NO20024550L - FremgangsmÕte og anordning for overföring av spinnpolariserte ladningsbirere - Google Patents

FremgangsmÕte og anordning for overföring av spinnpolariserte ladningsbirere

Info

Publication number
NO20024550L
NO20024550L NO20024550A NO20024550A NO20024550L NO 20024550 L NO20024550 L NO 20024550L NO 20024550 A NO20024550 A NO 20024550A NO 20024550 A NO20024550 A NO 20024550A NO 20024550 L NO20024550 L NO 20024550L
Authority
NO
Norway
Prior art keywords
charge carriers
spin
polarized charge
polarized
transport
Prior art date
Application number
NO20024550A
Other languages
English (en)
Norwegian (no)
Other versions
NO20024550D0 (no
Inventor
Valentin Dediu
Carlo Taliani
Original Assignee
Consiglio Nazionale Ricerche
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consiglio Nazionale Ricerche filed Critical Consiglio Nazionale Ricerche
Publication of NO20024550D0 publication Critical patent/NO20024550D0/no
Publication of NO20024550L publication Critical patent/NO20024550L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06C—FINISHING, DRESSING, TENTERING OR STRETCHING TEXTILE FABRICS
    • D06C5/00—Shaping or stretching of tubular fabrics upon cores or internal frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Textile Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Radio Relay Systems (AREA)
  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
NO20024550A 2000-03-22 2002-09-23 FremgangsmÕte og anordning for overföring av spinnpolariserte ladningsbirere NO20024550L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT2000MI000603A IT1316829B1 (it) 2000-03-22 2000-03-22 Procedimento e dispositivo per il trasferimento di portatori di carica con spin polarizzato
PCT/EP2000/006909 WO2001071824A1 (en) 2000-03-22 2000-07-19 Method and device for transferring spin-polarized charge carriers

Publications (2)

Publication Number Publication Date
NO20024550D0 NO20024550D0 (no) 2002-09-23
NO20024550L true NO20024550L (no) 2002-11-14

Family

ID=11444589

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20024550A NO20024550L (no) 2000-03-22 2002-09-23 FremgangsmÕte og anordning for overföring av spinnpolariserte ladningsbirere

Country Status (14)

