NO873761L - Lager for digitale elektroniske signaler. - Google Patents

Lager for digitale elektroniske signaler.

Info

Publication number
NO873761L
NO873761L NO873761A NO873761A NO873761L NO 873761 L NO873761 L NO 873761L NO 873761 A NO873761 A NO 873761A NO 873761 A NO873761 A NO 873761A NO 873761 L NO873761 L NO 873761L
Authority
NO
Norway
Prior art keywords
membrane
storage
digital electronic
electronic signals
positional
Prior art date
Application number
NO873761A
Other languages
English (en)
Norwegian (no)
Other versions
NO873761D0 (no
Inventor
Radivoje Popovic
Katalin Solt
Heinz Lienhard
Original Assignee
Landis & Gyr Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Landis & Gyr Ag filed Critical Landis & Gyr Ag
Publication of NO873761D0 publication Critical patent/NO873761D0/no
Publication of NO873761L publication Critical patent/NO873761L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/04—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using capacitive elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Credit Cards Or The Like (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measuring Fluid Pressure (AREA)
NO873761A 1986-09-10 1987-09-09 Lager for digitale elektroniske signaler. NO873761L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH3647/86A CH670914A5 (fr) 1986-09-10 1986-09-10

Publications (2)

Publication Number Publication Date
NO873761D0 NO873761D0 (no) 1987-09-09
NO873761L true NO873761L (no) 1988-03-11

Family

ID=4260485

Family Applications (1)

Application Number Title Priority Date Filing Date
NO873761A NO873761L (no) 1986-09-10 1987-09-09 Lager for digitale elektroniske signaler.

Country Status (8)

Country Link
US (1) US4979149A (fr)
EP (1) EP0259614B1 (fr)
JP (1) JPS6373554A (fr)
AT (1) ATE72075T1 (fr)
CH (1) CH670914A5 (fr)
DE (1) DE3776237D1 (fr)
GR (1) GR3004073T3 (fr)
NO (1) NO873761L (fr)

