NO20005427D0 - En mikrokontroller med en enkelt minnemodul, som har en dataminne- og kodeminnesektor, og som støtter simultan lese- /skriveaksess til begge sektorer - Google Patents
En mikrokontroller med en enkelt minnemodul, som har en dataminne- og kodeminnesektor, og som støtter simultan lese- /skriveaksess til begge sektorerInfo
- Publication number
- NO20005427D0 NO20005427D0 NO20005427A NO20005427A NO20005427D0 NO 20005427 D0 NO20005427 D0 NO 20005427D0 NO 20005427 A NO20005427 A NO 20005427A NO 20005427 A NO20005427 A NO 20005427A NO 20005427 D0 NO20005427 D0 NO 20005427D0
- Authority
- NO
- Norway
- Prior art keywords
- memory
- sectors
- microcontroller
- write access
- supports simultaneous
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F15/00—Digital computers in general; Data processing equipment in general
- G06F15/76—Architectures of general purpose stored program computers
- G06F15/78—Architectures of general purpose stored program computers comprising a single central processing unit
- G06F15/7807—System on chip, i.e. computer system on a single chip; System in package, i.e. computer system on one or more chips in a single package
- G06F15/7814—Specially adapted for real time processing, e.g. comprising hardware timers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
- G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
- G06F9/30003—Arrangements for executing specific machine instructions
- G06F9/3004—Arrangements for executing specific machine instructions to perform operations on memory
- G06F9/30043—LOAD or STORE instructions; Clear instruction
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
- G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
- G06F9/30098—Register arrangements
- G06F9/30101—Special purpose registers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
- G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
- G06F9/30098—Register arrangements
- G06F9/3012—Organisation of register space, e.g. banked or distributed register file
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
- G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
- G06F9/30098—Register arrangements
- G06F9/3012—Organisation of register space, e.g. banked or distributed register file
- G06F9/30138—Extension of register space, e.g. register cache
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
- G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
- G06F9/32—Address formation of the next instruction, e.g. by incrementing the instruction counter
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F9/00—Arrangements for program control, e.g. control units
- G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
- G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
- G06F9/34—Addressing or accessing the instruction operand or the result ; Formation of operand address; Addressing modes
- G06F9/342—Extension of operand address space
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Software Systems (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- Read Only Memory (AREA)
- Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
- Memory System Of A Hierarchy Structure (AREA)
- Microcomputers (AREA)
- Executing Machine-Instructions (AREA)
- Storage Device Security (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/069,884 US6032248A (en) | 1998-04-29 | 1998-04-29 | Microcontroller including a single memory module having a data memory sector and a code memory sector and supporting simultaneous read/write access to both sectors |
PCT/US1999/004559 WO1999056205A1 (en) | 1998-04-29 | 1999-03-02 | A microcontroller including a single memory module having a data memory sector and a code memory sector and supporting simultaneous read/write access to both sectors |
Publications (3)
Publication Number | Publication Date |
---|---|
NO20005427D0 true NO20005427D0 (no) | 2000-10-27 |
NO20005427L NO20005427L (no) | 2000-10-27 |
NO326393B1 NO326393B1 (no) | 2008-11-24 |
Family
ID=22091805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20005427A NO326393B1 (no) | 1998-04-29 | 2000-10-27 | En mikrokontroller med en enkelt minnemodul, som har en dataminne- og kodeminnesektor, og som stotter simultan lese-/skriveaksess til begge sektorer |
Country Status (12)
Country | Link |
---|---|
US (1) | US6032248A (no) |
EP (1) | EP1131700B1 (no) |
JP (1) | JP2002513181A (no) |
KR (1) | KR100546449B1 (no) |
CN (1) | CN100357883C (no) |
CA (1) | CA2317765C (no) |
DE (1) | DE69938736D1 (no) |
HK (1) | HK1035044A1 (no) |
MY (1) | MY114633A (no) |
NO (1) | NO326393B1 (no) |
TW (1) | TW425556B (no) |
WO (1) | WO1999056205A1 (no) |
Families Citing this family (46)
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US6604001B2 (en) | 2001-03-19 | 2003-08-05 | Cardiac Pacemakers, Inc. | Implantable cardiac rhythm management device incorporating a programmable watchdog timer |
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FR2859813B1 (fr) * | 2003-09-15 | 2005-12-23 | Atmel Corp | Architecture eeprom et protocole de programmation |
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US7210002B2 (en) * | 2003-11-19 | 2007-04-24 | Qualcomm Incorporated | System and method for operating dual bank read-while-write flash |