Country Link
US (1) US6325914B1 (de)
EP (1) EP1266412B1 (de)
JP (1) JP2003528473A (de)
KR (1) KR20030065305A (de)
CN (1) CN1451181B (de)
AT (1) ATE354180T1 (de)
AU (1) AU2000266960A1 (de)
CA (1) CA2402850A1 (de)
CZ (1) CZ20023169A3 (de)
DE (1) DE60033441T2 (de)
IT (1) IT1316829B1 (de)
NO (1) NO20024550L (de)
RU (1) RU2002125450A (de)
WO (1) WO2001071824A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6642538B2 (en) * 2001-10-24 2003-11-04 The United States Of America As Represented By The Secretary Of The Navy Voltage controlled nonlinear spin filter based on paramagnetic ion doped nanocrystal
US7248446B2 (en) * 2001-11-27 2007-07-24 Seagate Technology Llc Magnetoresistive element using an organic nonmagnetic layer
EP1471828A1 (de) * 2002-01-18 2004-11-03 California Institute Of Technology Verfahren und gerät für die nanomagnetische manipulation und messung
US20040054342A1 (en) * 2002-09-18 2004-03-18 Newbill Vincent B. Absorbent articles having a superabsorbent retention web
US6888660B2 (en) * 2003-03-24 2005-05-03 The United States Of America As Represented By The Secretary Of The Navy Magnetic organic light emitting device and method for modulating electroluminescence intensity
US20070082230A1 (en) * 2003-05-22 2007-04-12 Jing Shi Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes
JP2005150156A (ja) * 2003-11-11 2005-06-09 Toshiba Corp 磁気記憶装置
US7105864B2 (en) * 2004-01-29 2006-09-12 Micron Technology, Inc. Non-volatile zero field splitting resonance memory
US20060042685A1 (en) * 2004-08-25 2006-03-02 Ying Wang Electronic devices having a charge transport layer that has defined triplet energy level
JP2007080925A (ja) * 2005-09-12 2007-03-29 Ricoh Co Ltd 磁気抵抗素子、磁気センサ及びメモリ
JP4967503B2 (ja) * 2006-07-28 2012-07-04 ソニー株式会社 有機薄膜トランジスタ、有機薄膜トランジスタの形成方法
WO2008084559A1 (en) * 2007-01-11 2008-07-17 Toyota Jidosha Kabushiki Kaisha Quantum motor
DE102007037859A1 (de) * 2007-08-10 2009-02-12 Siemens Ag Anordnung mit magnetoresistivem Effekt und Verfahren zur Herstellung dazu
FR2921494B1 (fr) * 2007-09-20 2009-12-18 Saint Louis Inst Dispositif de mesure de l'induction magnetique comportant plusieurs bandes de film mince presentant des phenomenes de magnetoresistance colossale
CN102217025A (zh) * 2008-10-17 2011-10-12 盛敏赛思有限责任公司 透明的偏振光发射器件
US8637331B2 (en) 2008-10-17 2014-01-28 Bloominescence, Llc Transparent polarized light-emitting device
CN103765182A (zh) * 2011-08-18 2014-04-30 西门子公司 用于测定转矩的装置以及所属的测量方法
CN105801915B (zh) * 2014-12-31 2018-08-03 埃肯有机硅（上海）有限公司 单氨烷基封端聚硅氧烷改性的碳纳米管及其制备方法
CN104931900B (zh) * 2015-06-15 2017-12-29 中国科学院空间科学与应用研究中心 一种基于异常磁阻效应的高灵敏度矢量磁场传感器
CN108264349B (zh) * 2018-02-10 2021-07-06 浩发环保科技（深圳）有限公司 具有导电功能的镧锶锰氧陶瓷薄膜及其制备方法、液流电池钛基镧锶锰氧陶瓷电极

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4224525A (en) * 1978-11-06 1980-09-23 Westinghouse Electric Corp. Apparatus for producing stereo-regular polymers
FR2607623B1 (fr) * 1986-11-27 1995-02-17 Commissariat Energie Atomique Source d'electrons polarises de spin, utilisant une cathode emissive a micropointes, application en physique des interactions electrons-matiere ou electrons-particules, physique des plasmas, microscopie electronique
US5043693A (en) * 1990-08-13 1991-08-27 The United States Of America As Represented By The Secretary Of The Navy Heterogeneous magnetoresistive layer
JPH0923256A (ja) * 1995-07-07 1997-01-21 Oki Electric Ind Co Ltd 電話機構造
JPH1098220A (ja) * 1996-09-20 1998-04-14 Sanyo Electric Co Ltd 磁気抵抗効果素子
JPH10206513A (ja) * 1997-01-21 1998-08-07 Toyota Central Res & Dev Lab Inc 強磁性スピントンネル効果素子

Also Published As

Publication number Publication date
JP2003528473A (ja) 2003-09-24
EP1266412A1 (de) 2002-12-18
ATE354180T1 (de) 2007-03-15
CN1451181B (zh) 2010-04-28
US6325914B1 (en) 2001-12-04
EP1266412B1 (de) 2007-02-14
DE60033441T2 (de) 2007-11-15
CZ20023169A3 (cs) 2003-02-12
DE60033441D1 (de) 2007-03-29
CN1451181A (zh) 2003-10-22
NO20024550D0 (no) 2002-09-23
CA2402850A1 (en) 2001-09-27
IT1316829B1 (it) 2003-05-12
ITMI20000603A0 (it) 2000-03-22
AU2000266960A1 (en) 2001-10-03
WO2001071824A1 (en) 2001-09-27
RU2002125450A (ru) 2004-03-27
ITMI20000603A1 (it) 2001-09-22
KR20030065305A (ko) 2003-08-06

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