NO20043163L - Organisk, elektronisk krets og fremgangsmate til dens fremstilling - Google Patents

Organisk, elektronisk krets og fremgangsmate til dens fremstilling

Info

Publication number
NO20043163L
NO20043163L NO20043163A NO20043163A NO20043163L NO 20043163 L NO20043163 L NO 20043163L NO 20043163 A NO20043163 A NO 20043163A NO 20043163 A NO20043163 A NO 20043163A NO 20043163 L NO20043163 L NO 20043163L
Authority
NO
Norway
Prior art keywords
layer
electrode
active material
organic
ferroelectric
Prior art date
Application number
NO20043163A
Other languages
English (en)
Other versions
NO321280B1 (no
NO20043163D0 (no
Inventor
Goran Gustafsson
Hans Gude Gudesen
Rickard Liljedahl
Mats Sandberg
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20043163A priority Critical patent/NO321280B1/no
Publication of NO20043163D0 publication Critical patent/NO20043163D0/no
Priority to EP05761995A priority patent/EP1782428B1/en
Priority to PCT/NO2005/000268 priority patent/WO2006009462A1/en
Priority to AT05761995T priority patent/ATE479189T1/de
Priority to PCT/NO2005/000267 priority patent/WO2006009461A1/en
Priority to CN2005800313202A priority patent/CN101023493B/zh
Priority to EP05761750A priority patent/EP1774591A4/en
Priority to DE602005023177T priority patent/DE602005023177D1/de
Priority to CNA2005800313274A priority patent/CN101023527A/zh
Priority to US11/185,861 priority patent/US7482624B2/en
Priority to US11/185,860 priority patent/US7291859B2/en
Publication of NO20043163L publication Critical patent/NO20043163L/no
Publication of NO321280B1 publication Critical patent/NO321280B1/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Polysaccharides And Polysaccharide Derivatives (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Inorganic Insulating Materials (AREA)
NO20043163A 2004-07-22 2004-07-22 Organisk, elektronisk krets og fremgangsmate til dens fremstilling NO321280B1 (no)

Priority Applications (11)

Application Number Priority Date Filing Date Title
NO20043163A NO321280B1 (no) 2004-07-22 2004-07-22 Organisk, elektronisk krets og fremgangsmate til dens fremstilling
CNA2005800313274A CN101023527A (zh) 2004-07-22 2005-07-18 具有通路连接的有机铁电体或永电体器件及其制造方法
PCT/NO2005/000267 WO2006009461A1 (en) 2004-07-22 2005-07-18 An organic ferroelectric or electret memory circuit and a method for making same
PCT/NO2005/000268 WO2006009462A1 (en) 2004-07-22 2005-07-18 An organic ferroelectric or electret device with via connections and a method for its manufacture
AT05761995T ATE479189T1 (de) 2004-07-22 2005-07-18 Organische ferroelektrische oder elektret- speicherschaltung und herstellungsverfahren dafür
EP05761995A EP1782428B1 (en) 2004-07-22 2005-07-18 An organic ferroelectric or electret memory circuit and a method for making same
CN2005800313202A CN101023493B (zh) 2004-07-22 2005-07-18 有机铁电体或永电体存储电路及其制造方法
EP05761750A EP1774591A4 (en) 2004-07-22 2005-07-18 ORGANIC FERROELECTRIC OR ELECTRONIC ELEMENT WITH CONTACTING AND MANUFACTURING METHOD THEREFOR
DE602005023177T DE602005023177D1 (de) 2004-07-22 2005-07-18 Organische ferroelektrische oder elektret-speicherschaltung und herstellungsverfahren dafür
US11/185,861 US7482624B2 (en) 2004-07-22 2005-07-21 Organic electronic circuit and method for making the same
US11/185,860 US7291859B2 (en) 2004-07-22 2005-07-21 Organic electronic circuit and method for making the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20043163A NO321280B1 (no) 2004-07-22 2004-07-22 Organisk, elektronisk krets og fremgangsmate til dens fremstilling

Publications (3)

Publication Number Publication Date
NO20043163D0 NO20043163D0 (no) 2004-07-22
NO20043163L true NO20043163L (no) 2006-01-23
NO321280B1 NO321280B1 (no) 2006-04-18

Family

ID=35013324

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20043163A NO321280B1 (no) 2004-07-22 2004-07-22 Organisk, elektronisk krets og fremgangsmate til dens fremstilling

Country Status (7)

Country Link
US (2) US7291859B2 (no)
EP (2) EP1782428B1 (no)
CN (2) CN101023527A (no)
AT (1) ATE479189T1 (no)
DE (1) DE602005023177D1 (no)
NO (1) NO321280B1 (no)
WO (2) WO2006009461A1 (no)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100719346B1 (ko) * 2005-04-19 2007-05-17 삼성전자주식회사 저항 메모리 셀, 그 형성 방법 및 이를 이용한 저항 메모리배열
US20080135900A1 (en) * 2006-11-13 2008-06-12 Seiko Epson Corporation Method of forming organic ferroelectric film, method of manufacturing memory element, memory device, and electronic apparatus
JP5233650B2 (ja) * 2008-12-18 2013-07-10 ソニー株式会社 タンパク質固定化電極およびその製造方法ならびに機能素子およびその製造方法
GB2475561A (en) * 2009-11-24 2011-05-25 Nano Eprint Ltd Planar electronic devices
US9058934B2 (en) * 2009-12-23 2015-06-16 Agency For Science, Technology And Research Method of forming a VDF oligomer or co-oligomer film on a substrate and an electrical device comprising the VDF oligomer or co-oligomer film on the substrate
CN102339953B (zh) * 2010-07-16 2017-08-01 霍尼韦尔国际公司 能量收集装置
US9093867B2 (en) 2011-09-23 2015-07-28 Eaton Corporation Power system including an electret for a power bus
US8791831B2 (en) * 2011-09-23 2014-07-29 Eaton Corporation System including an indicator responsive to an electret for a power bus
CN103943777B (zh) * 2014-03-18 2016-09-28 复旦大学 一种可控温旋涂制备有机半导体/铁电复合阻变薄膜的方法
CN110073440B (zh) 2016-10-10 2022-04-29 塞姆隆有限责任公司 电容矩阵布置及其激励方法
DE102016012071A1 (de) 2016-10-10 2018-04-12 Kai-Uwe Demasius Matrix mit kapazitiver Steuerungsvorrichtung
CN112542683B (zh) * 2020-12-09 2022-02-25 北京航空航天大学 一种用于星载的低频信号发射天线
US11792996B2 (en) 2021-04-13 2023-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Bottom-electrode interface structure for memory

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2705407A1 (de) * 1970-09-28 1977-08-18 Technovation Verfahren zur herstellung eines ferro-elektrischen bauelementes und nach diesem verfahren hergestelltes bauelement
JPS49123132A (no) * 1973-03-30 1974-11-25
DE2935055A1 (de) * 1979-08-30 1981-03-12 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum entfernen von gold auf siliciumoberflaechen
EP0344108A3 (de) * 1988-05-27 1991-03-27 Ciba-Geigy Ag Elektroaktive ultradünne Schichten
US5146299A (en) * 1990-03-02 1992-09-08 Westinghouse Electric Corp. Ferroelectric thin film material, method of deposition, and devices using same
JPH1081951A (ja) * 1996-09-03 1998-03-31 Canon Inc 記録媒体とその製造方法、及び該記録媒体を用いた情報記録再生装置
NO304956B1 (no) 1997-07-22 1999-03-08 Opticom As Elektrodeanordning uten og med et funksjonselement, samt en elektrodeinnretning dannet av elektrodeanordninger med funksjonselement og anvendelser derav
NO309500B1 (no) 1997-08-15 2001-02-05 Thin Film Electronics Asa Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme
US6548843B2 (en) * 1998-11-12 2003-04-15 International Business Machines Corporation Ferroelectric storage read-write memory
US6395632B1 (en) * 2000-08-31 2002-05-28 Micron Technology, Inc. Etch stop in damascene interconnect structure and method of making
NO20015509D0 (no) 2001-11-09 2001-11-09 Hans Gude Gudesen Elektrodeanordning, fremgangsmåte til dets fremstilling, apparat omfattende elektrodeanordningene, samt bruk av sistnevnte
NO316632B1 (no) 2001-11-16 2004-03-15 Thin Film Electronics Asa Matriseadresserbart optoelektronisk apparat og elektrodeanordning i samme
NO20015735D0 (no) * 2001-11-23 2001-11-23 Thin Film Electronics Asa Barrierelag
US6878980B2 (en) * 2001-11-23 2005-04-12 Hans Gude Gudesen Ferroelectric or electret memory circuit
NO314373B1 (no) 2001-11-28 2003-03-10 Hans Gude Gudesen Matriseadresserbart apparat med en eller flere minneinnretninger
NO20016100D0 (no) * 2001-12-14 2001-12-14 Hans Gude Gudesen Piezo ikke-destruktiv utlesning
US7259039B2 (en) * 2003-07-09 2007-08-21 Spansion Llc Memory device and methods of using and making the device
US6955939B1 (en) * 2003-11-03 2005-10-18 Advanced Micro Devices, Inc. Memory element formation with photosensitive polymer dielectric
NO321555B1 (no) * 2004-03-26 2006-05-29 Thin Film Electronics Asa Organisk elektronisk innretning og fremgangsmate til fremstilling av en slik innretning
NO20041733L (no) * 2004-04-28 2005-10-31 Thin Film Electronics Asa Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling.
NO321381B1 (no) * 2004-07-22 2006-05-02 Thin Film Electronics Asa Elektrisk viaforbindelse og tilknyttet kontaktanordning samt fremgangsmate til deres fremstilling

