NO20045674D0 - Thin films prepared with gas phase deposition technique - Google Patents
Thin films prepared with gas phase deposition techniqueInfo
- Publication number
- NO20045674D0 NO20045674D0 NO20045674A NO20045674A NO20045674D0 NO 20045674 D0 NO20045674 D0 NO 20045674D0 NO 20045674 A NO20045674 A NO 20045674A NO 20045674 A NO20045674 A NO 20045674A NO 20045674 D0 NO20045674 D0 NO 20045674D0
- Authority
- NO
- Norway
- Prior art keywords
- gas phase
- thin films
- deposition technique
- phase deposition
- films prepared
- Prior art date
Links
- 238000000151 deposition Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
- B05D1/185—Processes for applying liquids or other fluent materials performed by dipping applying monomolecular layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/50—Multilayers
- B05D7/52—Two layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/50—Multilayers
- B05D7/56—Three layers or more
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20045674A NO20045674D0 (no) | 2004-12-28 | 2004-12-28 | Thin films prepared with gas phase deposition technique |
EP05822680.4A EP1838893B1 (en) | 2004-12-28 | 2005-12-28 | Thin films prepared with gas phase deposition technique |
DK05822680.4T DK1838893T3 (en) | 2004-12-28 | 2005-12-28 | Thin films made with gas phase deposition technique |
US11/722,937 US8124179B2 (en) | 2004-12-28 | 2005-12-28 | Thin films prepared with gas phase deposition technique |
ES05822680T ES2730832T3 (es) | 2004-12-28 | 2005-12-28 | Películas finas preparadas con una técnica de deposición en fase gaseosa |
KR1020077014802A KR101322095B1 (ko) | 2004-12-28 | 2005-12-28 | 기체상 증착 기술에 의한 박막 |
PL05822680T PL1838893T3 (pl) | 2004-12-28 | 2005-12-28 | Cienkie warstwy wytwarzane techniką osadzania z fazy gazowej |
PCT/NO2005/000488 WO2006071126A1 (en) | 2004-12-28 | 2005-12-28 | Thin films prepared with gas phase deposition technique |
NO20073885A NO343742B1 (no) | 2004-12-28 | 2007-07-24 | Fremgangsmåte for fremstilling av tynnfilm ved gassfasedeponeringsteknikk |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20045674A NO20045674D0 (no) | 2004-12-28 | 2004-12-28 | Thin films prepared with gas phase deposition technique |
Publications (1)
Publication Number | Publication Date |
---|---|
NO20045674D0 true NO20045674D0 (no) | 2004-12-28 |
Family
ID=35209724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20045674A NO20045674D0 (no) | 2004-12-28 | 2004-12-28 | Thin films prepared with gas phase deposition technique |
Country Status (8)
Country | Link |
---|---|
US (1) | US8124179B2 (ko) |
EP (1) | EP1838893B1 (ko) |
KR (1) | KR101322095B1 (ko) |
DK (1) | DK1838893T3 (ko) |
ES (1) | ES2730832T3 (ko) |
NO (1) | NO20045674D0 (ko) |
PL (1) | PL1838893T3 (ko) |
WO (1) | WO2006071126A1 (ko) |
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MXPA06008293A (es) | 2004-01-22 | 2007-06-11 | Univ Miami | Formulaciones topicas de coenzima q10 y metodos de uso. |
KR20090032089A (ko) * | 2006-06-19 | 2009-03-31 | 유니버시테테트 아이 오슬로 | 기상 반응을 통한 표면의 활성화 |