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE131115T1 (de) * 1991-10-14 1995-12-15 Landis & Gyr Tech Innovat Sicherheitselement.
US5538753A (en) * 1991-10-14 1996-07-23 Landis & Gyr Betriebs Ag Security element
GB9309327D0 (en) * 1993-05-06 1993-06-23 Smith Charles G Bi-stable memory element
US6100109A (en) * 1994-11-02 2000-08-08 Siemens Aktiengesellschaft Method for producing a memory device
DE59509883D1 (de) * 1995-08-09 2002-01-10 Infineon Technologies Ag Speichervorrichtung und Herstellungsverfahren
US5638946A (en) * 1996-01-11 1997-06-17 Northeastern University Micromechanical switch with insulated switch contact
WO1997029538A1 (fr) * 1996-02-10 1997-08-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Microactionneur bistable a membranes couplees
US6237590B1 (en) * 1997-09-18 2001-05-29 Delsys Pharmaceutical Corporation Dry powder delivery system apparatus
US6188301B1 (en) * 1998-11-13 2001-02-13 General Electric Company Switching structure and method of fabrication
JP4650854B2 (ja) * 1998-12-22 2011-03-16 ランバス・インコーポレーテッド 事前に印加された電極電圧に依存する電極電圧を備える光ガイドを有する表示装置
US6211580B1 (en) * 1998-12-29 2001-04-03 Honeywell International Inc. Twin configuration for increased life time in touch mode electrostatic actuators
US6054745A (en) * 1999-01-04 2000-04-25 International Business Machines Corporation Nonvolatile memory cell using microelectromechanical device
AU2565800A (en) * 1999-03-18 2000-10-04 Cavendish Kinetics Limited Flash memory cell having a flexible element
CA2372707C (fr) * 1999-07-02 2014-12-09 President And Fellows Of Harvard College Dispositifs nanoscopiques a base de fils, ensembles ainsi formes et procedes de fabrication y relatifs
JP2001102597A (ja) 1999-09-30 2001-04-13 Fuji Electric Co Ltd 半導体構造およびその製造方法
US6716657B1 (en) * 2000-05-26 2004-04-06 Agere Systems Inc Method for interconnecting arrays of micromechanical devices
US6473361B1 (en) 2000-11-10 2002-10-29 Xerox Corporation Electromechanical memory cell
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US7566478B2 (en) 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US7259410B2 (en) * 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US7563711B1 (en) * 2001-07-25 2009-07-21 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6911682B2 (en) * 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7176505B2 (en) 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
DE60302053T2 (de) * 2002-03-26 2006-07-20 Koninklijke Philips Electronics N.V. Anzeigevorrichtung mit einer lichtdurchlässigen platte und einem lichtabsorbierenden mittel
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
JP4186727B2 (ja) * 2002-07-26 2008-11-26 松下電器産業株式会社 スイッチ
CN1929067B (zh) * 2002-07-26 2010-05-26 松下电器产业株式会社 开关
US6972881B1 (en) 2002-11-21 2005-12-06 Nuelight Corp. Micro-electro-mechanical switch (MEMS) display panel with on-glass column multiplexers using MEMS as mux elements
US7560136B2 (en) 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
FR2852441A1 (fr) * 2003-03-14 2004-09-17 St Microelectronics Sa Dispositif de memoire
EP1631812A4 (fr) 2003-05-14 2010-12-01 Nantero Inc Plateforme de detection faisant appel a un element a nanotubes a orientation horizontale
US7199498B2 (en) 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
EP1634296A4 (fr) * 2003-06-09 2007-02-14 Nantero Inc Dispositifs electromecaniques non volatils a effet de champ, circuits mettant en oeuvre ces dispositifs et procedes de fabrication correspondant
US7274064B2 (en) 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
FR2858459B1 (fr) * 2003-08-01 2006-03-10 Commissariat Energie Atomique Commutateur micro-mecanique bistable, methode d'actionnement et procede de realisation correspondant
WO2005017967A2 (fr) * 2003-08-13 2005-02-24 Nantero, Inc. Structure dispositif a nanotube et son procede de production
US7115960B2 (en) * 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
WO2005084164A2 (fr) * 2003-08-13 2005-09-15 Nantero, Inc. Circuits logiques et element de commutation fondes sur des nanotubes
US7289357B2 (en) * 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
CA2535634A1 (fr) * 2003-08-13 2005-05-26 Nantero, Inc Elements de commutation a base de nanotubes comprenant des commandes multiples et circuits produits a partir de ces elements
US7416993B2 (en) * 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US7215229B2 (en) * 2003-09-17 2007-05-08 Schneider Electric Industries Sas Laminated relays with multiple flexible contacts
JP4626142B2 (ja) * 2003-11-18 2011-02-02 株式会社日立製作所 装置およびそれを用いたデータ処理方法
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
CA2568140A1 (fr) * 2004-05-24 2006-07-20 Trustees Of Boston University Element memoire nanochimique commandable
US7709880B2 (en) * 2004-06-09 2010-05-04 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US7329931B2 (en) 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and transistors
US7161403B2 (en) 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US7164744B2 (en) * 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7330709B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and logic
US7288970B2 (en) 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
US7167026B2 (en) * 2004-06-18 2007-01-23 Nantero, Inc. Tri-state circuit using nanotube switching elements
US7518283B2 (en) * 2004-07-19 2009-04-14 Cjp Ip Holdings Ltd. Nanometer-scale electrostatic and electromagnetic motors and generators
US8471238B2 (en) 2004-09-16 2013-06-25 Nantero Inc. Light emitters using nanotubes and methods of making same
DE602005020318D1 (de) 2004-09-22 2010-05-12 Nantero Inc Direktzugriffsspeicher mit nanoröhrenschaltelementen
JP5244392B2 (ja) * 2004-10-15 2013-07-24 エヌエックスピー ビー ヴィ Ｒｆｉｄシステムを動作させる方法
US7046539B1 (en) 2004-11-02 2006-05-16 Sandia Corporation Mechanical memory
US8362525B2 (en) 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US7598544B2 (en) * 2005-01-14 2009-10-06 Nanotero, Inc. Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
US7579618B2 (en) 2005-03-02 2009-08-25 Northrop Grumman Corporation Carbon nanotube resonator transistor and method of making same
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8217490B2 (en) 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
TWI324773B (en) 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US8013363B2 (en) * 2005-05-09 2011-09-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US8513768B2 (en) 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7782650B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7781862B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US9196615B2 (en) 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7928521B1 (en) 2005-05-31 2011-04-19 Nantero, Inc. Non-tensioned carbon nanotube switch design and process for making same
US7915122B2 (en) * 2005-06-08 2011-03-29 Nantero, Inc. Self-aligned cell integration scheme
JP5054936B2 (ja) * 2005-06-22 2012-10-24 パナソニック株式会社 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法
US7349236B2 (en) * 2005-06-24 2008-03-25 Xerox Corporation Electromechanical memory cell with torsional movement
US7538040B2 (en) * 2005-06-30 2009-05-26 Nantero, Inc. Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
GB0515980D0 (en) * 2005-08-03 2005-09-07 Cavendish Kinetics Ltd Memory cell for a circuit and method of operation therefor
CN101287698A (zh) 2005-09-06 2008-10-15 诺华丝国际股份有限公司 含有甲硫氨酸的羟基类似物以及衍生物的罐装和干法涂布的抗微生物组合物
CN101273456B (zh) * 2005-09-27 2012-04-18 康奈尔研究基金公司 形状记忆装置
GB0525025D0 (en) * 2005-12-08 2006-01-18 Cavendish Kinetics Ltd memory Cell and Array
US7336527B1 (en) 2005-12-14 2008-02-26 International Business Machines Corporation Electromechanical storage device
KR100827705B1 (ko) * 2006-10-23 2008-05-07 삼성전자주식회사 비 휘발성 메모리 소자 및 그의 제조방법
KR100834829B1 (ko) * 2006-12-19 2008-06-03 삼성전자주식회사 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법
FR2910706B1 (fr) * 2006-12-21 2009-03-20 Commissariat Energie Atomique Element d'interconnexion a base de nanotubes de carbone
WO2008124084A2 (fr) 2007-04-03 2008-10-16 Pinkerton Joseph F Systèmes nano-électromécaniques et procédés de fabrication de ceux-ci
WO2009008929A2 (fr) * 2007-04-09 2009-01-15 Northeastern University Commutateur bistable à l'échelle nanométrique
JP5026144B2 (ja) * 2007-05-18 2012-09-12 日本電信電話株式会社 記憶素子
WO2009005908A2 (fr) * 2007-05-22 2009-01-08 Nantero, Inc. Triodes utilisant des articles en nanotissu et procédé de réalisation associé
WO2009002748A1 (fr) * 2007-06-22 2008-12-31 Nantero, Inc. Dispositifs à nanotubes à deux bornes comprenant un pont de nanotubes et procédés de fabrication de ces dispositifs
US8704314B2 (en) 2007-12-06 2014-04-22 Massachusetts Institute Of Technology Mechanical memory transistor
US9263126B1 (en) 2010-09-01 2016-02-16 Nantero Inc. Method for dynamically accessing and programming resistive change element arrays
US8253171B1 (en) 2009-08-27 2012-08-28 Lockheed Martin Corporation Two terminal nanotube switch, memory array incorporating the same and method of making
US20130113810A1 (en) * 2011-11-04 2013-05-09 Qualcomm Mems Technologies, Inc. Sidewall spacers along conductive lines
ITTO20120224A1 (it) 2012-03-15 2013-09-16 St Microelectronics Srl Elemento di memoria elettromeccanico integrato e memoria elettronica comprendente il medesimo
KR101928344B1 (ko) * 2012-10-24 2018-12-13 삼성전자주식회사 나노 공진 장치 및 방법
FR3085786B1 (fr) * 2018-09-11 2021-02-19 Commissariat Energie Atomique Cellule de memorisation en logique capacitive

