PL117693B1 - Semiconductor device adapted to be switched over by voltage fadingm naprjazheniem - Google Patents

Semiconductor device adapted to be switched over by voltage fadingm naprjazheniem

Info

Publication number
PL117693B1
PL117693B1 PL1977201799A PL20179977A PL117693B1 PL 117693 B1 PL117693 B1 PL 117693B1 PL 1977201799 A PL1977201799 A PL 1977201799A PL 20179977 A PL20179977 A PL 20179977A PL 117693 B1 PL117693 B1 PL 117693B1
Authority
PL
Poland
Prior art keywords
region
thyristor
emitter
voltage
current
Prior art date
Application number
PL1977201799A
Other languages
English (en)
Polish (pl)
Other versions
PL201799A1 (pl
Inventor
Maurice H Hanes
Earl S Schlegel
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of PL201799A1 publication Critical patent/PL201799A1/xx
Publication of PL117693B1 publication Critical patent/PL117693B1/pl

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/211Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/80PNPN diodes, e.g. Shockley diodes or break-over diodes

Landscapes

  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Rectifiers (AREA)
PL1977201799A 1976-10-29 1977-10-28 Semiconductor device adapted to be switched over by voltage fadingm naprjazheniem PL117693B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73679576A 1976-10-29 1976-10-29

Publications (2)

Publication Number Publication Date
PL201799A1 PL201799A1 (pl) 1978-05-08
PL117693B1 true PL117693B1 (en) 1981-08-31

Family

ID=24961330

Family Applications (1)

Application Number Title Priority Date Filing Date
PL1977201799A PL117693B1 (en) 1976-10-29 1977-10-28 Semiconductor device adapted to be switched over by voltage fadingm naprjazheniem

Country Status (13)

Country Link
JP (1) JPS5356979A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU516308B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE859992A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BR (1) BR7707015A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1104726A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2748528A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2393432A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1592877A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
HK (1) HK64384A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IN (1) IN148845B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
PL (1) PL117693B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE7712091L (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ZA (1) ZA775629B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3000804A1 (de) * 1980-01-11 1981-07-16 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Thyristor mit kurzgeschlossenem emitter fuer kurze stromflussdauer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573572A (en) * 1968-09-23 1971-04-06 Int Rectifier Corp Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current
US3731162A (en) * 1969-09-25 1973-05-01 Tokyo Shibaura Electric Co Semiconductor switching device
FR2144581B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-07-06 1976-03-19 Silec Semi Conducteurs
DE2141627C3 (de) * 1971-08-19 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US3914783A (en) * 1971-10-01 1975-10-21 Hitachi Ltd Multi-layer semiconductor device
DE2210386A1 (de) * 1972-03-03 1973-09-06 Siemens Ag Thyristor
GB1425651A (en) * 1972-04-03 1976-02-18 Motorola Inc Channel firing thyristor
DE2346256C3 (de) * 1973-09-13 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Thyristor
JPS5413959B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-10-17 1979-06-04
JPS5927108B2 (ja) * 1975-02-07 1984-07-03 株式会社日立製作所 半導体制御整流装置

Also Published As

Publication number Publication date
CA1104726A (en) 1981-07-07
SE7712091L (sv) 1978-04-30
GB1592877A (en) 1981-07-08
BR7707015A (pt) 1978-07-18
DE2748528A1 (de) 1978-05-03
ZA775629B (en) 1978-08-30
FR2393432A1 (fr) 1978-12-29
FR2393432B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1983-08-26
BE859992A (fr) 1978-04-21
IN148845B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-06-27
HK64384A (en) 1984-08-24
JPS5649459B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-11-21
JPS5356979A (en) 1978-05-23
PL201799A1 (pl) 1978-05-08
AU516308B2 (en) 1981-05-28
AU2974177A (en) 1979-04-26

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