PL2414567T3 - Semipolarny kryształ półprzewodnika i sposób jego wytwarzania - Google Patents

Semipolarny kryształ półprzewodnika i sposób jego wytwarzania

Info

Publication number
PL2414567T3
PL2414567T3 PL11709883T PL11709883T PL2414567T3 PL 2414567 T3 PL2414567 T3 PL 2414567T3 PL 11709883 T PL11709883 T PL 11709883T PL 11709883 T PL11709883 T PL 11709883T PL 2414567 T3 PL2414567 T3 PL 2414567T3
Authority
PL
Poland
Prior art keywords
production
semipolar semiconductor
semipolar
semiconductor
Prior art date
Application number
PL11709883T
Other languages
English (en)
Polish (pl)
Inventor
Thomas Wunderer
Stephan Schwaiger
Ilona Schwaiger
Rudolph Rösch
Frank Lipski
Ferdinand Scholz
Original Assignee
Freiberger Compound Mat Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freiberger Compound Mat Gmbh filed Critical Freiberger Compound Mat Gmbh
Publication of PL2414567T3 publication Critical patent/PL2414567T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PL11709883T 2010-03-18 2011-03-18 Semipolarny kryształ półprzewodnika i sposób jego wytwarzania PL2414567T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010011895A DE102010011895B4 (de) 2010-03-18 2010-03-18 Verfahren zur Herstellung eines semipolaren Gruppe III-Nitrid-Kristalls, Substrat, freistehendes semipolares Substrat und Verwendung der Substrate
PCT/EP2011/001339 WO2011113605A1 (de) 2010-03-18 2011-03-18 Semipolarer halbleiterkristall und verfahren zur herstellung desselben
EP11709883.0A EP2414567B1 (de) 2010-03-18 2011-03-18 Semipolarer halbleiterkristall und verfahren zur herstellung desselben

Publications (1)

Publication Number Publication Date
PL2414567T3 true PL2414567T3 (pl) 2014-04-30

Family

ID=43828177

Family Applications (1)

Application Number Title Priority Date Filing Date
PL11709883T PL2414567T3 (pl) 2010-03-18 2011-03-18 Semipolarny kryształ półprzewodnika i sposób jego wytwarzania

Country Status (6)

Country Link
US (1) US8536030B2 (de)
EP (1) EP2414567B1 (de)
JP (1) JP5810105B2 (de)
DE (1) DE102010011895B4 (de)
PL (1) PL2414567T3 (de)
WO (1) WO2011113605A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4396816B2 (ja) * 2003-10-17 2010-01-13 日立電線株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
TWI425666B (zh) * 2011-04-27 2014-02-01 Univ Nat Central Growth of semi - polarized nitrides
EP2770089A4 (de) * 2011-10-21 2015-09-02 Mitsubishi Chem Corp Verfahren zur herstellung eines nitridhalbleiterkristalls aus einem metall der gruppe 13 des periodensystems sowie in diesem verfahren hergestellter nitridhalbleiterkristall aus einem metall der gruppe 13 des periodensystems
US10435812B2 (en) 2012-02-17 2019-10-08 Yale University Heterogeneous material integration through guided lateral growth
GB2502818A (en) * 2012-06-08 2013-12-11 Nanogan Ltd Epitaxial growth of semiconductor material such as Gallium Nitride on oblique angled nano or micro-structures
KR101504731B1 (ko) * 2012-11-30 2015-03-23 주식회사 소프트에피 3족 질화물 반도체 적층체
WO2014136602A1 (ja) * 2013-03-08 2014-09-12 国立大学法人山口大学 窒化ガリウム結晶自立基板の製造方法
DE102013208223B4 (de) 2013-05-06 2021-09-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines optoelektronischen Bauelements
KR20150031122A (ko) * 2013-09-13 2015-03-23 현대자동차주식회사 반도체 소자의 제조 방법
US9978589B2 (en) 2014-04-16 2018-05-22 Yale University Nitrogen-polar semipolar and gallium-polar semipolar GaN layers and devices on sapphire substrates
CN106233429B (zh) * 2014-04-16 2019-06-18 耶鲁大学 获得平坦的半极性氮化镓表面的方法
FR3021454B1 (fr) * 2014-05-20 2019-12-13 Centre National De La Recherche Scientifique (Cnrs) Procede de fabrication d'un materiau semi-conducteur incluant une couche de nitrure d'element iii semi-polaire
JP2016100593A (ja) * 2014-11-26 2016-05-30 株式会社Flosfia 結晶性積層構造体
JP7344426B2 (ja) * 2014-11-26 2023-09-14 株式会社Flosfia 結晶性積層構造体
JP6945119B2 (ja) * 2014-11-26 2021-10-06 株式会社Flosfia 結晶性積層構造体およびその製造方法
JP6638152B2 (ja) * 2015-02-25 2020-01-29 株式会社Flosfia 蛍光体組成物の製造方法および発光装置
DE102015109761B4 (de) * 2015-06-18 2022-01-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Nitrid-Halbleiterbauelements und Nitrid-Halbleiterbauelement
FR3037711A1 (fr) * 2015-06-18 2016-12-23 Commissariat Energie Atomique Procede permettant d'obtenir sur un substrat cristallin une couche semi-polaire de nitrure obtenu avec l'un au moins parmi les materiaux suivants : gallium (ga), indium (in) et aluminium (al)
KR20190038639A (ko) 2016-08-12 2019-04-08 예일 유니버시티 성장 동안 질소 극성 패시트를 제거함으로써 외래 기판 상에 성장된 적층 무결함 반극성 및 비극성 GaN
JP6778579B2 (ja) * 2016-10-18 2020-11-04 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法
US10697090B2 (en) * 2017-06-23 2020-06-30 Panasonic Intellectual Property Management Co., Ltd. Thin-film structural body and method for fabricating thereof
EP3556911A1 (de) * 2018-04-19 2019-10-23 Comadur S.A. Strukturierungsverfahren eines schmuckmotivs oder technischen motivs in einem gegenstand, der aus einem zumindest teilweise transparenten amorphen, halbkristallinen oder kristallinen material hergestellt ist
JP7108783B2 (ja) * 2019-03-28 2022-07-28 日本碍子株式会社 半導体膜
CN110112266B (zh) * 2019-05-22 2020-04-28 湘能华磊光电股份有限公司 Led外延片衬底结构及制作方法
CN110504301A (zh) * 2019-09-09 2019-11-26 南方科技大学 一种iii族氮化物晶体管外延结构和晶体管器件
US11145507B2 (en) * 2019-12-16 2021-10-12 Wafer Works Corporation Method of forming gallium nitride film over SOI substrate
FR3118306B1 (fr) * 2020-12-22 2023-05-05 Commissariat Energie Atomique Procédé de réalisation d’un dispositif optoélectronique comportant des LED à base de nitrure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101145753B1 (ko) * 2005-03-10 2012-05-16 재팬 사이언스 앤드 테크놀로지 에이젼시 평면의 반극성 갈륨 질화물의 성장을 위한 기술
KR100809209B1 (ko) * 2006-04-25 2008-02-29 삼성전기주식회사 비극성 ｍ면 질화물 반도체 제조방법
JP5353113B2 (ja) * 2008-01-29 2013-11-27 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
JP5392855B2 (ja) * 2008-08-25 2014-01-22 国立大学法人山口大学 半導体基板及びその製造方法

Also Published As

Publication number Publication date
WO2011113605A1 (de) 2011-09-22
US20110227198A1 (en) 2011-09-22
EP2414567B1 (de) 2013-11-20
US8536030B2 (en) 2013-09-17
JP2013522152A (ja) 2013-06-13
JP5810105B2 (ja) 2015-11-11
EP2414567A1 (de) 2012-02-08
DE102010011895A1 (de) 2011-09-22
DE102010011895B4 (de) 2013-07-25

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