PH12018000465A1 - Photoresist stripper - Google Patents

Photoresist stripper Download PDF

Info

Publication number
PH12018000465A1
PH12018000465A1 PH12018000465A PH12018000465A PH12018000465A1 PH 12018000465 A1 PH12018000465 A1 PH 12018000465A1 PH 12018000465 A PH12018000465 A PH 12018000465A PH 12018000465 A PH12018000465 A PH 12018000465A PH 12018000465 A1 PH12018000465 A1 PH 12018000465A1
Authority
PH
Philippines
Prior art keywords
solution
copper
amount
quaternary ammonium
corrosion inhibitor
Prior art date
Application number
PH12018000465A
Other languages
English (en)
Inventor
Richard Dalton Peters
Michael T Phenis
Original Assignee
Versum Mat Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/222,248 external-priority patent/US11353794B2/en
Application filed by Versum Mat Us Llc filed Critical Versum Mat Us Llc
Publication of PH12018000465A1 publication Critical patent/PH12018000465A1/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/426Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
PH12018000465A 2017-12-22 2018-12-21 Photoresist stripper PH12018000465A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762609562P 2017-12-22 2017-12-22
US16/222,248 US11353794B2 (en) 2017-12-22 2018-12-17 Photoresist stripper

Publications (1)

Publication Number Publication Date
PH12018000465A1 true PH12018000465A1 (en) 2019-07-01

Family

ID=67023372

Family Applications (1)

Application Number Title Priority Date Filing Date
PH12018000465A PH12018000465A1 (en) 2017-12-22 2018-12-21 Photoresist stripper

Country Status (5)

Country Link
JP (1) JP6852044B2 (zh)
KR (1) KR102238062B1 (zh)
CN (1) CN109960116B (zh)
PH (1) PH12018000465A1 (zh)
TW (1) TWI692679B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3752887B1 (en) * 2018-02-14 2022-04-13 Merck Patent GmbH Photoresist remover compositions
WO2021020410A1 (ja) 2019-07-30 2021-02-04 三菱瓦斯化学株式会社 フォトレジスト除去用組成物
CN112558434B (zh) * 2020-12-22 2023-03-07 江苏奥首材料科技有限公司 一种光刻胶清洗剂组合物

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09319098A (ja) * 1996-05-27 1997-12-12 Rohm Co Ltd レジスト膜用剥離液
US6368421B1 (en) * 1998-07-10 2002-04-09 Clariant Finance (Bvi) Limited Composition for stripping photoresist and organic materials from substrate surfaces
JP2001022096A (ja) * 1999-07-02 2001-01-26 Nippon Zeon Co Ltd ポジ型レジスト用剥離液
CN100338530C (zh) * 2001-11-02 2007-09-19 三菱瓦斯化学株式会社 剥离抗蚀剂的方法
US7442675B2 (en) * 2003-06-18 2008-10-28 Tokyo Ohka Kogyo Co., Ltd. Cleaning composition and method of cleaning semiconductor substrate
US7632796B2 (en) * 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US20070243773A1 (en) * 2005-10-28 2007-10-18 Phenis Michael T Dynamic multi-purpose composition for the removal of photoresists and method for its use
KR20080037882A (ko) * 2006-10-27 2008-05-02 (주)대우건설 콘크리트 방식제
JP4499751B2 (ja) * 2006-11-21 2010-07-07 エア プロダクツ アンド ケミカルズ インコーポレイテッド フォトレジスト、エッチ残留物及びbarcを除去するための配合物及び同配合物を含む方法
US7655608B2 (en) * 2007-08-03 2010-02-02 Dynaloy, Llc Reduced metal etch rates using stripper solutions containing a copper salt
US8551682B2 (en) * 2007-08-15 2013-10-08 Dynaloy, Llc Metal conservation with stripper solutions containing resorcinol
WO2009058277A1 (en) * 2007-10-29 2009-05-07 Ekc Technology, Inc. Novel nitrile and amidoxime compounds and methods of preparation
TWI450052B (zh) * 2008-06-24 2014-08-21 Dynaloy Llc 用於後段製程操作有效之剝離溶液
CN101750914A (zh) * 2008-12-05 2010-06-23 安集微电子(上海)有限公司 一种光刻胶清洗剂组合物
CN102200700B (zh) * 2011-06-08 2012-08-22 绵阳艾萨斯电子材料有限公司 剥离液及其制备方法与应用
US8987181B2 (en) * 2011-11-08 2015-03-24 Dynaloy, Llc Photoresist and post etch residue cleaning solution
CN103713476B (zh) * 2012-10-08 2017-12-12 弗萨姆材料美国有限责任公司 用于除去厚膜抗蚀剂的剥离和清除组合物
US20140100151A1 (en) * 2012-10-08 2014-04-10 Air Products And Chemicals Inc. Stripping and Cleaning Compositions for Removal of Thick Film Resist
TW201534586A (zh) * 2013-06-11 2015-09-16 Orion Corp 新穎cyp17抑制劑/抗雄激素劑
CN104345582A (zh) * 2013-08-02 2015-02-11 安集微电子科技(上海)有限公司 一种用于去除光阻残留物的清洗液
TWI608311B (zh) * 2016-03-25 2017-12-11 達興材料股份有限公司 一種光阻脫除組成物及一種利用該光阻脫除組成物進行微影製程的電子元件的製造方法

Also Published As

Publication number Publication date
CN109960116B (zh) 2022-10-04
KR102238062B1 (ko) 2021-04-07
JP6852044B2 (ja) 2021-03-31
KR20190076904A (ko) 2019-07-02
CN109960116A (zh) 2019-07-02
TW201928536A (zh) 2019-07-16
TWI692679B (zh) 2020-05-01
JP2019113848A (ja) 2019-07-11

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