NO20021466D0 - Volumetrisk datalagringsapparat - Google Patents

Volumetrisk datalagringsapparat

Info

Publication number
NO20021466D0
NO20021466D0 NO20021466A NO20021466A NO20021466D0 NO 20021466 D0 NO20021466 D0 NO 20021466D0 NO 20021466 A NO20021466 A NO 20021466A NO 20021466 A NO20021466 A NO 20021466A NO 20021466 D0 NO20021466 D0 NO 20021466D0
Authority
NO
Norway
Prior art keywords
memory devices
data storage
volumetric data
memory
electrode means
Prior art date
Application number
NO20021466A
Other languages
English (en)
Other versions
NO20021466L (no
NO316637B1 (no
Inventor
Geirr I Leistad
Hans Gude Gudesen
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20021466A priority Critical patent/NO316637B1/no
Publication of NO20021466D0 publication Critical patent/NO20021466D0/no
Priority to AT03745040T priority patent/ATE301327T1/de
Priority to EP03745040A priority patent/EP1488427B1/en
Priority to CA002480307A priority patent/CA2480307A1/en
Priority to PCT/NO2003/000097 priority patent/WO2003081602A1/en
Priority to ES03745040T priority patent/ES2247552T3/es
Priority to DE60301208T priority patent/DE60301208T2/de
Priority to CNA038066157A priority patent/CN1643616A/zh
Priority to RU2004126964/09A priority patent/RU2275699C2/ru
Priority to JP2003579230A priority patent/JP2005521255A/ja
Priority to KR10-2004-7015141A priority patent/KR20040111435A/ko
Priority to DK03745040T priority patent/DK1488427T3/da
Priority to AU2003215967A priority patent/AU2003215967A1/en
Priority to US10/395,245 priority patent/US6952361B2/en
Publication of NO20021466L publication Critical patent/NO20021466L/no
Publication of NO316637B1 publication Critical patent/NO316637B1/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Refuse Collection And Transfer (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
  • Read Only Memory (AREA)
NO20021466A 2002-03-25 2002-03-25 Volumetrisk datalagringsapparat NO316637B1 (no)

Priority Applications (14)

Application Number Priority Date Filing Date Title
NO20021466A NO316637B1 (no) 2002-03-25 2002-03-25 Volumetrisk datalagringsapparat
AU2003215967A AU2003215967A1 (en) 2002-03-25 2003-03-21 A volumetric data storage apparatus comprising a plurality of stacked matrix-addressable memory devices
DE60301208T DE60301208T2 (de) 2002-03-25 2003-03-21 Volumetrische datenspeichervorrichtung mit mehreren gestapelten matrixadressierbaren speichereinrichtungen
RU2004126964/09A RU2275699C2 (ru) 2002-03-25 2003-03-21 Устройство объемного хранения данных, содержащее множество собранных в пакет запоминающих устройств с матричной адресацией
CA002480307A CA2480307A1 (en) 2002-03-25 2003-03-21 A volumetric data storage apparatus comprising a plurality of stacked matrix-addressable memory devices
PCT/NO2003/000097 WO2003081602A1 (en) 2002-03-25 2003-03-21 A volumetric data storage apparatus comprising a plurality of stacked matrix-addressable memory devices
ES03745040T ES2247552T3 (es) 2002-03-25 2003-03-21 Aparato para el almacenamiento volumetrico de datos que comprende una serie de dispositivo de memoria apilados direccionables en forma de matriz.
AT03745040T ATE301327T1 (de) 2002-03-25 2003-03-21 Volumetrische datenspeichervorrichtung mit mehreren gestapelten matrixadressierbaren speichereinrichtungen
CNA038066157A CN1643616A (zh) 2002-03-25 2003-03-21 包括多个堆叠的矩阵可寻址存储器件的立体数据存储装置
EP03745040A EP1488427B1 (en) 2002-03-25 2003-03-21 A volumetric data storage apparatus comprising a plurality of stacked matrix-addressable memory devices
JP2003579230A JP2005521255A (ja) 2002-03-25 2003-03-21 複数のスタック化マトリクス・アドレス可能メモリ・デバイスを備える容積データ記憶装置
KR10-2004-7015141A KR20040111435A (ko) 2002-03-25 2003-03-21 다수의 적층된 매트릭스-어드레스 가능한 메모리디바이스들을 포함하는 용적형 데이타 저장장치
DK03745040T DK1488427T3 (da) 2002-03-25 2003-03-21 Volumetrisk datalagringsapparat omfattende en flerhed af stablede matrixadresserbare hukommelsesindretninger
US10/395,245 US6952361B2 (en) 2002-03-25 2003-03-25 Volumetric data storage apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20021466A NO316637B1 (no) 2002-03-25 2002-03-25 Volumetrisk datalagringsapparat

Publications (3)

Publication Number Publication Date
NO20021466D0 true NO20021466D0 (no) 2002-03-25
NO20021466L NO20021466L (no) 2003-09-26
NO316637B1 NO316637B1 (no) 2004-03-15

Family

ID=19913461

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20021466A NO316637B1 (no) 2002-03-25 2002-03-25 Volumetrisk datalagringsapparat

Country Status (14)

Country Link
US (1) US6952361B2 (no)
EP (1) EP1488427B1 (no)
JP (1) JP2005521255A (no)
KR (1) KR20040111435A (no)
CN (1) CN1643616A (no)
AT (1) ATE301327T1 (no)
AU (1) AU2003215967A1 (no)
CA (1) CA2480307A1 (no)
DE (1) DE60301208T2 (no)
DK (1) DK1488427T3 (no)
ES (1) ES2247552T3 (no)
NO (1) NO316637B1 (no)
RU (1) RU2275699C2 (no)
WO (1) WO2003081602A1 (no)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
NO20052128L (no) * 2005-04-29 2006-10-30 Thin Film Electronics Asa Minneinnretning og fremgangsmater for drift av denne
KR101547328B1 (ko) 2009-09-25 2015-08-25 삼성전자주식회사 강유전체 메모리 소자 및 그 동작 방법
RU2625023C2 (ru) * 2015-11-12 2017-07-11 Дмитриенко Владимир Григорьевич Способ обмена данными с ячейками памяти или иных устройств и их адресации
CN109378313B (zh) * 2018-09-23 2020-10-30 复旦大学 一种低功耗三维非易失性存储器及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO20005980L (no) * 2000-11-27 2002-05-28 Thin Film Electronics Ab Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling
US6858862B2 (en) * 2001-06-29 2005-02-22 Intel Corporation Discrete polymer memory array and method of making same
US6775173B2 (en) * 2001-11-28 2004-08-10 Hans Gude Gudesen Matrix-addressable apparatus with one or more memory devices

Also Published As

Publication number Publication date
ATE301327T1 (de) 2005-08-15
EP1488427B1 (en) 2005-08-03
ES2247552T3 (es) 2006-03-01
DE60301208D1 (de) 2005-09-08
DE60301208T2 (de) 2006-04-13
DK1488427T3 (da) 2005-11-28
CN1643616A (zh) 2005-07-20
US6952361B2 (en) 2005-10-04
WO2003081602A1 (en) 2003-10-02
CA2480307A1 (en) 2003-10-02
AU2003215967A1 (en) 2003-10-08
US20040004887A1 (en) 2004-01-08
EP1488427A1 (en) 2004-12-22
NO20021466L (no) 2003-09-26
NO316637B1 (no) 2004-03-15
KR20040111435A (ko) 2004-12-31
JP2005521255A (ja) 2005-07-14
RU2004126964A (ru) 2005-06-10
RU2275699C2 (ru) 2006-04-27

Similar Documents

Publication Publication Date Title
ATE372551T1 (de) Speichersystem mit speichermodulen und mehrerer speicherbänke
TWI257171B (en) Memory with charge storage locations
EP1359587A3 (en) Memory cell arrays
TW200623395A (en) Stacked semiconductor memory device
ATE443345T1 (de) Gestapelte 1t-n speicherzellenstruktur
TW200721177A (en) Semiconductor memory device
TW200721190A (en) Semiconductor device
TW345660B (en) Stabilization circuits and techniques for storage and retrieval of single or multiple digital bits per memory cell
TW200741732A (en) Memory cells and array thereof
TWI266326B (en) Nonvolatile semiconductor memory device having protection function for each memory block
TW200731286A (en) Electronic memory with binary storage elements
TW200742043A (en) Multiple port memory having a plurality of paraller connected trench capacitors in a cell
DE50000882D1 (de) Speicheranordnung mit adressverwürfelung
TW200501160A (en) Multi-level memory device and methods for programming and reading the same
EP1553601A3 (en) Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture
NO20021466L (no) Volumetrisk datalagringsapparat
EP1460639A3 (en) Memory device, refresh control circuit to be used for the memory device and refresh method
TW200636721A (en) Memory device with pre-fetch circuit and pre-fetch method
TW200605189A (en) Semiconductor memory devices having separate read and write global data lines and associated methods
TW200636737A (en) Three-dimensional memory devices and methods of manufacturing and operating the same
CA2373460A1 (en) Improved multilevel dram
TW200615948A (en) Redundancy circuits and memory devices having a twist bitline scheme and methods of repairing defective cells in the same
TW200620282A (en) DRAM array structure
KR960009150A (ko) 반도체 메모리소자
TW200623120A (en) Low voltage semiconductor memory device