JP5717967B2 (ja) | 2006-11-13 | 2015-05-13 | ザ・リージエンツ・オブ・ザ・ユニバーシティ・オブ・コロラド | 有機又は有機−無機ポリマーを製造するための分子層堆積法 |
WO2008111850A2 (en) * | 2007-03-15 | 2008-09-18 | Universitetet I Oslo | Synthesis of molecular metalorganic compounds |
CA2823407C (en) | 2007-03-22 | 2016-10-18 | Berg Pharma Llc | Topical formulations having enhanced bioavailability |
EP2171534B1 (en) | 2007-06-22 | 2015-12-02 | The Regents of the University of Colorado | Protective coatings for organic electronic devices made using atomic layer deposition and molecular layer deposition techniques |
WO2009001220A2 (en) * | 2007-06-26 | 2008-12-31 | Universitetet I Oslo | Functionalization of microscopy probe tips |
US7858144B2 (en) * | 2007-09-26 | 2010-12-28 | Eastman Kodak Company | Process for depositing organic materials |
USRE48853E1 (en) | 2007-12-28 | 2021-12-14 | Universitetet I Oslo | Formation of a lithium comprising structure on a substrate by ALD |
CA2721071C (en) | 2008-04-11 | 2017-10-17 | Cytotech Labs, Llc | Methods and use of inducing apoptosis in cancer cells |
DE102008054052A1 (de) * | 2008-10-30 | 2010-05-06 | Osram Opto Semiconductors Gmbh | Organisches, strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines solchen |
JP6081195B2 (ja) | 2009-05-11 | 2017-02-15 | バーグ エルエルシー | エピメタボリックシフター、多次元細胞内分子、または環境影響因子を使用する腫瘍性障害の診断のための方法 |
EP2544663B1 (en) | 2010-03-12 | 2018-01-03 | Berg LLC | Intravenous formulations of coenzyme q10 (coq10) and methods of use thereof |
KR101489161B1 (ko) | 2010-07-30 | 2015-02-06 | 주식회사 잉크테크 | 투명 도전막의 제조방법 및 이에 의해 제조된 투명 도전막 |
KR101883360B1 (ko) * | 2011-03-28 | 2018-07-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 에피택셜 게르마늄 스트레서 합금들의 선택적 증착을 위한 방법 및 장치 |
CN103608323B (zh) | 2011-04-04 | 2016-08-17 | 博格有限责任公司 | 治疗中枢神经系统肿瘤的方法 |
PE20180414A1 (es) | 2011-06-17 | 2018-03-01 | Berg Llc | Composiciones farmaceuticas inhalables |
WO2013148211A1 (en) | 2012-03-30 | 2013-10-03 | The Trustees Of Columbia University In The City Of New York | Solid-state materials formed of molecular clusters and method of forming same |
EP2770373A1 (en) * | 2013-02-20 | 2014-08-27 | Imec | Conformal anti-reflective coating |
KR102123996B1 (ko) | 2013-02-25 | 2020-06-17 | 삼성전자주식회사 | 알루미늄 전구체, 이를 이용한 박막 형성 방법 및 커패시터 형성 방법 |
US10933032B2 (en) | 2013-04-08 | 2021-03-02 | Berg Llc | Methods for the treatment of cancer using coenzyme Q10 combination therapies |
SG11201600921XA (en) * | 2013-08-30 | 2016-03-30 | Iucf Hyu | Hybrid organic/inorganic thin films and method of manufacturing same |
IL276423B2 (en) | 2013-09-04 | 2024-05-01 | Berg Llc | Pharmaceutical preparations containing coenzyme Q10 for use in cancer treatment |
US9755235B2 (en) | 2014-07-17 | 2017-09-05 | Ada Technologies, Inc. | Extreme long life, high energy density batteries and method of making and using the same |
JP6657588B2 (ja) * | 2015-04-17 | 2020-03-04 | 凸版印刷株式会社 | 積層体及びその製造方法 |
US10217571B2 (en) | 2015-05-21 | 2019-02-26 | Ada Technologies, Inc. | High energy density hybrid pseudocapacitors and method of making and using the same |
