ATE224614T1 - Schutz gegen kurzschluss für einen halbleiterschalter - Google Patents

Schutz gegen kurzschluss für einen halbleiterschalter

Info

Publication number
ATE224614T1
ATE224614T1 AT98925659T AT98925659T ATE224614T1 AT E224614 T1 ATE224614 T1 AT E224614T1 AT 98925659 T AT98925659 T AT 98925659T AT 98925659 T AT98925659 T AT 98925659T AT E224614 T1 ATE224614 T1 AT E224614T1
Authority
AT
Austria
Prior art keywords
field effect
effect transistor
control pulse
pct
gate potential
Prior art date
Application number
AT98925659T
Other languages
English (en)
Inventor
Martti Sairanen
Original Assignee
Lexel Finland Ab Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lexel Finland Ab Oy filed Critical Lexel Finland Ab Oy
Application granted granted Critical
Publication of ATE224614T1 publication Critical patent/ATE224614T1/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027Measuring means of, e.g. currents through or voltages across the switch

Landscapes

  • Electronic Switches (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Power Conversion In General (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Voltage And Current In General (AREA)
AT98925659T 1997-06-10 1998-06-09 Schutz gegen kurzschluss für einen halbleiterschalter ATE224614T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI972455A FI102993B (fi) 1997-06-10 1997-06-10 Puolijohdekytkimen oikosulkusuoja
PCT/FI1998/000495 WO1998059421A1 (en) 1997-06-10 1998-06-09 Short circuit protection for a semiconductor switch

Publications (1)

Publication Number Publication Date
ATE224614T1 true ATE224614T1 (de) 2002-10-15

Family

ID=8549015

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98925659T ATE224614T1 (de) 1997-06-10 1998-06-09 Schutz gegen kurzschluss für einen halbleiterschalter

Country Status (12)

Country Link
US (1) US6160693A (de)
EP (1) EP0943178B1 (de)
JP (1) JP2000517148A (de)
AT (1) ATE224614T1 (de)
DE (1) DE69808044T2 (de)
DK (1) DK0943178T3 (de)
ES (1) ES2184273T3 (de)
FI (1) FI102993B (de)
NO (1) NO323456B1 (de)
PL (1) PL192055B1 (de)
RU (1) RU2212098C2 (de)
WO (1) WO1998059421A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4531500B2 (ja) * 2004-01-06 2010-08-25 三菱電機株式会社 半導体装置および半導体装置モジュール
US7457092B2 (en) * 2005-12-07 2008-11-25 Alpha & Omega Semiconductor, Lld. Current limited bilateral MOSFET switch with reduced switch resistance and lower manufacturing cost
DE102006022158A1 (de) * 2006-05-12 2007-11-15 Beckhoff Automation Gmbh Leistungsschaltung mit Kurzschlussschutzschaltung
WO2009128942A1 (en) * 2008-04-16 2009-10-22 Bourns, Inc. Current limiting surge protection device
US20140029152A1 (en) * 2012-03-30 2014-01-30 Semisouth Laboratories, Inc. Solid-state circuit breakers
ITUB20159684A1 (it) 2015-12-22 2017-06-22 St Microelectronics Srl Interruttore elettronico, dispositivo e procedimento corrispondenti
DE102017101452A1 (de) 2017-01-25 2018-07-26 Eaton Industries (Austria) Gmbh Niederspannungs-Schutzschaltgerät
US11519954B2 (en) 2019-08-27 2022-12-06 Analog Devices International Unlimited Company Apparatus and method to achieve fast-fault detection on power semiconductor devices
CN114152857A (zh) * 2021-12-07 2022-03-08 华东师范大学 一种二维材料场效应晶体管失效样品的制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3243467C2 (de) * 1982-11-24 1986-02-20 Siemens AG, 1000 Berlin und 8000 München Einrichtung zum Schutz eines Schalttransistors
US4626954A (en) * 1984-09-06 1986-12-02 Eaton Corporation Solid state power controller with overload protection
US4893211A (en) * 1985-04-01 1990-01-09 Motorola, Inc. Method and circuit for providing adjustable control of short circuit current through a semiconductor device
US4914542A (en) * 1988-12-27 1990-04-03 Westinghouse Electric Corp. Current limited remote power controller
DE4113258A1 (de) * 1991-04-23 1992-10-29 Siemens Ag Leistungssteuerschaltung mit kurzschlussschutzschaltung
US5257155A (en) * 1991-08-23 1993-10-26 Motorola, Inc. Short-circuit proof field effect transistor
US5485341A (en) * 1992-09-21 1996-01-16 Kabushiki Kaisha Toshiba Power transistor overcurrent protection circuit
GB9223773D0 (en) * 1992-11-12 1992-12-23 Raychem Ltd Switching arrangement
EP0766395A3 (de) * 1995-09-27 1999-04-21 Siemens Aktiengesellschaft Leistungstransistor mit Kurzschlussschutz
KR0171713B1 (ko) * 1995-12-12 1999-05-01 이형도 전력용 반도체 트랜지스터의 과전류 보호회로
US5959464A (en) * 1996-09-03 1999-09-28 Motorola Inc. Loss-less load current sensing driver and method therefor
US5808457A (en) * 1997-01-23 1998-09-15 Ford Motor Company Transistor overload protection assembly and method with time-varying power source

Also Published As

Publication number Publication date
FI102993B1 (fi) 1999-03-31
NO990598D0 (no) 1999-02-09
DE69808044T2 (de) 2003-02-06
FI972455A0 (fi) 1997-06-10
US6160693A (en) 2000-12-12
FI972455A (fi) 1998-12-11
DE69808044D1 (de) 2002-10-24
RU2212098C2 (ru) 2003-09-10
PL331418A1 (en) 1999-07-19
PL192055B1 (pl) 2006-08-31
NO323456B1 (no) 2007-05-14
EP0943178A1 (de) 1999-09-22
EP0943178B1 (de) 2002-09-18
WO1998059421A1 (en) 1998-12-30
NO990598L (no) 1999-02-09
FI102993B (fi) 1999-03-31
DK0943178T3 (da) 2003-01-27
JP2000517148A (ja) 2000-12-19
ES2184273T3 (es) 2003-04-01

Similar Documents

Publication Publication Date Title
DK0552273T3 (da) Kredsløbsbeskyttelsesarrangement
ATE160063T1 (de) Schaltungsanordnung zur ansteuerung eines mos- leistungstransistors
WO1996012347A3 (en) A protected switch
DE69808044D1 (de) Schutz gegen kurzschluss für einen halbleiterschalter
WO1996012346A3 (en) A protected switch
MX9200033A (es) Dispositivo de proteccion contra sobrecorrientes.
WO2002029949A3 (en) Semiconductor device with protective functions
TW359050B (en) Analog switch
ATE185452T1 (de) Steckdose
WO2006031709A3 (en) Mirror element drive circuit with fault protection
ES2068327T3 (es) Circuito para alimentar una carga.
DE59303598D1 (de) Automatische laststromrückregelung
KR910008925A (ko) 승압 전환 구조를 갖는 정전압 조절기용 전력 공급 회로
ES2185536T3 (es) Conmutador electronico.
DE69706490T2 (de) Stromversorgungsschaltung
KR910002082A (ko) 스위칭 모드 전원장치의 능동 더미(Dummy)부하회로
JPS5775330A (en) Overload protecting device
JPS6436061A (en) Cmos semiconductor integrated circuit device
ATE376279T1 (de) Schaltungsanordnung
KR930015244A (ko) 배터리 과충전 보호회로
JPS6412821A (en) Rush current preventive circuit
JPS5851664A (ja) インターホンの呼出回路
JPS57188134A (en) Ac two-wire type contactless switch
ATE481773T1 (de) Schutzverfahren für leistungshalbleiter eines leistungswandlers und dieses verwendender wandler
JPS6439223A (en) Excess current protecting power switch

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee