NO20016041D0 - En matriseadresserbar gruppe av integrerte transistor/minnestrukturer - Google Patents

En matriseadresserbar gruppe av integrerte transistor/minnestrukturer

Info

Publication number
NO20016041D0
NO20016041D0 NO20016041A NO20016041A NO20016041D0 NO 20016041 D0 NO20016041 D0 NO 20016041D0 NO 20016041 A NO20016041 A NO 20016041A NO 20016041 A NO20016041 A NO 20016041A NO 20016041 D0 NO20016041 D0 NO 20016041D0
Authority
NO
Norway
Prior art keywords
electrode
electrodes
source
recess
transistor
Prior art date
Application number
NO20016041A
Other languages
English (en)
Other versions
NO314736B1 (no
NO20016041A (no
Inventor
Hans Gude Gudesen
Original Assignee
Hans Gude Gudesen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hans Gude Gudesen filed Critical Hans Gude Gudesen
Priority to NO20016041A priority Critical patent/NO20016041A/no
Publication of NO20016041D0 publication Critical patent/NO20016041D0/no
Priority to PCT/NO2002/000426 priority patent/WO2003050814A1/en
Priority to CNA028245377A priority patent/CN1602531A/zh
Priority to EP02804659A priority patent/EP1451825B1/en
Priority to AU2002366675A priority patent/AU2002366675A1/en
Priority to DE60218887T priority patent/DE60218887D1/de
Priority to RU2004120776/28A priority patent/RU2287205C2/ru
Priority to KR1020047008856A priority patent/KR100556089B1/ko
Priority to AT02804659T priority patent/ATE357045T1/de
Priority to CA002466153A priority patent/CA2466153C/en
Priority to JP2003551784A priority patent/JP2005512338A/ja
Priority to US10/300,802 priority patent/US6724028B2/en
Publication of NO314736B1 publication Critical patent/NO314736B1/no
Publication of NO20016041A publication Critical patent/NO20016041A/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
NO20016041A 2001-12-10 2001-12-10 Matriseadresserbar gruppe av integrerte transistor/minnestrukturer NO20016041A (no)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NO20016041A NO20016041A (no) 2001-12-10 2001-12-10 Matriseadresserbar gruppe av integrerte transistor/minnestrukturer
JP2003551784A JP2005512338A (ja) 2001-12-10 2002-11-18 集積トランジスタ／メモリ構造体のマトリックスアドレス指定可能なアレイ
RU2004120776/28A RU2287205C2 (ru) 2001-12-10 2002-11-18 Интегрированные транзисторно-запоминающие структуры и массив подобных структур с матричной адресацией
CNA028245377A CN1602531A (zh) 2001-12-10 2002-11-18 集成晶体管/存储器结构的矩阵可寻址阵列
EP02804659A EP1451825B1 (en) 2001-12-10 2002-11-18 A matrix-addressable array of integrated transistor/memory structures
AU2002366675A AU2002366675A1 (en) 2001-12-10 2002-11-18 A matrix-addressable array of integrated transistor/memory structures
DE60218887T DE60218887D1 (de) 2001-12-10 2002-11-18 Matrixadressierbares array integrierter transistor-/speicherstrukturen
PCT/NO2002/000426 WO2003050814A1 (en) 2001-12-10 2002-11-18 A matrix-addressable array of integrated transistor/memory structures
KR1020047008856A KR100556089B1 (ko) 2001-12-10 2002-11-18 집적 트랜지스터/메모리 구조의 매트릭스-어드레스가능어레이
AT02804659T ATE357045T1 (de) 2001-12-10 2002-11-18 Matrixadressierbares array integrierter transistor-/speicherstrukturen
CA002466153A CA2466153C (en) 2001-12-10 2002-11-18 Integrated transistor/memory structures and a matrix-addressable array thereof
US10/300,802 US6724028B2 (en) 2001-12-10 2002-11-21 Matrix-addressable array of integrated transistor/memory structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20016041A NO20016041A (no) 2001-12-10 2001-12-10 Matriseadresserbar gruppe av integrerte transistor/minnestrukturer

Publications (3)

Publication Number Publication Date
NO20016041D0 true NO20016041D0 (no) 2001-12-10
NO314736B1 NO314736B1 (no) 2003-05-12
NO20016041A NO20016041A (no) 2003-05-12

Family

ID=19913138

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20016041A NO20016041A (no) 2001-12-10 2001-12-10 Matriseadresserbar gruppe av integrerte transistor/minnestrukturer

Country Status (11)

Country Link
EP (1) EP1451825B1 (no)
JP (1) JP2005512338A (no)
KR (1) KR100556089B1 (no)
CN (1) CN1602531A (no)
AT (1) ATE357045T1 (no)
AU (1) AU2002366675A1 (no)
CA (1) CA2466153C (no)
DE (1) DE60218887D1 (no)
NO (1) NO20016041A (no)
RU (1) RU2287205C2 (no)
WO (1) WO2003050814A1 (no)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8120082B2 (en) 2005-09-12 2012-02-21 University of Seoul, Foundation of Industry-Academic Cooperation Ferroelectric memory device and method for manufacturing the same
KR100988227B1 (ko) * 2005-09-12 2010-10-18 서울시립대학교 산학협력단 강유전체 메모리장치 및 그 제조방법
KR101245293B1 (ko) * 2006-01-19 2013-03-19 서울시립대학교 산학협력단 강유전체 메모리의 제조를 위한 강유전 물질
CN112908368B (zh) * 2021-02-04 2023-03-21 清华大学 基于单片三维异质集成的三态内容寻址存储器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4952031A (en) * 1987-06-19 1990-08-28 Victor Company Of Japan, Ltd. Liquid crystal display device
JPH07106450A (ja) * 1993-10-08 1995-04-21 Olympus Optical Co Ltd 強誘電体ゲートトランジスタメモリ
DE69739045D1 (de) * 1997-08-27 2008-11-27 St Microelectronics Srl Herstellungsverfahren für elektronische Speicherbauelemente mit virtueller Masse
US6072716A (en) * 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same
US6473388B1 (en) * 2000-08-31 2002-10-29 Hewlett Packard Company Ultra-high density information storage device based on modulated cathodoconductivity

Also Published As

Publication number Publication date
RU2004120776A (ru) 2005-09-20
CA2466153A1 (en) 2003-06-19
WO2003050814A1 (en) 2003-06-19
NO314736B1 (no) 2003-05-12
ATE357045T1 (de) 2007-04-15
RU2287205C2 (ru) 2006-11-10
KR100556089B1 (ko) 2006-03-03
CN1602531A (zh) 2005-03-30
NO20016041A (no) 2003-05-12
EP1451825B1 (en) 2007-03-14
CA2466153C (en) 2007-01-23
AU2002366675A1 (en) 2003-06-23
KR20040064733A (ko) 2004-07-19
EP1451825A1 (en) 2004-09-01
DE60218887D1 (de) 2007-04-26
JP2005512338A (ja) 2005-04-28

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