US11996564B2 (en) | 2015-06-01 | 2024-05-28 | Forge Nano Inc. | Nano-engineered coatings for anode active materials, cathode active materials, and solid-state electrolytes and methods of making batteries containing nano-engineered coatings |
WO2017023797A1 (en) | 2015-07-31 | 2017-02-09 | Ada Technologies, Inc. | High energy and power electrochemical device and method of making and using same |
US11024846B2 (en) | 2017-03-23 | 2021-06-01 | Ada Technologies, Inc. | High energy/power density, long cycle life, safe lithium-ion battery capable of long-term deep discharge/storage near zero volt and method of making and using the same |
TWI722301B (zh) | 2017-07-18 | 2021-03-21 | 美商應用材料股份有限公司 | 在金屬材料表面上沉積阻擋層的方法 |
KR102534238B1 (ko) | 2017-08-24 | 2023-05-19 | 포지 나노, 인크. | 분말의 합성, 기능화, 표면 처리 및/또는 캡슐화를 위한 제조 공정, 및 그의 응용 |
WO2019120650A1 (en) * | 2017-12-20 | 2019-06-27 | Basf Se | Process for the generation of metal-containing films |
KR102649437B1 (ko) * | 2018-05-30 | 2024-03-19 | 한양대학교 산학협력단 | 안티-그로스 박막 및 그 제조 방법 |
WO2020141731A1 (ko) * | 2018-12-31 | 2020-07-09 | 한양대학교 산학협력단 | 메탈리스 박막의 제조 방법, 그리고 미세패턴 제조 방법, 그리고 전자 소자의 제조 방법 |
KR102265169B1 (ko) * | 2019-07-11 | 2021-06-15 | 한양대학교 산학협력단 | 하이브리드 박막 및 그 제조 방법 |
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KR100297719B1 (ko) * | 1998-10-16 | 2001-08-07 | 윤종용 | 박막제조방법 |
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KR100421219B1 (ko) | 2001-06-14 | 2004-03-02 | 삼성전자주식회사 | β-디케톤 리간드를 갖는 유기 금속 착물을 이용한 원자층증착방법 |
US6645882B1 (en) | 2002-01-17 | 2003-11-11 | Advanced Micro Devices, Inc. | Preparation of composite high-K/standard-K dielectrics for semiconductor devices |
US6830971B2 (en) | 2002-11-02 | 2004-12-14 | Chartered Semiconductor Manufacturing Ltd | High K artificial lattices for capacitor applications to use in CU or AL BEOL |
US7045073B2 (en) | 2002-12-18 | 2006-05-16 | Intel Corporation | Pre-etch implantation damage for the removal of thin film layers |
WO2004086486A1 (ja) * | 2003-03-26 | 2004-10-07 | Riken | 誘電体絶縁薄膜の製造方法及び誘電体絶縁材料 |
-
2004
- 2004-12-28 NO NO20045674A patent/NO20045674D0/no unknown
-
2005
- 2005-12-28 WO PCT/NO2005/000488 patent/WO2006071126A1/en active Application Filing
- 2005-12-28 ES ES05822680T patent/ES2730832T3/es active Active
- 2005-12-28 US US11/722,937 patent/US8124179B2/en active Active
- 2005-12-28 PL PL05822680T patent/PL1838893T3/pl unknown
- 2005-12-28 KR KR1020077014802A patent/KR101322095B1/ko active IP Right Grant
- 2005-12-28 EP EP05822680.4A patent/EP1838893B1/en active Active
- 2005-12-28 DK DK05822680.4T patent/DK1838893T3/en active
Also Published As
Publication number | Publication date |
---|---|
EP1838893B1 (en) | 2019-01-23 |
US8124179B2 (en) | 2012-02-28 |
ES2730832T3 (es) | 2019-11-12 |
DK1838893T3 (en) | 2019-04-29 |
KR20070095919A (ko) | 2007-10-01 |
WO2006071126A1 (en) | 2006-07-06 |
US20080102313A1 (en) | 2008-05-01 |
KR101322095B1 (ko) | 2013-10-25 |
EP1838893A1 (en) | 2007-10-03 |
PL1838893T3 (pl) | 2019-07-31 |
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