NO995827L - Mønsterlegging med tynnfilm- og laminatteknikk - Google Patents
Mønsterlegging med tynnfilm- og laminatteknikkInfo
- Publication number
- NO995827L NO995827L NO995827A NO995827A NO995827L NO 995827 L NO995827 L NO 995827L NO 995827 A NO995827 A NO 995827A NO 995827 A NO995827 A NO 995827A NO 995827 L NO995827 L NO 995827L
- Authority
- NO
- Norway
- Prior art keywords
- thin film
- laminate technique
- pattern layering
- layering
- pattern
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
- H05K1/024—Dielectric details, e.g. changing the dielectric material around a transmission line
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
- H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/951—Lift-off
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Formation Of Insulating Films (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Drying Of Semiconductors (AREA)
- Waveguides (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33786898A JP3368852B2 (ja) | 1998-11-27 | 1998-11-27 | 積層パターンの形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
NO995827D0 NO995827D0 (no) | 1999-11-26 |
NO995827L true NO995827L (no) | 2000-05-29 |
Family
ID=18312753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO995827A NO995827L (no) | 1998-11-27 | 1999-11-26 | Mønsterlegging med tynnfilm- og laminatteknikk |
Country Status (7)
Country | Link |
---|---|
US (1) | US6156672A (no) |
EP (1) | EP1005073A1 (no) |
JP (1) | JP3368852B2 (no) |
KR (1) | KR100442700B1 (no) |
CN (1) | CN1188902C (no) |
CA (1) | CA2290764C (no) |
NO (1) | NO995827L (no) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6291283B1 (en) * | 1998-11-09 | 2001-09-18 | Texas Instruments Incorporated | Method to form silicates as high dielectric constant materials |
JP2000208508A (ja) | 1999-01-13 | 2000-07-28 | Texas Instr Inc <Ti> | 珪酸塩高誘電率材料の真空蒸着 |
JP3520853B2 (ja) * | 2001-01-26 | 2004-04-19 | 株式会社村田製作所 | 弾性表面波素子及びその製造方法 |
DE10114956C2 (de) | 2001-03-27 | 2003-06-18 | Infineon Technologies Ag | Verfahren zum Herstellen einer dielektrischen Schicht als Isolatorschicht für einen Grabenkondensator |
EP1260863A1 (en) * | 2001-05-23 | 2002-11-27 | Scandinavian Micro Biodevices | Micropatterning of plasma polymerized coatings |
JP2005081335A (ja) * | 2003-09-11 | 2005-03-31 | Seiko Epson Corp | パターン形成方法、導電性薄膜、電気光学装置、電子機器 |
JP4408787B2 (ja) * | 2004-10-19 | 2010-02-03 | 株式会社神戸製鋼所 | 絶縁膜及びその製造方法、並びに絶縁膜を備えた電子デバイス |
JP2007144992A (ja) * | 2005-10-28 | 2007-06-14 | Fujifilm Corp | 凹凸構造体とその製造方法、圧電素子、インクジェット式記録ヘッド、インクジェット式記録装置 |
US8000841B2 (en) * | 2005-12-30 | 2011-08-16 | Rosemount Inc. | Power management in a process transmitter |
US8623737B2 (en) * | 2006-03-31 | 2014-01-07 | Intel Corporation | Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same |
US7816842B2 (en) * | 2007-03-26 | 2010-10-19 | Fujifilm Corporation | Patterned inorganic film formed of an inorganic material on a metal film having a surface which includes a plurality of surface-oxidized areas, piezoelectric device having the patterned inorganic film, and process for producing the inorganic film |
WO2008141481A1 (fr) | 2007-05-24 | 2008-11-27 | Princo Corp. | Structure et procédé de fabrication d'un câblage métallique sur une carte multicouches |
TWI354523B (en) * | 2007-05-25 | 2011-12-11 | Princo Corp | Method for manufacturing metal lines in multi-laye |
US8815333B2 (en) | 2007-12-05 | 2014-08-26 | Princo Middle East Fze | Manufacturing method of metal structure in multi-layer substrate |
JP5596312B2 (ja) * | 2009-08-04 | 2014-09-24 | スタンレー電気株式会社 | 誘電体薄膜デバイスの製造方法 |
US9613848B2 (en) | 2015-02-12 | 2017-04-04 | Infineon Technologies Ag | Dielectric structures with negative taper and methods of formation thereof |
CN108153106A (zh) * | 2017-12-27 | 2018-06-12 | 深圳市华星光电技术有限公司 | 光罩及图案化方法 |
CN113242843A (zh) * | 2019-12-17 | 2021-08-10 | 深圳市大富科技股份有限公司 | 一种陶瓷材料及其制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4284706A (en) * | 1979-12-03 | 1981-08-18 | International Business Machines Corporation | Lithographic resist composition for a lift-off process |
JPS61108172A (ja) * | 1984-11-01 | 1986-05-26 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
US5190892A (en) * | 1988-08-11 | 1993-03-02 | Oki Electric Industry Co., Ltd. | Method for forming pattern using lift-off |
JPH02203511A (ja) * | 1989-02-02 | 1990-08-13 | Matsushita Electric Ind Co Ltd | 薄膜コンデンサの形成方法 |
JP2537563Y2 (ja) * | 1989-03-20 | 1997-06-04 | 東横化学 株式会社 | 縦型減圧気相成長装置 |
JP2570607B2 (ja) * | 1993-12-20 | 1997-01-08 | 日本電気株式会社 | キャパシタの製造方法 |
JPH07300684A (ja) * | 1994-04-28 | 1995-11-14 | Matsushita Electric Ind Co Ltd | 金属薄膜パターンの形成方法 |
-
1998
- 1998-11-27 JP JP33786898A patent/JP3368852B2/ja not_active Expired - Fee Related
-
1999
- 1999-11-19 US US09/443,671 patent/US6156672A/en not_active Expired - Fee Related
- 1999-11-23 EP EP99123371A patent/EP1005073A1/en not_active Ceased
- 1999-11-25 KR KR10-1999-0052686A patent/KR100442700B1/ko not_active IP Right Cessation
- 1999-11-26 CN CNB991228375A patent/CN1188902C/zh not_active Expired - Fee Related
- 1999-11-26 NO NO995827A patent/NO995827L/no not_active Application Discontinuation
- 1999-11-26 CA CA002290764A patent/CA2290764C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
NO995827D0 (no) | 1999-11-26 |
CN1255738A (zh) | 2000-06-07 |
JP3368852B2 (ja) | 2003-01-20 |
CA2290764C (en) | 2004-02-03 |
CA2290764A1 (en) | 2000-05-27 |
CN1188902C (zh) | 2005-02-09 |
KR100442700B1 (ko) | 2004-08-02 |
EP1005073A1 (en) | 2000-05-31 |
JP2000164575A (ja) | 2000-06-16 |
US6156672A (en) | 2000-12-05 |
KR20000047722A (ko) | 2000-07-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FC2A | Withdrawal, rejection or dismissal of laid open patent application |