NO751762L - - Google Patents
Info
- Publication number
- NO751762L NO751762L NO751762A NO751762A NO751762L NO 751762 L NO751762 L NO 751762L NO 751762 A NO751762 A NO 751762A NO 751762 A NO751762 A NO 751762A NO 751762 L NO751762 L NO 751762L
- Authority
- NO
- Norway
- Prior art keywords
- silicon carbide
- boron
- dispersion
- weight
- powder
- Prior art date
Links
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 15
- 239000000843 powder Substances 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 230000005484 gravity Effects 0.000 claims description 9
- 239000006185 dispersion Substances 0.000 claims description 7
- -1 silicon halide Chemical class 0.000 claims description 7
- 239000007970 homogeneous dispersion Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000011144 upstream manufacturing Methods 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 2
- 239000007789 gas Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
- B01J12/002—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out in the plasma state
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0894—Processes carried out in the presence of a plasma
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Carbon And Carbon Compounds (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US47130374A | 1974-05-20 | 1974-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO751762L true NO751762L (ru) | 1975-11-21 |
Family
ID=23871083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO751762A NO751762L (ru) | 1974-05-20 | 1975-05-16 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS50160200A (ru) |
| DE (1) | DE2518950A1 (ru) |
| FR (1) | FR2272032A1 (ru) |
| NL (1) | NL7505601A (ru) |
| NO (1) | NO751762L (ru) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4860015A (en) * | 1972-08-29 | 1989-08-22 | The United States Of America As Represented By The Secretary Of The Air Force | Delay line null command generator test set for sarcalm |
| US4295890A (en) * | 1975-12-03 | 1981-10-20 | Ppg Industries, Inc. | Submicron beta silicon carbide powder and sintered articles of high density prepared therefrom |
| JPS606908B2 (ja) * | 1977-08-04 | 1985-02-21 | 日本坩堝株式会社 | 硼素成分を含有する活性な炭化珪素質粉末の製造方法 |
| DE2744636A1 (de) * | 1977-10-04 | 1979-05-17 | Wolfgang Dipl Ing Boecker | Verfahren und vorrichtung zur herstellung von hochreinem siliciumcarbidpulver und seine verwendung |
| DE2953430C2 (de) * | 1978-12-21 | 1985-07-04 | Evgenij Aleksandrovič Antonov | Verfahren zur Herstellung von hohlen Erzeugnissen durch Tiefziehen und Presse zur Durchführung dieses Verfahrens |
| US4423303A (en) * | 1980-05-06 | 1983-12-27 | Tokyo Shibaura Denki Kabushiki Kaisha | Apparatus for treating powdery materials utilizing microwave plasma |
| US4529575A (en) * | 1982-08-27 | 1985-07-16 | Ibiden Kabushiki Kaisha | Process for producing ultrafine silicon carbide powder |
| EP0434667B1 (en) * | 1985-04-04 | 1996-07-03 | Nippon Steel Corporation | Processes for producing silicon carbide particles and sinter |
| US5080879A (en) * | 1988-12-01 | 1992-01-14 | Alcan International Limited | Process for producing silicon carbide platelets and the platelets so produced |
| US5087592A (en) * | 1990-05-25 | 1992-02-11 | Alcan International Limited | Method of producing platelets of borides of refractory metals |
| US5173283A (en) * | 1990-10-01 | 1992-12-22 | Alcan International Limited | Platelets for producing silicon carbide platelets and the platelets so-produced |
| DE102008064642A1 (de) | 2008-09-30 | 2010-04-01 | Evonik Degussa Gmbh | Zusammensetzung oder Kit für ein Verfahren zur Herstellung von hochreinem Siliciumcarbid aus Kohlenhydraten und Siliciumoxid sowie darauf basierende Artikel |
-
1975
- 1975-04-29 DE DE19752518950 patent/DE2518950A1/de active Pending
- 1975-05-13 NL NL7505601A patent/NL7505601A/xx unknown
- 1975-05-16 NO NO751762A patent/NO751762L/no unknown
- 1975-05-20 FR FR7515692A patent/FR2272032A1/fr active Granted
- 1975-05-20 JP JP50059325A patent/JPS50160200A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2272032B1 (ru) | 1977-04-15 |
| NL7505601A (nl) | 1975-11-24 |
| JPS50160200A (ru) | 1975-12-25 |
| DE2518950A1 (de) | 1975-12-04 |
| FR2272032A1 (en) | 1975-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Yoshida et al. | The synthesis of ultrafine titanium nitride in an rf plasma | |
| Merzhanov et al. | Historical retrospective of SHS: An autoreview | |
| US5486675A (en) | Plasma production of ultra-fine ceramic carbides | |
| Taylor et al. | Thermal plasma processing of materials: A review | |
| NO751762L (ru) | ||
| Elagin et al. | Aluminum nitride. Preparation methods | |
| Zhou et al. | A review on the methods of preparation of elemental boron | |
| Trent et al. | Vapor deposition of pure ruthenium metal from ruthenocene | |
| Jin et al. | Effect of Si3N4 diluent on direct nitridation of silicon powder | |
| CN102060538B (zh) | 利用高温旋转炉合成氮化硅粉末的方法 | |
| Wang et al. | A facile pathway to prepare molybdenum boride powder from molybdenum and boron carbide | |
| Zhang et al. | The effect of carbon sources and activative additive on the formation of SiC powder in combustion reaction | |
| Akashi | Progress in thermal plasma deposition of alloys and ceramic fine particles | |
| Li et al. | A facile route for the synthesis of high‐entropy transition carbides/borides at low temperatures | |
| Guo et al. | Effects of process parameters on ultrafine SiC synthesis using induction plasmas | |
| US2832672A (en) | Process for the manufactur of boron nitride | |
| Wang et al. | Formation of MgO‐B4C Composite via aThermite‐Based Combustion Reaction | |
| Hutchison et al. | Carbothermic reduction of silicon dioxide—A thermodynamic investigation | |
| WO2015022947A1 (ja) | 燃焼合成システム、反応生成物、物品、燃焼合成方法、発電システム、プラズマ発生装置および発電装置 | |
| US3432330A (en) | Pyrolytic vacuum deposition from gases | |
| Sohn et al. | The chemical vapor synthesis of inorganic nanopowders | |
| Kana'an et al. | Chemical Reactions in Electric Discharges | |
| US3260571A (en) | Boron phosphides | |
| JPS58181707A (ja) | 窒化ほう素の製造法 | |
| RU2648421C2 (ru) | Способ получения карбида бора плазмохимическим методом |