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087810A (en) * 1976-06-30 1978-05-02 International Business Machines Corporation Membrane deformographic display, and method of making
FR2376549A1 (fr) * 1977-01-04 1978-07-28 Thomson Csf Systeme bistable a electrets
US4113360A (en) * 1977-03-28 1978-09-12 Siemens Aktiengesellschaft Indicating device for illustrating symbols of all kinds
US4229732A (en) * 1978-12-11 1980-10-21 International Business Machines Corporation Micromechanical display logic and array
EP0046873A1 (fr) * 1980-09-02 1982-03-10 Texas Instruments Incorporated Modulateur de lumière à miroir déformable
US4441791A (en) * 1980-09-02 1984-04-10 Texas Instruments Incorporated Deformable mirror light modulator
US4356730A (en) * 1981-01-08 1982-11-02 International Business Machines Corporation Electrostatically deformographic switches
US4543457A (en) * 1984-01-25 1985-09-24 Transensory Devices, Inc. Microminiature force-sensitive switch
US4704707A (en) * 1984-08-21 1987-11-03 Bos-Knox, Ltd. Electrostatic random access memory
US4736202A (en) * 1984-08-21 1988-04-05 Bos-Knox, Ltd. Electrostatic binary switching and memory devices
US4570139A (en) * 1984-12-14 1986-02-11 Eaton Corporation Thin-film magnetically operated micromechanical electric switching device
JPS62501172A (ja) * 1984-12-19 1987-05-07 シンプソン，ジヨ−ジ　ア−ル 静電２進切り替え装置及びメモリ装置

