주식회사 | 전원 공급 장치와 그를 포함하는 전자 장치 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0436482A (ja) * | 1990-05-30 | 1992-02-06 | Mitsubishi Electric Corp | プラズマ処理装置 |
| US5195045A (en) * | 1991-02-27 | 1993-03-16 | Astec America, Inc. | Automatic impedance matching apparatus and method |
| JP3220383B2 (ja) * | 1996-07-23 | 2001-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びその方法 |
| DE60043505D1 (de) * | 1999-05-06 | 2010-01-21 | Tokyo Electron Ltd | Apparat für die plasma-behandlung |
| US6242360B1 (en) * | 1999-06-29 | 2001-06-05 | Lam Research Corporation | Plasma processing system apparatus, and method for delivering RF power to a plasma processing |
| US20110121735A1 (en) * | 2000-02-22 | 2011-05-26 | Kreos Capital Iii (Uk) Limited | Tissue resurfacing |
| JP2003178989A (ja) * | 2001-10-02 | 2003-06-27 | Mitsubishi Heavy Ind Ltd | プラズマｃｖｄ装置、及び、その電気的欠陥検出方法 |
| JP4388287B2 (ja) * | 2003-02-12 | 2009-12-24 | 東京エレクトロン株式会社 | プラズマ処理装置及び高周波電力供給装置 |
| JP2010114001A (ja) * | 2008-11-07 | 2010-05-20 | Shimada Phys & Chem Ind Co Ltd | プラズマ発生用電源装置 |
| JP5210905B2 (ja) * | 2009-01-30 | 2013-06-12 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| CN201417951Y (zh) * | 2009-05-22 | 2010-03-03 | 宁波市北仑港龙电器有限公司 | 调谐滤波器 |
-
2012
- 2012-06-18 JP JP2012137140A patent/JP5534366B2/ja active Active
-
2013
- 2013-01-07 TW TW102100412A patent/TWI472271B/zh active
- 2013-06-03 WO PCT/JP2013/065338 patent/WO2013190986A1/ja not_active Ceased
- 2013-06-03 IN IN2414KON2014 patent/IN2014KN02414A/en unknown
- 2013-06-03 KR KR1020147033882A patent/KR101556874B1/ko active Active
- 2013-06-03 US US14/391,373 patent/US9072159B2/en active Active
- 2013-06-03 DE DE2038106362 patent/DE13806362T1/de active Pending
- 2013-06-03 CN CN201380028343.2A patent/CN104322153B/zh active Active
- 2013-06-03 EP EP13806362.3A patent/EP2833702B1/en active Active
- 2013-06-03 PL PL13806362T patent/PL2833702T3/pl unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US9072159B2 (en) | 2015-06-30 |
| WO2013190986A1 (ja) | 2013-12-27 |
| JP5534366B2 (ja) | 2014-06-25 |
| CN104322153B (zh) | 2016-05-25 |
| JP2014002909A (ja) | 2014-01-09 |
| CN104322153A (zh) | 2015-01-28 |
| KR20140146231A (ko) | 2014-12-24 |
| TWI472271B (zh) | 2015-02-01 |
| DE13806362T1 (de) | 2015-04-30 |
| EP2833702A1 (en) | 2015-02-04 |
| IN2014KN02414A (OSRAM) | 2015-05-01 |
| EP2833702A4 (en) | 2015-08-05 |
| KR101556874B1 (ko) | 2015-10-01 |
| TW201401938A (zh) | 2014-01-01 |
| US20150115797A1 (en) | 2015-04-30 |
| EP2833702B1 (en) | 2016-12-14 |
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