PL2294241T3 - Sposób wytwarzania tarczy tlenkowej do rozpylania jonowego, zawierającej pierwszą i drugą fazę - Google Patents

Sposób wytwarzania tarczy tlenkowej do rozpylania jonowego, zawierającej pierwszą i drugą fazę

Info

Publication number
PL2294241T3
PL2294241T3 PL09793942T PL09793942T PL2294241T3 PL 2294241 T3 PL2294241 T3 PL 2294241T3 PL 09793942 T PL09793942 T PL 09793942T PL 09793942 T PL09793942 T PL 09793942T PL 2294241 T3 PL2294241 T3 PL 2294241T3
Authority
PL
Poland
Prior art keywords
phase
metal
oxide
sputter target
manufacture
Prior art date
Application number
PL09793942T
Other languages
English (en)
Inventor
Hilde Delrue
Holsbeke Johnny Van
Nuno Jorge Marcolino Carvalho
Bosscher Wilmert De
Original Assignee
Bekaert Advanced Coatings
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40092032&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=PL2294241(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Bekaert Advanced Coatings filed Critical Bekaert Advanced Coatings
Publication of PL2294241T3 publication Critical patent/PL2294241T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
PL09793942T 2008-07-08 2009-07-07 Sposób wytwarzania tarczy tlenkowej do rozpylania jonowego, zawierającej pierwszą i drugą fazę PL2294241T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08159926 2008-07-08
EP09793942A EP2294241B1 (en) 2008-07-08 2009-07-07 A method to manufacture an oxide sputter target comprising a first and second phase
PCT/EP2009/058593 WO2010003947A1 (en) 2008-07-08 2009-07-07 A method to manufacture an oxide sputter target comprising a first and second phase

Publications (1)

Publication Number Publication Date
PL2294241T3 true PL2294241T3 (pl) 2012-05-31

Family

ID=40092032

Family Applications (1)

Application Number Title Priority Date Filing Date
PL09793942T PL2294241T3 (pl) 2008-07-08 2009-07-07 Sposób wytwarzania tarczy tlenkowej do rozpylania jonowego, zawierającej pierwszą i drugą fazę

Country Status (9)

Country Link
US (1) US20110100809A1 (pl)
EP (1) EP2294241B1 (pl)
JP (1) JP5798482B2 (pl)
KR (2) KR20160098513A (pl)
CN (1) CN102089455A (pl)
AT (1) ATE546562T1 (pl)
ES (1) ES2379518T3 (pl)
PL (1) PL2294241T3 (pl)
WO (1) WO2010003947A1 (pl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103814151B (zh) 2011-06-27 2016-01-20 梭莱有限公司 Pvd靶材及其铸造方法
TWI623634B (zh) 2011-11-08 2018-05-11 塔沙Ｓｍｄ公司 具有特殊表面處理和良好顆粒性能之矽濺鍍靶及其製造方法
KR101485305B1 (ko) * 2012-07-13 2015-01-21 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 소결체 및 아모르퍼스막
WO2014023614A1 (en) * 2012-08-08 2014-02-13 Umicore Ito ceramic sputtering targets with reduced in2o3 contents and method of producing it
KR20150003713U (ko) * 2013-02-01 2015-10-12 어플라이드 머티어리얼스, 인코포레이티드 도핑된 아연 타겟
BE1026850B1 (nl) 2018-11-12 2020-07-07 Soleras Advanced Coatings Bv Geleidende sputter doelen met silicium, zirkonium en zuurstof
BE1028482B1 (nl) 2020-07-14 2022-02-14 Soleras Advanced Coatings Bv Vervaardiging en hervullen van sputterdoelen
BE1028481B1 (nl) 2020-07-14 2022-02-14 Soleras Advanced Coatings Bv Sputterdoel met grote densiteit
CN115747744B (zh) * 2023-01-06 2023-04-21 中国科学院理化技术研究所 一种氧化镓铟薄膜及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4407774C1 (de) * 1994-03-09 1995-04-20 Leybold Materials Gmbh Target für die Kathodenzerstäubung zur Herstellung transparenter, leitfähiger Schichten und Verfahren zu seiner Herstellung
JPH08246141A (ja) * 1995-03-03 1996-09-24 Sumitomo Metal Mining Co Ltd 酸化物焼結体
JPH08246142A (ja) * 1995-03-03 1996-09-24 Sumitomo Metal Mining Co Ltd 酸化物焼結体
JPH11229126A (ja) * 1998-02-13 1999-08-24 Mitsubishi Materials Corp 誘電体薄膜形成用スパッタリングターゲット材およびその製造方法
AU4515201A (en) * 1999-12-03 2001-06-18 N.V. Bekaert S.A. Improved sputtering target and methods of making and using same
JP2003239067A (ja) * 2002-02-18 2003-08-27 Ushio Inc Ｄｃスパッタ蒸着用ターゲット
US20070137999A1 (en) * 2004-03-15 2007-06-21 Bekaert Advanced Coatings Method to reduce thermal stresses in a sputter target
CA2626073A1 (en) * 2005-11-01 2007-05-10 Cardinal Cg Company Reactive sputter deposition processes and equipment
JP4982423B2 (ja) * 2008-04-24 2012-07-25 株式会社日立製作所 酸化亜鉛薄膜形成用スパッタターゲットと、それを用いて得られる酸化亜鉛薄膜を有する表示素子及び太陽電池
ES2377225T3 (es) * 2008-09-19 2012-03-23 OERLIKON TRADING AG, TRÜBBACH Método para producir capas de óxido metálico mediante vaporización por arco

Also Published As

Publication number Publication date
US20110100809A1 (en) 2011-05-05
KR20110033186A (ko) 2011-03-30
JP5798482B2 (ja) 2015-10-21
WO2010003947A1 (en) 2010-01-14
CN102089455A (zh) 2011-06-08
EP2294241A1 (en) 2011-03-16
ES2379518T3 (es) 2012-04-26
ATE546562T1 (de) 2012-03-15
KR20160098513A (ko) 2016-08-18
EP2294241B1 (en) 2012-02-22
JP2011527384A (ja) 2011-10-27

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