Also Published As

Publication number Publication date
DE3776237D1 (de) 1992-03-05
GR3004073T3 (fr) 1993-03-31
EP0259614A1 (fr) 1988-03-16
CH670914A5 (fr) 1989-07-14
JPS6373554A (ja) 1988-04-04
EP0259614B1 (fr) 1992-01-22
ATE72075T1 (de) 1992-02-15
US4979149A (en) 1990-12-18
NO873761D0 (no) 1987-09-09

Similar Documents

Publication Publication Date Title
NO873761D0 (no) Lager for digitale elektroniske signaler.
DE3852960D1 (de) Monokristallines Dünnschichtsubstrat.
EP0649008A3 (fr) Structure à membrane de zircone, méthode de sa fabrication, et couche mince piézo-électrique/électrostrictive comportant cette structure.
WO1987007736A1 (fr) Materiau photosensible pour l'electrophotographie
IT1200731B (it) Attuatore ad elemento piezoelettrico con escursione amplificata mediante leve
DK371489D0 (da) Enzymelektroder og fremgangsmaade til fremstilling af saadanne elektroder
DE69011532D1 (de) Nervenelektrode aus biologischem substrat.
GB9719673D0 (en) Novel apparatus
KR890010740A (ko) 메모리 카드용 전자 부품 지지부 및 그것을 이용한 메모리 카드
IT8722411A0 (it) Elettro magnete polarizzato bistabile.
MY118378A (en) Information recording substrate and information recording medium prepared from the substrate.
NO882222D0 (no) Fremgangsmaate for fremstilling av tynn film av supraledende oksyd.
DE3888689D1 (de) Substrate für enzymtests.
EP0388175A3 (fr) Dispositif de mémoire à semi-conducteur
DE3881574D1 (de) Vermittlungsverfahren fuer integrierte sprach/daten-uebertragung.
DE3850641D1 (de) Struktur zur Versiegelung eines elektrostriktiven Elements.
FR2709330B1 (fr) Carburateur à membrane.
FR2706403B1 (fr) Servomoteur à soufflet poreux formant filtre.
ATE205615T1 (de) Aufdatverfahren
IT8820586A0 (it) Custodia per supporti di informazioni.
FR2593077B1 (fr) Filtre en matiere refractaire.
DE3575233D1 (de) Amorpher weichmagnetischer duenner film.
EP1113323A3 (fr) Elément d'imagerie contenant un composé photographiquement utile bloqué
NO984416L (no) Blandinger innbefattende krystall-lignende materiale av overgangsmetall, samt fremgangsmÕter for anvendelse derav
IT1261937B (it) Designatore grafico e procedimento per la sua produzione.