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JP4989899B2 (ja) * | 2006-01-27 | 2012-08-01 | ルネサスエレクトロニクス株式会社 | 半導体演算処理装置 |
US9098179B2 (en) | 2006-04-17 | 2015-08-04 | Smart Technologies Ulc | Method and system for inserting a content object for use on an interactive surface |
US7594094B2 (en) | 2006-05-19 | 2009-09-22 | International Business Machines Corporation | Move data facility with optional specifications |
US7581074B2 (en) | 2006-05-19 | 2009-08-25 | International Business Machines Corporation | Facilitating use of storage access keys to access storage |
US8117614B2 (en) | 2006-05-19 | 2012-02-14 | International Business Machines Corporation | Extract CPU time facility |
US8301890B2 (en) * | 2006-08-10 | 2012-10-30 | Inside Secure | Software execution randomization |
US7613907B2 (en) * | 2006-08-11 | 2009-11-03 | Atmel Corporation | Embedded software camouflage against code reverse engineering |
US7984301B2 (en) * | 2006-08-17 | 2011-07-19 | Inside Contactless S.A. | Bi-processor architecture for secure systems |
US7554865B2 (en) * | 2006-09-21 | 2009-06-30 | Atmel Corporation | Randomizing current consumption in memory devices |
US7797516B2 (en) * | 2007-03-16 | 2010-09-14 | Atmel Corporation | Microcontroller with low-cost digital signal processing extensions |
US8370606B2 (en) | 2007-03-16 | 2013-02-05 | Atmel Corporation | Switching data pointers based on context |
JP4712769B2 (ja) * | 2007-07-09 | 2011-06-29 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
DE112008002845T5 (de) * | 2007-12-03 | 2010-11-18 | Robert Bosch Gmbh | System und Verfahren zur Sicherung von Prozessorspeicher während eines Stromausfall |
CN102262595B (zh) * | 2011-07-29 | 2014-04-02 | 航天恒星科技有限公司 | 一种微处理器扩展寻址方法 |
US9053784B2 (en) | 2012-04-12 | 2015-06-09 | Micron Technology, Inc. | Apparatuses and methods for providing set and reset voltages at the same time |
US8854236B2 (en) | 2012-05-18 | 2014-10-07 | Micron Technology, Inc. | Methods and apparatuses for low-power multi-level encoded signals |
EP2704001B1 (en) * | 2012-08-31 | 2016-10-19 | VIA Technologies, Inc. | Microprocessor that makes 64-bit general purpose registers available in MSR address space while operating in non-64-bit mode |
KR101989860B1 (ko) * | 2012-12-21 | 2019-06-17 | 에스케이하이닉스 주식회사 | 메모리 컨트롤러 및 이를 포함하는 메모리 시스템 |
US9036284B1 (en) * | 2013-09-16 | 2015-05-19 | Seagate Technology Llc | Isolated shingled bands of fractional tracks |
KR20160003530A (ko) * | 2014-07-01 | 2016-01-11 | 삼성전자주식회사 | 내장 저장 장치, 이와 통신 가능한 외장 저장 장치, 및 이를 포함하는 데이터 처리 시스템 |
CN107113719B (zh) * | 2014-10-08 | 2020-06-23 | 美国亚德诺半导体公司 | 可配置的预处理阵列器 |
US9922686B2 (en) | 2016-05-19 | 2018-03-20 | Micron Technology, Inc. | Apparatuses and methods for performing intra-module databus inversion operations |
US10366765B2 (en) | 2016-12-15 | 2019-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjustment circuit for partitioned memory block |
US10146719B2 (en) | 2017-03-24 | 2018-12-04 | Micron Technology, Inc. | Semiconductor layered device with data bus |
US10664432B2 (en) | 2018-05-23 | 2020-05-26 | Micron Technology, Inc. | Semiconductor layered device with data bus inversion |
US10964702B2 (en) | 2018-10-17 | 2021-03-30 | Micron Technology, Inc. | Semiconductor device with first-in-first-out circuit |
US10884663B2 (en) * | 2019-03-14 | 2021-01-05 | Western Digital Technologies, Inc. | Executable memory cells |
JP2022522437A (ja) | 2019-04-30 | 2022-04-19 | 長江存儲科技有限責任公司 | コントローラ、機器および方法 |
KR102242957B1 (ko) * | 2019-06-03 | 2021-04-21 | 주식회사 원세미콘 | 고속 낸드 메모리 시스템과 고속 낸드 메모리 패키지 디바이스 |
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-
1998
- 1998-04-29 US US09/069,884 patent/US6032248A/en not_active Expired - Lifetime
-
1999
- 1999-03-02 KR KR1020007008790A patent/KR100546449B1/ko not_active IP Right Cessation
- 1999-03-02 CN CNB998055190A patent/CN100357883C/zh not_active Expired - Fee Related
- 1999-03-02 EP EP99909749A patent/EP1131700B1/en not_active Expired - Lifetime
- 1999-03-02 JP JP2000546301A patent/JP2002513181A/ja active Pending
- 1999-03-02 DE DE69938736T patent/DE69938736D1/de not_active Expired - Fee Related
- 1999-03-02 CA CA002317765A patent/CA2317765C/en not_active Expired - Fee Related
- 1999-03-02 WO PCT/US1999/004559 patent/WO1999056205A1/en active Search and Examination
- 1999-04-01 TW TW088105183A patent/TW425556B/zh not_active IP Right Cessation
- 1999-04-02 MY MYPI99001260A patent/MY114633A/en unknown
-
2000
- 2000-10-27 NO NO20005427A patent/NO326393B1/no not_active IP Right Cessation
-
2001
- 2001-08-09 HK HK01105530A patent/HK1035044A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
MY114633A (en) | 2002-11-30 |
CA2317765A1 (en) | 1999-11-04 |
JP2002513181A (ja) | 2002-05-08 |
TW425556B (en) | 2001-03-11 |
US6032248A (en) | 2000-02-29 |
KR20010052162A (ko) | 2001-06-25 |
EP1131700B1 (en) | 2008-05-14 |
NO20005427L (no) | 2000-10-27 |
WO1999056205A1 (en) | 1999-11-04 |
DE69938736D1 (de) | 2008-06-26 |
NO326393B1 (no) | 2008-11-24 |
KR100546449B1 (ko) | 2006-01-26 |
EP1131700A1 (en) | 2001-09-12 |
CN100357883C (zh) | 2007-12-26 |
CN1298501A (zh) | 2001-06-06 |
HK1035044A1 (en) | 2001-11-09 |
EP1131700A4 (en) | 2006-05-24 |
CA2317765C (en) | 2005-08-16 |
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