Also Published As

Publication number Publication date
NO321280B1 (no) 2006-04-18
ATE479189T1 (de) 2010-09-15
EP1782428A1 (en) 2007-05-09
DE602005023177D1 (de) 2010-10-07
WO2006009462A1 (en) 2006-01-26
US20060046344A1 (en) 2006-03-02
US20060091435A1 (en) 2006-05-04
CN101023493A (zh) 2007-08-22
US7291859B2 (en) 2007-11-06
EP1782428B1 (en) 2010-08-25
CN101023493B (zh) 2010-06-16
US7482624B2 (en) 2009-01-27
CN101023527A (zh) 2007-08-22
EP1774591A4 (en) 2009-11-04
EP1782428A4 (en) 2009-11-18
EP1774591A1 (en) 2007-04-18
NO20043163D0 (no) 2004-07-22
WO2006009461A8 (en) 2006-04-20
WO2006009461A1 (en) 2006-01-26

Similar Documents

Publication Publication Date Title
EP1774591A4 (en) ORGANIC FERROELECTRIC OR ELECTRONIC ELEMENT WITH CONTACTING AND MANUFACTURING METHOD THEREFOR
DE60109325D1 (de) Ferroelektrische speicherschaltung und verfahren zu ihrer herstellung
TW200503183A (en) Planar polymer memory device
TW200627647A (en) Thin film transistor array panel and manufacturing method thereof
TW200701402A (en) Thin film plate phase change ram circuit and manufacturing method
TW200715537A (en) Non-volatile memory cell and integrated circuit
CN1284199A (zh) 可编程子表面集聚金属化结构及其制造方法
TW200636978A (en) Nonvolatile semiconductor memory device and method for producing the same
TW200608576A (en) Method for fabricating organic thin film transistor and method for fabricating liquid crystal display device using the same
TW200742089A (en) Electro-optical device, electronic apparatus, and method of manufacturing electro-optical device
TW200514464A (en) Electrooptical apparatus and its manufacturing method, and electronic apparatus
CA2449632A1 (en) Method of fabrication of electronic devices using microfluidic channels
EP1701387A3 (en) Organic thin film transistor array panel and manufacturing method thereof
TW200641492A (en) Electro-optical device, method of manufacturing the same, and electronic apparatus
EP1722418A3 (en) Semiconductor memory device
TW200732805A (en) Electro-optic device, method for fabricating the same, and electronic apparatus
TW200703621A (en) Resistive memory device with improved data retention and reduced power
EP1308959A3 (en) Ferroelectric semiconductor memory
WO2005106890A8 (en) An organic electronic circuit with functional interlayer and method for making the same
TW200711145A (en) Organic thin film transistor array panel and method for manufacturing the same
EP2237315A3 (en) Memory arrays, semiconductor constructions and electronic systems; and method of forming memory arrays, semiconductor constructions and electronic systems
TW200943547A (en) Solution processed electronic devices
TW200628913A (en) Thin-film semiconductor device, electro-optical device, and electronic apparatus
TW200511561A (en) Dual poly layer and method of manufacture thereof
TW200639794A (en) Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus