NO990598D0 - Kortslutningsbeskyttelse for en halvlederbryter - Google Patents

Kortslutningsbeskyttelse for en halvlederbryter

Info

Publication number
NO990598D0
NO990598D0 NO990598A NO990598A NO990598D0 NO 990598 D0 NO990598 D0 NO 990598D0 NO 990598 A NO990598 A NO 990598A NO 990598 A NO990598 A NO 990598A NO 990598 D0 NO990598 D0 NO 990598D0
Authority
NO
Norway
Prior art keywords
field effect
effect transistor
control pulse
pct
gate potential
Prior art date
Application number
NO990598A
Other languages
English (en)
Other versions
NO990598L (no
NO323456B1 (no
Inventor
Martti Sairanen
Original Assignee
Ahlstroem Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ahlstroem Oy filed Critical Ahlstroem Oy
Publication of NO990598D0 publication Critical patent/NO990598D0/no
Publication of NO990598L publication Critical patent/NO990598L/no
Publication of NO323456B1 publication Critical patent/NO323456B1/no

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch

Landscapes

  • Electronic Switches (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Power Conversion In General (AREA)
  • Control Of Voltage And Current In General (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NO19990598A 1997-06-10 1999-02-09 Kortslutningsbeskyttelse for en halvlederbryter NO323456B1 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI972455A FI102993B1 (fi) 1997-06-10 1997-06-10 Puolijohdekytkimen oikosulkusuoja
PCT/FI1998/000495 WO1998059421A1 (en) 1997-06-10 1998-06-09 Short circuit protection for a semiconductor switch

Publications (3)

Publication Number Publication Date
NO990598D0 true NO990598D0 (no) 1999-02-09
NO990598L NO990598L (no) 1999-02-09
NO323456B1 NO323456B1 (no) 2007-05-14

Family

ID=8549015

Family Applications (1)

Application Number Title Priority Date Filing Date
NO19990598A NO323456B1 (no) 1997-06-10 1999-02-09 Kortslutningsbeskyttelse for en halvlederbryter

Country Status (12)

Country Link
US (1) US6160693A (no)
EP (1) EP0943178B1 (no)
JP (1) JP2000517148A (no)
AT (1) ATE224614T1 (no)
DE (1) DE69808044T2 (no)
DK (1) DK0943178T3 (no)
ES (1) ES2184273T3 (no)
FI (1) FI102993B1 (no)
NO (1) NO323456B1 (no)
PL (1) PL192055B1 (no)
RU (1) RU2212098C2 (no)
WO (1) WO1998059421A1 (no)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4531500B2 (ja) * 2004-01-06 2010-08-25 三菱電機株式会社 半導体装置および半導体装置モジュール
US7457092B2 (en) * 2005-12-07 2008-11-25 Alpha & Omega Semiconductor, Lld. Current limited bilateral MOSFET switch with reduced switch resistance and lower manufacturing cost
DE102006022158A1 (de) * 2006-05-12 2007-11-15 Beckhoff Automation Gmbh Leistungsschaltung mit Kurzschlussschutzschaltung
GB2471223B (en) * 2008-04-16 2013-01-23 Bourns Inc Current limiting surge protection device.
US20140029152A1 (en) * 2012-03-30 2014-01-30 Semisouth Laboratories, Inc. Solid-state circuit breakers
ITUB20159684A1 (it) 2015-12-22 2017-06-22 St Microelectronics Srl Interruttore elettronico, dispositivo e procedimento corrispondenti
DE102017101452A1 (de) 2017-01-25 2018-07-26 Eaton Industries (Austria) Gmbh Niederspannungs-Schutzschaltgerät
US11519954B2 (en) 2019-08-27 2022-12-06 Analog Devices International Unlimited Company Apparatus and method to achieve fast-fault detection on power semiconductor devices
CN114152857A (zh) * 2021-12-07 2022-03-08 华东师范大学 一种二维材料场效应晶体管失效样品的制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3243467C2 (de) * 1982-11-24 1986-02-20 Siemens AG, 1000 Berlin und 8000 München Einrichtung zum Schutz eines Schalttransistors
US4626954A (en) * 1984-09-06 1986-12-02 Eaton Corporation Solid state power controller with overload protection
US4893211A (en) * 1985-04-01 1990-01-09 Motorola, Inc. Method and circuit for providing adjustable control of short circuit current through a semiconductor device
US4914542A (en) * 1988-12-27 1990-04-03 Westinghouse Electric Corp. Current limited remote power controller
DE4113258A1 (de) * 1991-04-23 1992-10-29 Siemens Ag Leistungssteuerschaltung mit kurzschlussschutzschaltung
US5257155A (en) * 1991-08-23 1993-10-26 Motorola, Inc. Short-circuit proof field effect transistor
US5485341A (en) * 1992-09-21 1996-01-16 Kabushiki Kaisha Toshiba Power transistor overcurrent protection circuit
GB9223773D0 (en) * 1992-11-12 1992-12-23 Raychem Ltd Switching arrangement
EP0766395A3 (de) * 1995-09-27 1999-04-21 Siemens Aktiengesellschaft Leistungstransistor mit Kurzschlussschutz
KR0171713B1 (ko) * 1995-12-12 1999-05-01 이형도 전력용 반도체 트랜지스터의 과전류 보호회로
US5959464A (en) * 1996-09-03 1999-09-28 Motorola Inc. Loss-less load current sensing driver and method therefor
US5808457A (en) * 1997-01-23 1998-09-15 Ford Motor Company Transistor overload protection assembly and method with time-varying power source

Also Published As

Publication number Publication date
DK0943178T3 (da) 2003-01-27
PL192055B1 (pl) 2006-08-31
EP0943178B1 (en) 2002-09-18
DE69808044D1 (de) 2002-10-24
FI972455A0 (fi) 1997-06-10
EP0943178A1 (en) 1999-09-22
NO990598L (no) 1999-02-09
FI972455A (fi) 1998-12-11
NO323456B1 (no) 2007-05-14
US6160693A (en) 2000-12-12
PL331418A1 (en) 1999-07-19
FI102993B (fi) 1999-03-31
WO1998059421A1 (en) 1998-12-30
ES2184273T3 (es) 2003-04-01
DE69808044T2 (de) 2003-02-06
ATE224614T1 (de) 2002-10-15
RU2212098C2 (ru) 2003-09-10
JP2000517148A (ja) 2000-12-19
FI102993B1 (fi) 1999-03-31

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Legal Events

Date Code Title Description
MM1K Lapsed by not paying the annual fees