PH30835A - Multilayer magnetoresistive sensor. - Google Patents

Multilayer magnetoresistive sensor.

Info

Publication number
PH30835A
PH30835A PH49556A PH49556A PH30835A PH 30835 A PH30835 A PH 30835A PH 49556 A PH49556 A PH 49556A PH 49556 A PH49556 A PH 49556A PH 30835 A PH30835 A PH 30835A
Authority
PH
Philippines
Prior art keywords
magnetoresistive
sensing element
layers
elements
ferromagnetic
Prior art date
Application number
PH49556A
Other languages
English (en)
Inventor
Kevin R Coffey
Todd L Hylton
Robert E Fontana
James K Howard
Michael A Parker
Ching H Tsong
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of PH30835A publication Critical patent/PH30835A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
PH49556A 1993-12-23 1994-12-14 Multilayer magnetoresistive sensor. PH30835A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/173,590 US5452163A (en) 1993-12-23 1993-12-23 Multilayer magnetoresistive sensor

Publications (1)

Publication Number Publication Date
PH30835A true PH30835A (en) 1997-11-03

Family

ID=22632713

Family Applications (1)

Application Number Title Priority Date Filing Date
PH49556A PH30835A (en) 1993-12-23 1994-12-14 Multilayer magnetoresistive sensor.

Country Status (13)

Country Link
US (1) US5452163A (zh)
EP (1) EP0660127B1 (zh)
JP (1) JP2784461B2 (zh)
KR (1) KR0146012B1 (zh)
CN (1) CN1068689C (zh)
AT (1) ATE221999T1 (zh)
BR (1) BR9405159A (zh)
CA (1) CA2134711A1 (zh)
DE (1) DE69431149T2 (zh)
MY (1) MY116219A (zh)
PH (1) PH30835A (zh)
SG (1) SG42849A1 (zh)
TW (1) TW277132B (zh)

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US5737157A (en) * 1996-10-09 1998-04-07 International Business Machines Corporation Disk drive with a thermal asperity reduction circuitry using a magnetoresistive sensor
US5880915A (en) 1996-10-21 1999-03-09 International Business Machines Corporation Crack resistant magnetic write head
WO1998038792A1 (en) * 1997-02-28 1998-09-03 University And Community College System Of Nevada Magnetoresistive scanning system
US5923505A (en) * 1997-03-17 1999-07-13 Read-Rite Corporation Magnetoresistive sensor having a pinned soft magnetic layer
US6440750B1 (en) 1997-06-10 2002-08-27 Agere Systems Guardian Corporation Method of making integrated circuit having a micromagnetic device
US6191495B1 (en) * 1997-06-10 2001-02-20 Lucent Technologies Inc. Micromagnetic device having an anisotropic ferromagnetic core and method of manufacture therefor
US5867351A (en) * 1997-07-25 1999-02-02 International Business Machines Corporation Spin valve read head with low moment, high coercivity pinning layer
JPH1196515A (ja) * 1997-09-18 1999-04-09 Fujitsu Ltd Ｇｍｒ磁気センサ、その製造方法、および磁気ヘッド
WO1999022368A2 (en) * 1997-10-29 1999-05-06 Koninklijke Philips Electronics N.V. Magnetic field sensor comprising a spin-tunnel junction
US6147900A (en) * 1997-11-06 2000-11-14 Nonvolatile Electronics, Incorporated Spin dependent tunneling memory
US6337215B1 (en) 1997-12-01 2002-01-08 International Business Machines Corporation Magnetic particles having two antiparallel ferromagnetic layers and attached affinity recognition molecules
US6239595B1 (en) 1998-05-13 2001-05-29 Mitsubishi Denki Kabushiki Kaisha Magnetic field sensing element
DE19854713B4 (de) * 1998-05-13 2005-03-10 Mitsubishi Electric Corp Magnetfeld-Erfassungselement
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US6178074B1 (en) * 1998-11-19 2001-01-23 International Business Machines Corporation Double tunnel junction with magnetoresistance enhancement layer
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US6600637B1 (en) * 1999-10-28 2003-07-29 Seagate Technology, L.L.C. Edge barrier to prevent spin valve sensor corrosion and improve long term reliability
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US7158353B2 (en) * 2003-11-06 2007-01-02 Seagate Technology Llc Magnetoresistive sensor having specular sidewall layers
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JP4538614B2 (ja) * 2007-10-12 2010-09-08 株式会社東芝 磁気抵抗効果素子の設計方法及び磁気ランダムアクセスメモリの設計方法
US8093892B2 (en) * 2008-07-24 2012-01-10 Infineon Technologies Ag System with 90 degree sense layer magnetic orientation
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CN104900800A (zh) * 2014-03-03 2015-09-09 北京嘉岳同乐极电子有限公司 用于磁敏传感器的gmr磁性纳米多层膜
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Also Published As

Publication number Publication date
KR950020420A (ko) 1995-07-24
DE69431149T2 (de) 2003-05-28
TW277132B (zh) 1996-06-01
KR0146012B1 (ko) 1998-10-15
BR9405159A (pt) 1995-08-01
ATE221999T1 (de) 2002-08-15
JP2784461B2 (ja) 1998-08-06
JPH07210832A (ja) 1995-08-11
US5452163A (en) 1995-09-19
CN1068689C (zh) 2001-07-18
CA2134711A1 (en) 1995-06-24
EP0660127B1 (en) 2002-08-07
DE69431149D1 (de) 2002-09-12
SG42849A1 (en) 1997-10-17
EP0660127A2 (en) 1995-06-28
MY116219A (en) 2003-12-31
EP0660127A3 (en) 1996-01-17
CN1122498A (zh) 1996-05-15

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